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    F 407 DIODE Search Results

    F 407 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    F 407 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NT 407 F TRANSISTOR

    Abstract: NT 407 F MOSFET TRANSISTOR
    Text: SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET N<AA NQAA S< S<F ?- L MJ K$G 407,- %*8,23.-, -', .6.,+ ?- L MJ ;IP> K$T O> *' W O &-T ?- L MJ ;IP> K$T O> ?Z Inverse diode SEMITOP 3 Mosfet Module S^ L [ S< S^F L [ S<F ?- L MJ ;IP> K$T


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    PDF 260MB10 260MB10 NT 407 F TRANSISTOR NT 407 F MOSFET TRANSISTOR

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    Abstract: No abstract text available
    Text: SK 300MB075 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET O<AA OQAA T< T<F ?- J NL M$G 407,- %*8,23.-, -', .6.,+ ?- J NL ;KS> M$U V> *' Y V &-U ?- J NL ;KS> M$U V> ?[ Inverse diode SEMITOP 3 Mosfet Module T_ J ¥ T< T_F J ¥ T<F ?- J NL ;KS> M$U


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    PDF 300MB075 300MB075

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    Abstract: No abstract text available
    Text: SK25GD126ET B- K LM N$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT P$QR BS K LM N$ D$ BS K UMV N$ D$YZ ULVV P WL F B- K XV N$ LW F MV F [ LV P BS K ULM N$ UV `- B- K LM N$ LX F B- K XV N$ Ua F MV F D$YZK L : D$0%& *'-) P$$ K ¥VV P] PEQ ^ LV P]


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    PDF SK25GD126ET

    sk35gd126

    Abstract: No abstract text available
    Text: SK35GD126ET B- K LM N$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT P$QR BS K LM N$ D$ BS K UMV N$ D$Z[ ULVV P WV F B- K XV N$ YL F ¥V F ] LV P BS K ULM N$ UV b- B- K LM N$ YW F B- K XV N$ LY F ¥V F D$Z[K L : D$0%& *'-) P$$ K ^VV P_ PEQ ` LV P_


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    PDF SK35GD126ET sk35gd126

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    Abstract: No abstract text available
    Text: SK10GD126ET B- K LM N$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT P$QR BS K LM N$ D$ BS K UMV N$ D$XY ULVV P UM F B- K WV N$ UU F UZ F [ LV P BS K ULM N$ UV _- B- K LM N$ LM F B- K WV N$ U` F aV F D$XYK L : D$0%& *'-) P$$ K ZVV P¥ PEQ ] LV P¥


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    PDF SK10GD126ET

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    Abstract: No abstract text available
    Text: SK15GD126ET B- K LM N$O 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT P$QR BS K LM N$ D$ BS K UMV N$ D$XY ULVV P LL F B- K WV N$ UM F ZV F [ LV P BS K ULM N$ UV `- B- K LM N$ LM F B- K WV N$ Ua F ZV F D$XYK L : D$0%& *'-) P$$ K ¥VV P] PEQ ^ LV P]


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    PDF SK15GD126ET

    Untitled

    Abstract: No abstract text available
    Text: ^ litron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS PET 3301 ELECTRONICS WAY • WEST PALM BEACH,FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • F A X. (407) 863-5946 600V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNI T S SYMBOL Drain-source Vo It.( 1 )


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    PDF di/dt-100A/ A32-1

    GH13D

    Abstract: No abstract text available
    Text: Æ lltron PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY • WEST PALM BEACH. FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • F A X : (407) 863-5946 P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATING S PARAMETER (Rgs-I.OMo) (1) Gate-Source Voltage Con t inuous


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    PDF -100V IF--15A. di/dt-100A/ GH13D

    Untitled

    Abstract: No abstract text available
    Text: J H l t r o n -PRODUCT DEVICES.INC. ¡177 BLUE H E R O N BLVD. • RIVIERA BEACH, FLORIDA 33404 ^ E L : 407 848-4311 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, SYMBOL UNITS Drain-source Vo 1 f .( 1 )


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    PDF IF-12A MIL-S-19500

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    Abstract: No abstract text available
    Text: JHltron PRODUCT CÂTÂLO' DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33407 TEL: 407 848-43U FAX: (407) 863-5946 C r ' U f T T T L / ’V CD i r i r n r bLHU I IKY CDOl P U W/ t K nrpT REClIrlt-KS MAXIMUM RATINGS PER DIODE 45V, SYMBOL PARAMETER


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    PDF 848-43U MIL-S-19500 MIL-STD-883 SDS13045 0DQ4015

    2N6522

    Abstract: ir6062 IR5064 IR6060 MM6427 D45E11 IR6002 2N999 IR5000 IR5253
    Text: SE MIC OND UC TO R TECHNOL OGY GSE D | fll3b4Sfl Ü0DD23S T r_ T4 7 / SEMICONDUCTOR TECHNOLOGY, INC. 3131 S.t. Jay^treet ¿7 stuarti F |0rida 34997 7" - 33 3 / 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 ' NPN & PNP' SILICON DARLINGTON TRANSISTORS


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    PDF 0DD23S 2N997 2N998 2N999 2N2723 2N2785 2N99B 2N6522 ir6062 IR5064 IR6060 MM6427 D45E11 IR6002 IR5000 IR5253

    Untitled

    Abstract: No abstract text available
    Text: Æ lltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 1177 B L U E H E R O N BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL 407 848-4311 * TLX: 51-3435 » F A X : (407) 863-5946 400V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Vo It.(1)


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    PDF i/dt-100A/

    Untitled

    Abstract: No abstract text available
    Text: Æutran PRODUCT D EVI CE S .I NC . N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY • WEST P ALM BEACH, FLORIDA 33407 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 51-343S « F A X : (407) 863-5946 ABSOLUTE MAXIMUM 1000V, 4.4A, 4 . on RATINGS PARAMETER UNITS SYMBOL


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    PDF 51-343S A47-1

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    Abstract: No abstract text available
    Text: JTlitxan PRODUCT DEVICES.INC. 1177 S L U E H E R O N BLVD. • R I V I E R A BEACH, F L O R I D A 33404 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source


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    2SC15-0

    Abstract: No abstract text available
    Text: Æwtron DEVICES.INC. 3301 E L E C TRONICS WAY • WEST P ALM BEACH. FLORIDA 33407 TEL: 407; 848-4311 • TLX: S I -343S • F AX: (407 863-S946 P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER -100V.-19A. SYMBOL D r a m - s o u r c ! Vo 1 t .( 1 )


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    PDF -343S 863-S946 -100V --15A, di/dt-100A/ 2SC15-0

    tegra 250

    Abstract: tegra 2
    Text: Æwtian PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY » W E S T PALM BEACH.FLORIDA 33407 T E L : 407 848-4311 • TLX: 51-3435 « F A X : (407) 863-5946 ABSOLUTE 600V, SYMBOL D rain-sou rce D rain-G a te Vo I t . ( 1 ) V oltage (Rgs=1.0Mo) (1) G ate-Source V oltage


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    PDF SDF20N60 5DF20N60 SDF20N60 IF-20A tegra 250 tegra 2

    N 407 Diode

    Abstract: No abstract text available
    Text: Æutron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRO NICS WAY • WEST P ALM BEACH. FLORIDA 33407 TEL. 407 848-4311 • TLX: SI-3 43 5 « F AX : (407) 863-5946 1000V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D r a i n - S o u r c e \/o 1 t . ( 1 )


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    PDF 300iiS 03bflb02 N 407 Diode

    Untitled

    Abstract: No abstract text available
    Text: Æ iitro n PRODUCT D E V I CE S .I N C. l177 BLUE H E R O N B L V D . • RIVIERA BEACH. FLORIDA 33404 TEL: 407 048-4311 • TLX: 51-3435 « F A X : N-CHANNEL ENHANCEMENT MOS FET 1000V, 4 . 4 A , 4 . 0 Q (407) 863-594G ABSOLUTE MAXIMUM RATINGS PARAMETER


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    PDF 863-594G 63bfibD2

    Untitled

    Abstract: No abstract text available
    Text: JHltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MÜS FET 3301 E L E C T R O N I C S W A Y • W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 0 6 3 - 5 9 4 6 MAXIMUM SYMBOL PARAMETER D r □ in-source Volt.(l)


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    Untitled

    Abstract: No abstract text available
    Text: Æiltron 3301 E L E C T R O N I C S WAV. TEL: 407 048-4311 PRODUCT CÂTÂL ' DEVICES,INC. N-CHANNEL ENHANCEMENT MOS FET W E S T P A L M BE AC H. F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt.(l)


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    PDF MIL-S-19500 SDF440

    Untitled

    Abstract: No abstract text available
    Text: Æ iitr o n PRODUCT DEVICES.INC. 1 1 7 7 B L U E H E R O N BL VD . • R I V I E R A B E AC H. F L O R I D A 3 3 4 0 4 T E L : 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 • F A X : (407) 8 G 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS


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    PDF SDF21N60 00A/p

    SDF034

    Abstract: No abstract text available
    Text: Æ litron 330! E L E C T R O N I C S WAY, TEL: 407 848-4311 PRODUCT DEVICES,INC. W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 FA X: (407) 8 6 3 - 5 9 4 6 N -C H A N N E L ENHANCEM ENT MOS F E T ABSOLUTE MAXIMUM RATINGS PARAMETER Total 60V, SYMBOL D r a i n - s o u r c e Vo I t .(1)


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    PDF SDF034 SDF034 MIL-S-19500 fl3bfib02

    Untitled

    Abstract: No abstract text available
    Text: Æ iitron 3 3 0 1 E L E C T R O N IC S W A Y . TEL: 407 848-4311 PRODUCT DEVICES.INC. W E S T P A LM B E A C H , F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS PET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1 t . ( 1 )


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    PDF 300iiS,

    Untitled

    Abstract: No abstract text available
    Text: / “litron PRODUCT DEVICES.INC. 3301 E L E C T R O N I C S W A Y » W E S T P A L M B E A C H , F L O R I D A 33407 T E L : 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 • FA X: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS FET 600V, ABSOLUTE MAXIMUM RATINGS


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    PDF IF-20A MIL-S-19500