IRK E78996 701819-303ac
Abstract: I27900
Text: Bulletin I27131 rev. F 02/02 IRK.41, .56 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved
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I27131
E78996
3500VRMS
O-240AA
Al203
IRK E78996 701819-303ac
I27900
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AM B8 202
Abstract: 24A12
Text: Technical Data Glenair Series ITS and ITS-RG MIL-DTL-5015 Type Reverse Bayonet Connectors Contact Arrangements Front View of Pin Insert 1 CONTACT Arrangement Contact Size Service rating 16-2 12 E 16-12 4 A A Arrangement Contact Size Service rating 18-7 8 B
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MIL-DTL-5015
24-A1
28-B1
32-A1
36-B90
10SL-4
14S-9
16S-4
24-A12
AM B8 202
24A12
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BAY41
Abstract: BAY43 Q60201-Y bay 42
Text: BAY 41, BAY 42, BAY 43 Silicon planar sw itching diodes Silicon planar diodes BAY 41, BAY 42 and BAY 43 are suitable for high-speed, medium-current switching applications. They are supplied in glass-cases 51 A 2 DIN 41880 D O -7 . The cathode is identified by a colour ring.
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201-Y
Q60201-Y42
Q60201-Y43
BAY41
BAY43
Q60201-Y
bay 42
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HERA86G
Abstract: No abstract text available
Text: INDEX 1 N 3 4 A . .95 1 N 5 5 B . . 9 5 1 N 6 0 . . 95 1 N 8 7 . . 9 5 1 N 9 8 A . . 9 5 1 N 1 0 Q . .95 1 N 1 3 7 B . .9 5 1 N138B. .95 1 N 2 0 0 . . 9 5 1 N 2 0 1 . .95 1 N 2 0 2 . .95 1 N 2 0 3 . .95
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N138B.
ZM4740A
ZM4741
ZM4742A
ZM4743A
ZM4744A
ZM4745A
ZM4746A
ZM4747A
ZM4748A
HERA86G
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BAY41
Abstract: tu 104 BAY42 BAY43
Text: BAY 41 BAY 42 BAY 43 S iliziu m -P lan ar-S ch aitd io d en Die Silizium-Planar-Dioden B A Y 41, B A Y 42 und B A Y 43 im Glasgehäuse 51 A2 DIN 41 880 D O -7 , eignen sich zum Einsatz als schnelle Schaltdioden bei mittleren Strömen. Die Kathode ist durch einen Farbring gekennzeichnet.
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BAY41,
BAY42
BAY43
BAY41
Q60201-Y41
Q60201-Y42
Q60201-Y43
tu 104
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NTC 20D-20
Abstract: 7400P s427400 IC TTL 7400 input leakage current 6400P/P1L-6400/6460/6480P
Text: TMS41 6400, TMS41 6400P, TMS41 7400, TMS41 7400P T M S 426400, TMS426400P, T M S 427400 , T M S 4 2 7 4 0 0 P 41 9 4 3 0 4 -W Q R D B Y 4-BIT H IG H -S P E E D D R A M S SMKS881B - MAY 1995 - REVISED AUGUST 1995 Electrical characteristics for T M S 416400/P and
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TMS41
6400P,
7400P
TMS426400P,
SMKS881B
416400/P
S417400/P
NTC 20D-20
s427400
IC TTL 7400 input leakage current
6400P/P1L-6400/6460/6480P
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Untitled
Abstract: No abstract text available
Text: HA12203NT/HA12204NT Audio Signal Processor for Cassette Deck Dolby B-type NR with Recording System HITACHI ADE-207-222B (Z) Target Specification 3rd Edition Jun. 1999 Description HA12203NT is silicon monolithic bipolar IC providing Dolby noise reduction system*1, music sensor
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HA12203NT/HA12204NT
ADE-207-222B
HA12203NT
HA12204NT
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diode D214
Abstract: ZX-08
Text: 4ÔSSMS2 QQlbb72 Q'ìS International ¡i»r 1Rectifier INR s e r ie s irk .26, .41, .56, .71, .91 ADD-A-pak Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INTERNATIONAL RECTIFIER Features I E le c tric a lly is o la te d base p la te • 3 5 0 0 V RMS is o la tin g v o lta g e
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QQlbb72
diode D214
ZX-08
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M44100AWJ, J, L,TP, RT-6, -7,-8,-10 FAST PAGE MODE 4194304-BIT 4194304-W 0RD BY 1-BIT DYNAMIC RAM DESCRIPTIO N T his is a fa m ily o f 4 1 9 4 3 0 4 -w o rd by 1-b it d y n a m ic R AM S, PIN C O N F IG U R A T IO N (TOP V IE W ) fa b rica te d w ith th e high p e rform ance CM OS process, and
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M5M44100AWJ,
4194304-BIT
194304-W
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BUK455-60A
Abstract: BUK455 BUK455-60B T0220AB cr35 transistor
