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    EUTEC Search Results

    EUTEC Datasheets (162)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EUA2005 EUTECH Microelectronics 1.5-W Mono Filterless Class-D Audio Power Amplifier Original PDF
    EUA2005JIR1 EUTECH Microelectronics 1.5-W Mono Filterless Class-D Audio Power Amplifier Original PDF
    EUA2011 EUTECH Microelectronics 3-W Mono Filterless Class-D Audio Power Amplifier Original PDF
    EUA2011HIR1 EUTECH Microelectronics 3-W Mono Filterless Class-D Audio Power Amplifier Original PDF
    EUA2011JIR1 EUTECH Microelectronics 3-W Mono Filterless Class-D Audio Power Amplifier Original PDF
    EUA4890 EUTECH Microelectronics 1 Watt Audio Power Amplifier Original PDF
    EUA4890A EUTECH Microelectronics 1 Watt Audio Power Amplifier Original PDF
    EUA4890AHIR1 EUTECH Microelectronics 1 Watt Audio Power Amplifier Original PDF
    EUA4890JIR1 EUTECH Microelectronics 1 Watt Audio Power Amplifier Original PDF
    EUA4890MIR1 EUTECH Microelectronics 1 Watt Audio Power Amplifier Original PDF
    EUA4992 EUTECH Microelectronics 2W Stereo Audio Power Amplifier Original PDF
    EUA4992JIR1 EUTECH Microelectronics 2W Stereo Audio Power Amplifier Original PDF
    EUA5202 EUTECH Microelectronics 2-W Stereo Audio Power Amplifier with Mute Original PDF
    EUA5202QIR0 EUTECH Microelectronics 2-W Stereo Audio Power Amplifier with Mute Original PDF
    EUA5202QIR1 EUTECH Microelectronics 2-W Stereo Audio Power Amplifier with Mute Original PDF
    EUA5202QIT1 EUTECH Microelectronics 2-W Stereo Audio Power Amplifier with Mute Original PDF
    EUA5212 EUTECH Microelectronics 2-W Stereo Audio Power Amplifier with Four Selectable Gain Settings Original PDF
    EUA5212QIR0 EUTECH Microelectronics 2-W Stereo Audio Power Amplifier with Four Selectable Gain Settings Original PDF
    EUA5212QIR1 EUTECH Microelectronics 2-W Stereo Audio Power Amplifier with Four Selectable Gain Settings Original PDF
    EUA5212QIT1 EUTECH Microelectronics 2-W Stereo Audio Power Amplifier with Four Selectable Gain Settings Original PDF
    ...

    EUTEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DM6030HK

    Abstract: MAAP-000077-SMB004 AN3016 DM4030LD MAAP-000077-PED000 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAPGM0077-DIE
    Text: Amplifier, Power, 13W 0.7-2.5 GHz MAAP-000077-PED000 Rev — Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation


    Original     		PDF MAAP-000077-PED000 MAAPGM0077-PED000 10-mil DM6030HK MAAP-000077-SMB004 AN3016 DM4030LD MAAP-000077-PED000 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAPGM0077-DIE

    sac 405

    Abstract: WLCSP flip chip IPACK2005 sensors mttf WLCSP chip mount SAC405 thetaja wlcsp "sac 405"
    Text: The Effect of Electromigration on Eutectic SnPb and Pb-free Solders in Wafer Level-Chip Scale Packages Joanne Huang1, Stephen Gee2, Luu Nguyen2, King-Ning Tu1 1 Department of Materials Science and Engineering, University of California - Los Angeles, Los Angeles,


    Original     		PDF IPACK200573417. sac 405 WLCSP flip chip IPACK2005 sensors mttf WLCSP chip mount SAC405 thetaja wlcsp "sac 405"

    LED LASER

    Abstract: ausn submount
    Text: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high


    Original     		PDF 18-Jul-08 LED LASER ausn submount

    Untitled

    Abstract: No abstract text available
    Text: LNE1 Die Specifications LNE1 G D S Backside: Source All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width LNE1 30 30 Thickness 11 ± 1.5 Backside Metal Au Material Al-Si Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.


