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    F 959 TRANSISTOR Search Results

    F 959 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F 959 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF959

    Abstract: f 959 transistor Q62702-F640
    Text: NPN Silicon RF Transistor ● For SAW filter driver applications in TV tuners ● For linear broadband VHF amplifier stages ● For oscillator applications BF 959 Type Marking Ordering Code BF 959 – Q62702-F640 Pin Configuration 1 2 3 C E Package1 TO-92


    Original     		PDF Q62702-F640 BF959 f 959 transistor Q62702-F640

    9426

    Abstract: 9527 sumitomo epoxy 6300h
    Text: 05/27/2004 RELIABILITY REPORT FOR DS2187, Rev C7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]


    Original     		PDF DS2187, 9426 9527 sumitomo epoxy 6300h

    9721

    Abstract: ABLEBONd 84-1 JEDEC hast
    Text: 03/24/2003 RELIABILITY REPORT FOR DS1005, Rev A2 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]


    Original     		PDF DS1005, reliabilit0037 9721 ABLEBONd 84-1 JEDEC hast

    mark a7 sot23

    Abstract: J-STD-20A atec 6710S CDA194 mp8000
    Text: 08/23/2004 RELIABILITY REPORT FOR DS1816, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]


    Original     		PDF DS1816, JESD78, mark a7 sot23 J-STD-20A atec 6710S CDA194 mp8000

    CDA194

    Abstract: mark a7 sot23
    Text: 08/23/2004 RELIABILITY REPORT FOR DS1810, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]


    Original     		PDF DS1810, JESD78, CDA194 mark a7 sot23

    LMISR4

    Abstract: No abstract text available
    Text: 08/23/2004 RELIABILITY REPORT FOR DS1811, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]


    Original     		PDF DS1811, JESD78, LMISR4

    PTF080901A

    Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W
    Text: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF

    CDA194

    Abstract: mark a7 sot23 mold compound
    Text: 08/23/2004 RELIABILITY REPORT FOR DS1817, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]


    Original     		PDF DS1817, JESD78, CDA194 mark a7 sot23 mold compound

    Untitled

    Abstract: No abstract text available
    Text: 08/23/2004 RELIABILITY REPORT FOR DS1818, Rev A6 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]


    Original     		PDF DS1818, JESD78,

    DD 127 D TRANSISTOR

    Abstract: A90W ptf080901e
    Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080901 PTF080901 DD 127 D TRANSISTOR A90W ptf080901e

    LM7805 smd

    Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
    Text: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080451 PTF080451 LM7805 smd LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451E

    mark a7 sot23

    Abstract: No abstract text available
    Text: 08/23/2004 RELIABILITY REPORT FOR DS1815, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]


    Original     		PDF DS1815, JESD78, mark a7 sot23

    Ablebond 84-1 LMISR4

    Abstract: No abstract text available
    Text: 08/23/2004 RELIABILITY REPORT FOR DS1812, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]


    Original     		PDF DS1812, JESD78, Ablebond 84-1 LMISR4

    Untitled

    Abstract: No abstract text available
    Text: 08/23/2004 RELIABILITY REPORT FOR DS1813, Rev A6 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]


    Original     		PDF DS1813, JESD78,

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S NPN Silicon RF Transistor BF 959 • For SAW filter driver applications in TV tuners • For linear broadband VHF amplifier stages • For oscillator applications Type Marking Ordering Code BF 959 - Q62702-F640 Pin Co nfigural ion 1 2 3 C E Package1


    OCR Scan     		PDF Q62702-F640 E35bD5 G12173M fl235bD5 D121735

    SC1959

    Abstract: 2SC1959
    Text: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 S C 1 959 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2 SC 1959) Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS . 5.1 MAX.


    OCR Scan     		PDF 2SC1959 400mA 2SA562TM. 100man SC1959) SC1959 2SC1959

    12ds7

    Abstract: 12ds7 tube Scans-0017276 general electric
    Text: 12DS7 12DS7 ET-T1551 Page 1 DUPLEX-DIODE TETRODE TUBES 9-59 FOR DETECTOR AND AF DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS DESCRIPTION A N D RATINGS T h e 12DS7 is a m iniature duplex-diode, space-charge-grid tetrode intended for use as a com bined detector, A V C rectifier, an d transistor driver. T h e tube


    OCR Scan     		PDF 12DS7 ET-T1551 12DS7 12-volt K-556 I-TD84- K-556II-TD84-2 12ds7 tube Scans-0017276 general electric

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		PDF NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D

    sot marking code ZS

    Abstract: transistor bf 290
    Text: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration


    OCR Scan     		PDF OT-23 Q62702-F1124 21el2 IS2l/S12l sot marking code ZS transistor bf 290

    Transistor NEC K 3654

    Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		PDF NE32984D NE32984D NE32984D-T1A NE32984D-SL NE32984D-T1 Transistor NEC K 3654 NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V

    transistor marking p04

    Abstract: P04 transistor transistor p04 MARKING CODE p04 LC marking code transistor
    Text: Philips Semiconductors Product specification NPN general purpose transistor PMBS3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification, e.g.


    OCR Scan     		PDF PMBS3904 PMBS3906. transistor marking p04 P04 transistor transistor p04 MARKING CODE p04 LC marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit ►Built in resistor Ri = 10kii, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363


    OCR Scan     		PDF BCR183S 10kii, Q62702-C2377 OT-363

    Untitled

    Abstract: No abstract text available
    Text: DTC363EK/DTC363ES/DTC363EF DTC363EL/DTC363EA/DTC363EV I ' 7 > y X $ /Transistors D TC 363EK /D TC 363ES/D TC 363EF D TC 363EL/D TC 363EA /D TC 363EV 5 l- T < > ? « T - > 'W h 7 > - /X J g j S r t a h 7 > -> ' X 2 ^-/Transistor Switch Digital Transistors (Includes Resistors)


    OCR Scan     		PDF DTC363EK/DTC363ES/DTC363EF DTC363EL/DTC363EA/DTC363EV 363EK 363ES/D 363EF 363EL/D 363EA 363EV 50mA/ 600mA)

    3055 transistor

    Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
    Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


    OCR Scan     		PDF D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 3055 transistor 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055