Text: PHILIPS INT ER NA TI O N AL bSE D E9 711002b DDma7b Philips Semiconductors PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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711DA2b
BUK455-60A/B
T0220AB
BUK455
BUK455-60A
BUK455-60B
cr35 transistor
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semikron skkt 90
Abstract: semikron skkt 41 SKKT41/12E skkt 103 T25-17 SKKT 330 16E SKKT 56/12 E semikron skkt skkt41/04 semikron skkt 55
Text: S E M I K R O N INC 3tE » « 1 3 b b 71 Q D G 22 70 7 • SEKG ■ t */rsm V rrm d v / V drm dt cr 75 A V /(is 48 A Itrm s (m aximum values for continuous operation) | 95 A | 75 A | 95A Itav (sin. 180; Tease = 74 °C) V V 60 A S EM IK R D N -z s n 48 A 60 A
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i3bb71
DG2270
SKKH41/06D
5001SKKT
/12Ej
fll3bb71
QQ0S27S
T-25-17
semikron skkt 90
semikron skkt 41
SKKT41/12E
skkt 103
T25-17
SKKT 330 16E
SKKT 56/12 E
semikron skkt
skkt41/04
semikron skkt 55
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Untitled
Abstract: No abstract text available
Text: S C H O T T K Y R E C T IF IE R D IO D E S , L E A D L E S S S U R F A C E M O U N T M a x im u m P eak F o rw a rd A v e ra g e S u rg e C u rre n t @ 8. 1m s R e c tifie d In v e rs e C u rre n t a t T , V o lta g e S u p e rim p o s e d »SI P a rt N um ber
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SK110
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34822-0013
Abstract: USCAR N018 ford
Text: NOTES: UNLESS OTHERWISE SPECIFIED A. RESIN; SEE COMPONENT DRAWINGS B. COLOR: SEE TABLE 2. DESIGN - GENERAL: A. THIS IS A100% CAD GENERATED PART. THE CADMATHEMATICAL DATA IS THE MASTER FOR THIS PART. FORDIMENSIONAL OR ANYINFORMATION NOT SHOWN ON THIS DRAWING. ANALYZE THE CAD MODEL.
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MX123
34822-0013
USCAR
N018
ford
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bR E D bb53T31 □□3Db40 RR1 « A P X Product Specification Philips Semiconductors BUK455-60A/B PowerMOS transistor GENERAL DESCRIPTION Q is n D S O N PARAMETER MAX. MAX. BUK455 Drain-source voltage Drain current (DC) Total power dissipation
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bb53T31
3Db40
BUK455-60A/B
BUK455
-TO220AB
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Untitled
Abstract: No abstract text available
Text: KS0079 34COM/12QSEG DRIVER & CONTROLLER FOR DOT MATRIX LCD INTRODUCTION K S0 0 7 9 is a dot matrix L C D driver & controller L S I which Is fabricated by low pow er C M O S technology. It can display 2, or 4 lines with 5 x 8 dots format. FUNCTIONS • C h a ra cte r type dot matrix L C D driver & controller
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KS0079
34COM/12QSEG
34COM/120SEG
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M44100AWJ,J,L,TP,RT-6L,-7L,-8L,-10L FAST PAGE MODE 4 1 9 4 3 0 4 -B IT 4 1 9 4 3 0 4 -W 0 R D BY 1-BIT DYNAMIC RAM D E SC R IPT IO N This is a fa m ily o f 4194304-word by 1-bit dynamic RAMS, fabricated w ith the high performance CMOS process, and
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M5M44100AWJ
4194304-word
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TIP 41c transistor
Abstract: tip 41 transistor tip 41a TIP 41 transistor TIP41C EQUIVALENT TIP41A equivalent TIP41 equivalent TIP41 Texas Instruments TIP 41 C TIP42 texas
Text: INSTR -COPTO} bl 6 9 6 1 7 2 6 TEXAS INSTR OPTO DE^II ö c]til?2 b 003bfl0fl 62C 36808 TIP 41, TIP 41A , TIP 41B, TIP 41 C , TIP41D , TIP 41 E, TIP41F N-P-N SILICON POWER TRANSISTORS J U L Y 1 9 6 8 - R E V IS E D O C T O B E R 1 9 8 4 Designed for Complementary Use With TIP42 Series
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003bfl0fl
TIP41D
TIP41F
TIP42
T0-220A
TIP 41c transistor
tip 41
transistor tip 41a
TIP 41 transistor
TIP41C EQUIVALENT
TIP41A equivalent
TIP41 equivalent
TIP41 Texas Instruments
TIP 41 C
TIP42 texas
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RD6A
Abstract: RD9.1EW R06A rd6d RD7A RD6A M
Text: -251 y x tS H m % ft € p <«* ü fm ÍL mu Vz V ) iz min (•A) RD6.8K R D 6.8L RD6.8M RD6.8MW RD6. 8P Bn sm 0 ^ a n BM 400 500 200 200 1W 6. 6. (>. Ij. 8. R D 6.8S RD6. 8UJ RD6.8UM RD6A KD6D an BM Bn B ^ 0 1 200 150 150 250 10» RD7. 5E RD7. SES RD 7.5F
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40nst?
