Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    EXCELICS 70MIL PACKAGE Search Results

    EXCELICS 70MIL PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    EXCELICS 70MIL PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EFA060B-70

    Abstract: No abstract text available
    Text: Excelics EFA060B-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +24.0dBm TYPICAL OUTPUT POWER 7.5 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EFA060B-70 70mil 12GHz 18GHz EFA060B-70

    EFA040A-70

    Abstract: PT 1132
    Text: Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EFA040A-70 70mil 12GHz 18GHz EFA040A-70 PT 1132

    EFA080A-70

    Abstract: No abstract text available
    Text: Excelics EFA080A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EFA080A-70 70mil 12GHz 18GHz EFA080A-70

    Excelics EPA018A

    Abstract: EPA018A-70 EPA018A7 Excelics 70mil PACKAGE
    Text: Excelics EPA018A-70 DATA SHEET High Efficiency Heterojunction Power FET 44 19 4 20 S S 70 D 40 • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED


    Original     		PDF EPA018A-70 70mil 18GHz 12GHz Excelics EPA018A EPA018A-70 EPA018A7 Excelics 70mil PACKAGE

    EPA080A-70

    Abstract: 744 773 047
    Text: Excelics EPA080A-70 DATA SHEET High Efficiency Heterojunction Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +25.5dBm TYPICAL OUTPUT POWER 7.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA080A-70 70mil 12GHz EPA080A-70 744 773 047

    EPA040A-70

    Abstract: No abstract text available
    Text: Excelics EPA040A-70 DATA SHEET High Efficiency Heterojunction Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA040A-70 70mil 18GHz 12GHz Com52 EPA040A-70

    EFA018A-70

    Abstract: EFA018A
    Text: Excelics EFA018A-70 DATA SHEET Low Distortion GaAs Power FET 20 P1dB G1dB PAE NF Ga S S 70 D G All Dimensions In mils. ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS 44 19 4 40 • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +18.5dBm TYPICAL OUTPUT POWER


    Original     		PDF EFA018A-70 70mil 12GHz 18GHz EFA018A-70 EFA018A

    EFA025A-70

    Abstract: EFA025
    Text: Excelics EFA025A-70 DATA SHEET Low Distortion GaAs Power FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +20.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz


    Original     		PDF EFA025A-70 70mil 12GHz 18GHz EFA025A-70 EFA025

    EPA025A-70

    Abstract: 0466 1.5 micron
    Text: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz


    Original     		PDF EPA025A-70 70mil 18GHz 12GHz Rn/50 EPA025A-70 0466 1.5 micron

    EPA060B-70

    Abstract: 2657 FET EPA060B
    Text: Excelics EPA060B-70 DATA SHEET High Efficiency Heterojunction Power FET     6  6 * PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Applications • High Dynamic Range LNA • DC to 18 GHz  '  0LQ $OO /HDGV Features • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE


    Original     		PDF EPA060B-70 70mil 26dBm Rn/50 EPA060B-70 2657 FET EPA060B

    Excelics 70mil PACKAGE

    Abstract: EFA080A-70
    Text: EFA080A-70 Low Distortion GaAs Power FET FEATURES S S 70 D 40 • • • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE


    Original     		PDF EFA080A-70 70mil 12GHz 18GHz Excelics 70mil PACKAGE EFA080A-70

    V3055

    Abstract: No abstract text available
    Text: EPA018B-70 High Efficiency Heterojunction Power FET ISSUED 11/01/2007 FEATURES • • • • • • • Non-Hermetic Low Cost Ceramic 70mil Package +20.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 18GHz Typical 0.75 dB Noise Figure and 12.5 dB Associated Gain at 12GHz


    Original     		PDF EPA018B-70 70mil 18GHz 12GHz V3055

    EPA040A-70

    Abstract: igd 515 Excelics 70mil PACKAGE
    Text: EPA040A-70 High Efficiency Heterojunction Power FET UPDATED 11/22/2004 FEATURES • • • • • • NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE +25.5 dBm OUTPUT POWER AT 1dB COMPRESSION 7.0 dB POWER GAIN AT 12GHz 0.3 x 800 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EPA040A-70 70MIL 12GHz 18GHz EPA040A-70 igd 515 Excelics 70mil PACKAGE

    EFA025A-70

    Abstract: No abstract text available
    Text: EFA025A-70 Low Distortion GaAs Power FET UPDATED 04/28/2006 FEATURES • • • • • • • • None-Hermetic Low Cost Ceramic 70mil Package +20.0 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 12GHz 7.0 dB Power Gain at 18GHz Typical 1.50 dB Noise Figure and


    Original     		PDF EFA025A-70 70mil 12GHz 18GHz Rn/50 EFA025A-70

    EPA018BV-70SC

    Abstract: Excelics 70mil PACKAGE noise gate compression
    Text: EPA018BV-70SC High Efficiency Heterojunction Power FET ISSUED 01/31/2006 FEATURES • • • • • • • None-Hermetic Low Cost Ceramic 70mil Package +20.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 18GHz Typical 0.75 dB Noise Figure and


    Original     		PDF EPA018BV-70SC 70mil 18GHz 12GHz EPA018BV-70SC Excelics 70mil PACKAGE noise gate compression

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF