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Abstract: No abstract text available
Text: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60V, 195A, 3.1mΩ Features Description • RDS on = 2.67mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored
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FDP039N08B
Abstract: fdp039 547 MOSFET
Text: FDP039N08B_F102 N-Channel PowerTrench MOSFET 80V, 171A, 3.9mW Features Description • RDS on = 3.16mW ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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fdb075n15a
Abstract: No abstract text available
Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has
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FDP075N15A
F102/FDB075N15A
FDB075N15A
FDB075N15A
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547 MOSFET
Abstract: No abstract text available
Text: FDP039N08B_F102 N-Channel PowerTrench MOSFET 80 V, 171 A, 3.9 mΩ Features Description • RDS on = 3.16 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low Reverse Recovery Charge, Qrr = 87.9 nC This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has
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FDP027N08
Abstract: FDP027N08B 200A battery charger
Text: FDP027N08B_F102 N-Channel PowerTrench MOSFET 80V, 223A, 2.7mΩ Features Description • RDS on = 2.21mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDP053N08B
Abstract: No abstract text available
Text: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80V, 120A, 5.3mW Features Description • RDS on = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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fdp053
Abstract: FDP053N08B 4480 Mosfet
Text: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80 V, 120 A, 5.3 mΩ Features Description • RDS on = 4.2 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Low Reverse Recovery Charge, Qrr = 62.5 nC This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has
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Diode Marking C3
Abstract: FDP027N08B_F102
Text: FDP027N08B_F102 N-Channel PowerTrench MOSFET 80 V, 223 A, 2.7 mΩ Features Description • RDS on = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild ® ® Semiconductor ’s advanced PowerTrench process that has
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F102 equivalent
Abstract: No abstract text available
Text: FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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FDP083N15A
FDP083N15A
F102 equivalent
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8245 diode
Abstract: FDP032N08B
Text: FDP032N08B_F102 N-Channel PowerTrench MOSFET 80V, 211A, 3.3mΩ Features Description • RDS on = 2.85mΩ (Typ.)@ VGS = 10V, ID = 50A • Low reverse recovery charge, Qrr This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has
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FDP030N06B
Abstract: No abstract text available
Text: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60 V, 195 A, 3.1 mΩ Features Description • RDS on = 2.67 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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FDB075N15A
Abstract: No abstract text available
Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been
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FDP075N15A
F102/FDB075N15A
FDB075N15A
FDB075N15A
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Untitled
Abstract: No abstract text available
Text: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mΩ Features Description • RDS on = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDP083N15A
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ISD 100
Abstract: FDP075N15A
Text: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been
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FDP075N15A
F102/FDB075N15A
FDB075N15A
ISD 100
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1FK7060-5AF71-1
Abstract: 1FK7103-5AF71 1FK7063-5AF71 1FK7042-5AF71 1FK7105-5AF71-1 1FK7022-5AK71 siemens servo motor 1fk7060 1FK7083-5AF71 1FK7032-5AK71 1FK7063-5AF71-1
Text: Configuration Manual 12/2006 Edition 1FK7 Synchronous Motors SINAMICS S120 sinamics s Foreword Motor Description 1 SINAMICS S120 Application 2 Synchronous Motors 1FK7 Mechanical data 3 Electrical data 4 Configuration 5 Motor components 6 Technical data and
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6SN1197-0AD16-0BP1
1FK7061-7AH71,
1FK7063-5AF71,
1FK7063-5AH71,
1FK7064-7AF71,
1FK7064-7AH71,
1FK7080-5AF71,
1FK7080-5AH71,
1FK7083-5AF71,
1FK7060-5AF71-1
1FK7103-5AF71
1FK7063-5AF71
1FK7042-5AF71
1FK7105-5AF71-1
1FK7022-5AK71
siemens servo motor 1fk7060
1FK7083-5AF71
1FK7032-5AK71
1FK7063-5AF71-1
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FDP020N06
Abstract: micro solar inverters Mosfet application note fairchild FDP020N06B 48V kW battery charger
Text: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored
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Untitled
Abstract: No abstract text available
Text: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored
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WP91147L8BSR
Abstract: FLUKE 8060A Fluke 8060A service manual Fluke 8060A Multimeter calibration manual SHARP KS F102 TAG C7 Thyristor TRIACS EQUIVALENT LIST FLUKE 8060a manual FLUKE Clamp meter diagram J87132B-2
Text: Product Manual J87132B-2 Select Code 169-792-100 Comcode 107940108 Issue 3 March 1998 Lucent Technologies 140-Volt, 140-Ampere, 60-Hertz Ferroresonant Rectifier Notice: Every effort was made to ensure that the information in this document was complete and accurate at the time of printing.
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J87132B-2
140-Volt,
140-Ampere,
60-Hertz
40V/140A
WP91147L8BSR
FLUKE 8060A
Fluke 8060A service manual
Fluke 8060A Multimeter calibration manual
SHARP KS F102
TAG C7 Thyristor
TRIACS EQUIVALENT LIST
FLUKE 8060a manual
FLUKE Clamp meter diagram
J87132B-2
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Untitled
Abstract: No abstract text available
Text: • International H Rectifier 4655452 DGlt.755 ‘m INTERNATIONAL RECTIFIER *INR b5E » SERIES IRK.F102 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features F a st tu rn -o ff th yristo r F a s t re c o v e ry d io d e H igh s u rg e c a p a b ility
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diode D284
Abstract: AV1X
Text: International BRectifier s e r ie s i r k .f i <?2 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically Isolated baseplate 3000 V RMS isolating voltage Industrial standard package
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PDS-900A
Abstract: f102b h2e diode
Text: B U R R — BROUN CORP 25E D • 173 13b5 DDlhhES ^ ■ " T ^ S d 'O l REF102 Precision VOLTAGE REFERENCE FEATURES APPLICATIONS • +10.00V + 0.0025V OUTPUT • VERY LOW DRIFT: 2.5ppm/°C max • EXCELLENT STABILITY: 5ppm/1000hrstyp • EXCELLENT LINE REGULATION:
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REF102
5ppm/1000hrstyp
10ppm/mA
36VDC
REF102
17313L
EF102s
EF102s.
EF102.
PDS-900A
f102b
h2e diode
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constant current power supply circuit diagram
Abstract: transformer less power supply 12 volt 3A lls-8040 Remote Controlled Fan Regulator application IM-LLS-8000 Regulated Power Supply Schematic Diagram Lambda power supply LLS-8018 LLS-8060 lambda power supply LLS-8120
Text: INSTRUCTION MANUAL FOR LLS-8000 POWER SUPPLY SERIES LAMBDAEUCTBONICSINCA Rev B IM-LLS-8000 IN STRUCTIO N M ANUAL FO E REG U LA T ED PO W ER SU PPLIES LLS-8000 SE R IE S This manual provides instructions intended fo r the operation of the Lambda power supplies, and
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LLS-8000
LLS-8000
IM-LLS-8000
IC50I
IC507
constant current power supply circuit diagram
transformer less power supply 12 volt 3A
lls-8040
Remote Controlled Fan Regulator application
IM-LLS-8000
Regulated Power Supply Schematic Diagram
Lambda power supply LLS-8018
LLS-8060
lambda power supply
LLS-8120
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Lambda power supply LLS-8018
Abstract: lls-8040 Lambda power supply LLS-8008 constant current power supply circuit diagram IC206 LLS-8060 IC601 LRA-15 Rack Adapter AC ammeter diagram constant current 2 terminal source
Text: IN STRU C TIO N M A N U A L FO R R E G U L A T ED PO W ER S U P P L IE S LLS-8000 S E R IE S This manual provides instructions intended for the operation of the Lambda power supplies, and is not to be reproduced without the w ritten consent of Lambda Electronics. AD inform ation
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LLS-8000
IM-LLS-8000
MODELS-8008
Lambda power supply LLS-8018
lls-8040
Lambda power supply LLS-8008
constant current power supply circuit diagram
IC206
LLS-8060
IC601
LRA-15 Rack Adapter
AC ammeter diagram
constant current 2 terminal source
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SOUND PROCESSOR ICS M62431FP 7-ELEMENT GRAPHIC EQUALIZER WITH MICROCOMPUTER INTERFACE DESCRIPTION The M62431FP is 2-channel 7-band graphic equalizer IC developed for home audio, car audio sets, etc. This IC can be control by serial data from microcomputer.
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M62431FP
M62431FP
HPF400Hz,
LPF30kHz>
56P6N-A
400Hz)
3900pF
12jiF
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