    Original     		PDF

    A210C

    Abstract: CTX4
    Text: Surface Mount TCXO • 4.0 mm max. height • Wide temperature range CARDINAL COMPONENTS CTX4 • Various input supply voltage options • Eutectic reflow soldering possible Part Numbering Example: CTX4 L Z - A3 B3 - 15.360 CTX4 L Z A3 B3 15.360 SERIES CTX4


    Original     		PDF T-090414-12 A210C CTX4

    Untitled

    Abstract: No abstract text available
    Text: Recommended Reflow Soldering Profile Limiting Values* The below temperature profile for moisture sensitivity characterization is based on the IPC/JEDEC joint industry standard: J-STD-020D-01. Profile Feature SnPb eutectic assembly Pb-free assembly Average ramp-up rate Tsmax to Tp


    Original     		PDF J-STD-020D-01.

    Untitled

    Abstract: No abstract text available
    Text: MAAP-000078-PED000 Amplifier, Power, 12W 2.0—6.0 GHz M/A-COM Products Preliminary: Rev B Features ♦ 12 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation


    Original     		PDF MAAP-000078-PED000 MAAPGM0078-PED000 10-mil

    x-band power amplifier

    Abstract: DM6030HK
    Text: Amplifier, Power, 16W 1.3-2.5 GHz MAAP-000076-PED000 Rev A Preliminary Datasheet Features ♦ 16 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation


    Original     		PDF MAAP-000076-PED000 MAAPGM0076-PED000 10-mil x-band power amplifier DM6030HK

    DM6030HK

    Abstract: No abstract text available
    Text: MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev A Preliminary Datasheet Features ♦ 8 Watt Saturated Output Power Level ♦ Eutectically mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation


    Original     		PDF MAAP-000074-PED000 MAAP-000074-PED000 10-mil DM6030HK

    BGA PROFILING

    Abstract: fine BGA thermal profile M21131 hot air bga M21151 M21161 M21141G reflow hot air BGA M21136 M21151V
    Text: 211xx-APP-002-A April 2006 SMT BGA Ball Grid Array Eutectic Solder Balls Application Note Products Affected: M21131, M21131V, M21136, M21141G4, M21141G5, M21151, M21151V, M21156, M21161G4, M21161G5 Introduction The objective of this application note is to provide the basic SMT design and process requirements necessary to


    Original     		PDF 211xx-APP-002-A M21131, M21131V, M21136, M21141G4, M21141G5, M21151, M21151V, M21156, M21161G4, BGA PROFILING fine BGA thermal profile M21131 hot air bga M21151 M21161 M21141G reflow hot air BGA M21136 M21151V

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G9230-01 Uses small package with no wire Features Applications l Easy to handle since there are no wires on chip AnSn eutectic bonding Optical fibers can be brought closer to the chip l Miniature package: 2 x 2 × 1 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm)


    Original     		PDF G9230-01 SE-171 KIRD1055E01

    OPA9437EU

    Abstract: Au Sn eutectic
    Text: Infrared LED Chip OPA9437EU GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF


    Original     		PDF OPA9437EU 100mA 14mil 15mil 130um 14mil OPA9437EU Au Sn eutectic

    eutectic

    Abstract: No abstract text available
    Text: VF53 Die Specifications VF53 G S Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF53 30 56 Thickness 8 ± 1.0 Backside Metal Au Material Al/Si Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.


    Original     		PDF

    diode 028

    Abstract: 1n4148 die MIL-PRF-19500 1N4148-1 HCR4148D HCR4148M HCR4148MTX
    Text: OPTEK Product Bulletin HCR4148 September 1996 Surface Mount Switching Diode Types HCR4148D, HCR4148M, TX, TXV Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Constructed from ceramic, metal, and glass for rugged environments • Eutectic mounted silicon die.