40lst
40ns-eÂ
HK53-3
40ns7
RD6A
RD9.1EW
R06A
rd6d
RD7A
RD6A M
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tms417409
Abstract: 417409
Text: TM S 41 6409 , T M S 4 1 7 4 0 9 41 9 4 3 0 4 - W O R D B Y 4 - B IT H I G H - S P E E D D R A M S S M K S 884-M A R C H 1996 Organization . . . 4 1 9 4 3 0 4 x 4 DJ PACKAGE TOP VIEW Single 5-V Power Supply Performance Ranges: ACCESS TIME ’41x409-60 ’41x409-70
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884-M
41x409-60
41x409-70
41x409-80
tms417409
417409
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476V
Abstract: SE1117-1 SE1117-5 CWN C36 SE1117-ad SE1117-1.8 SE1117-3 SE1117 SE1117-3,3 SE111
Text: T E C H N IC A L DATA SE1117-X.X LD O L inear Regulator Features ♦ A d ju s ta b le and F ix e d c f SCT-223 1.8V . 2 .5 V . 3.3V . 5.0V ♦ Space saving SM D types o f SOT-223 ♦ O utput C urrent up to IA ♦ ♦ ♦ ♦ Low D ropout V oltage 700m V at 1A Output C urrent
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SE1117-X
OT-223
700mV
SCT-223
SE111
3E1117-AD
3E1117â
SE1117
476V
SE1117-1
SE1117-5
CWN C36
SE1117-ad
SE1117-1.8
SE1117-3
SE1117
SE1117-3,3
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SE014
Abstract: S15S4 1SR71-40 1SR72-40 1SR73-40 S15S6 S30S4A S30S6 S60S4 S60S6
Text: - 102 - ft B % S 5S 4 S5S4M S15S4 S15S6 S30S4A S30S6 S60S4 S60S6 S B 0 5-0 3C S B 0 5 -0 3 Q S B 0 5-0 5C P S B 0 5 -0 5 N P SB 0 5-0 5P S B 0 5 -0 9 S B 0 5-1 8M S B 0 7-0 3C SB0 7-0 3N S B 0 7-0 3P S B 1 0 -0 3 A 2 S B 1 0 -0 3 A 3 S B 1 0-0 4A 3 S B lO - 0 5
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S15S4
1SR71-40Â
S15S6
S30S4A
1SR72-40
S30S6
120pF
SB30-03F
160pF
SB30-03P
SE014
1SR71-40
1SR72-40
1SR73-40
S60S4
S60S6
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2SA800
Abstract: NE59300 NE59335 ci 4081 NE AND micro-X NE593 NE59312 NE59333 NE734 C-48Hrs
Text: N E C / DE bMS7414 30 C A L IF O R N IA 64 27 41 4 N E C/ CAL IFO RNIA DODQISB 0 |~~ 30C 00 15 3 07^3/-/*^ MICROWAVE TRANSISTOR SERIES FEATURES DESCRIPTION AND APPLICATIONS T he N E 5 9 3 Series of PNP silicon general purpose U H F tran sistors provide the designer w ith a wide selection of reliable
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bMS7414
NE734
Ta-25
NE593
NE59300)
NE59335
NE59333.
2SA800
NE59300
ci 4081
NE AND micro-X
NE59312
NE59333
NE734
C-48Hrs
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RD9.1EW
Abstract: RD6A
Text: -251 y x tS H m % ft € p <«* ü fm ÍL mu Vz V ) iz min (•A) RD6.8K R D 6.8L RD6.8M RD6.8MW RD6. 8P Bn sm 0 ^ a n BM 400 500 200 200 1W 6. 6. (>. Ij. 8. R D 6.8S RD6. 8UJ RD6.8UM RD6A KD6D an BM Bn B ^ 0 1 200 150 150 250 10» RD7. 5E RD7. SES RD 7.5F
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40nst?
40ns7
--18--j
E1233
RD9.1EW
RD6A
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