    OCR Scan     		PDF HCR4148 HCR4148D, HCR4148M, HCR4148D HCR4148M 1N4148-1 MIL-PRF-19500/116. MIL-PRF-19500 diode 028 1n4148 die HCR4148D HCR4148M HCR4148MTX

    Untitled

    Abstract: No abstract text available
    Text: raOEXyXgTT ÄTFÄ[L N - C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .019" (0.483mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .


    OCR Scan     		PDF 483mm) 0254mm) fl3bflb02

    2N2606

    Abstract: No abstract text available
    Text: » M © ? ©ÄY£\[L© P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 À Gold ASSEM BLY RECOMMENDATIONS 016" (0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 406mm) 0254mm) 2N2606 2N2608, 2N3376, 2N3378, 2N3695 2N3698 fl3bflb05

    Untitled

    Abstract: No abstract text available
    Text: Ä 1TM, Q ( N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .017" i f t l (0.432mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 016 " (0.406mm) Die Size- It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .


    OCR Scan     		PDF 432mm) 406mm) 0254mm) 2N3821 2N3824, 2N3921 2N3922, 2N5545 2N5547

    Untitled

    Abstract: No abstract text available
    Text: N-CH ANNEL JU N C TIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021“ 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon prelonn 98/2%.


    OCR Scan     		PDF 533mm) 0254mm) flb02 D0D41G3

    Untitled

    Abstract: No abstract text available
    Text: THIN FILM BACK CONTACT RESISTORS MSBC SERIES The M S B C series back contact chip resistor offers designers a space-saving design in a . 0 2 0 " x . 0 2 0 " size that requires only one wire bond. The chip backside provides the other contact with eutectic or conductive epoxy attachment to the


    OCR Scan     		PDF 125mW, 100ppm MSBC-2-S-T-10K-01

    transistor CD 910

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SSDI y oo S P T 3571 HIGH FREQUENCY TRANSISTOR NPN CASE STYLE 14830 VALLEY VIEW LA MIRADA, CA.90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES ► t t 900 MHz fT MIN, 4 GHz fT MAX GOLD EUTECTIC DIE ATTACH LOW NOISE FIGURE < 4 dB


    OCR Scan     		PDF

    2N5911

    Abstract: Junction-FET 2N5397 2N5398 2N5912 U257 FS3D
    Text: -Ælitron [F> ®®[yj Tr N -C H A N N E L J U N C T IO N FET Devices. Inc. CHIP NUMBER IN CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . Hr (0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 533mm) 0254mm) 2N5911 Junction-FET 2N5397 2N5398 2N5912 U257 FS3D

    2N2606

    Abstract: 2N3376 2N3378 2N3698 2N2608 2N3695
    Text: -Ætttron Devices, Inc. P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS _ .016" _ 0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 406mra) 0254mm) 2N2606 2N3376 2N3378 2N3698 2N2608 2N3695

    IC 7424

    Abstract: SFT5094 pnp transistor 600V TRANSISTOR 714
    Text: SFT5094 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSD1 (7734) • Fax: (714) 522-7424 1 Amp 600 Volts PNP TRANSISTOR Designer’s Data Sheet FEATURES: Low Profile Surface Mount Package 200° C O perating, Eutectic Die Attach


    OCR Scan     		PDF 670-SSDI SFT5015 10Vdc) 100mA 300ns, IC 7424 SFT5094 pnp transistor 600V TRANSISTOR 714

    UC734

    Abstract: 2N4116 2N3823 fet 2N3823 2n5105 2N5485 2NS105 2N3452 2N5104
    Text: Contran e^@[D iij(gTr a i m , ( IM-CHAIMIMEL J U N C T I O N FE T Devices. CHIP NUMBER CONTACT METALLIZATIOIM Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS It is advisable that: (0.305mm) a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 305mm) 0254mm) UC734 2N4116 2N3823 fet 2N3823 2n5105 2N5485 2NS105 2N3452 2N5104