EUPEC DD 53 S 1200 K Search Results

EUPEC DD 53 S 1200 K Result Highlights (5)

Part	Manufacturer	Description
XPN12006NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF)
TPN12008QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance
CS1200	Coilcraft Inc	Current Sense Transformer, 35A, 1:200
CS1200L	Coilcraft Inc	Current Sense Transformer, 35A, 1:200, ROHS COMPLIANT
HPH5-1200LD	Coilcraft Inc	General Purpose Inductor, 173uH, 25%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT

EUPEC DD 53 S 1200 K Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FS20R06XE3 Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors	Original	PDF	D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Untitled Abstract: No abstract text available Text: SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V	Original	PDF	SIGC81T120R2CS SIGC81T120R2CS Q67050A4050-A001 7161-T,
FS75R12KS4 Abstract: SIGC121T120R2CS infineon igbt die 1200V Text: SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V	Original	PDF	SIGC121T120R2CS SIGC121T120R2CS Q67050A4074-A003 7171-T, FS75R12KS4 infineon igbt die 1200V
Untitled Abstract: No abstract text available Text: SIGC25T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC25T120CS2 VCE ICn 1200V 15A This chip is used for:	Original	PDF	SIGC25T120CS2 Q67050-A4197 7141-T,
FP25R12 Abstract: No abstract text available Text: SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:	Original	PDF	SIGC42T120CS2 Q67050A4338-A101 7151-T, FP25R12
Untitled Abstract: No abstract text available Text: SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC42T120CS2 VCE ICn 1200V 25A This chip is used for:	Original	PDF	SIGC42T120CS2 Q67050A4338-A101 7151-T,
fs100r12ks4 Abstract: SMPS IC 2003 SIGC156T120R2CS infineon igbt die 1200V Text: SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A	Original	PDF	SIGC156T120R2CS SIGC156T120R2CS Q67050A4085-A003 7181-T, fs100r12ks4 SMPS IC 2003 infineon igbt die 1200V
FS100R12KS4 Abstract: No abstract text available Text: SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A	Original	PDF	SIGC156T120R2CS Q67050A4085-A003 SIGC156T120R2CS 7181-T, FS100R12KS4
FS450R12KE3 S1 Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120 Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.	Original	PDF	E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
c828 npn transistor datasheet Abstract: FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet Text: HybridPACK Hybrid Kit for HybridPACK™2 Evaluation Kit for Applications with HybridPACK™2 Module Application Note V2.2, 2010-03 System Engineering Edition 2010-03 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG	Original	PDF	intellecR214 R0402 R0603 3314J c828 npn transistor datasheet FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	PDF	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
DD 127 D Abstract: dd 127 dd 127 d EUPEC DD 31 800 DD 127 EUPEC DD 31 N 1200 k EUPEC DD 53 s 1200 k DD 53 S 1200 K Text: EUPEC 4^E D 3 ^ 3 3 3 1 7 0 0 0 0 1 1 1 Sfl? • Fast diode modules Type V RRM •f r m s m •f s m / i zdt 10 ms, 10 ms, tv, tv[ max tvj max tvj max If a v m ^ c V TO = UPECT ^ S - ö f fT Ir m tvj = tv j = t VJ m ax tv j max - d i/d t R th C K tv) max	OCR Scan	PDF
DD 127 D Abstract: dd 127 dd 127 d dd 22 s 800 eupec dd 82 DD 53 S 1200 K DD 127 EUPEC DD 31 800 EUPEC DD 53 s 1200 k Text: EUPEC MTE D 34D35T? Fast diode modules Type V RRM If r m s m D D D D in Ifs m / i 2dt 10 ms, 10 ms, tv,= tv j m ax Wj m ax tv j max Ifa v m ^ V TO c SÔ7 • It = tv j max UPEC A A A2s A/°C tvj max K/W K/W °C R th J C 180 °el sin. -d i/d t 100 V R (hC K	OCR Scan	PDF	34D35T? DD22S DD 127 D dd 127 dd 127 d dd 22 s 800 eupec dd 82 DD 53 S 1200 K DD 127 EUPEC DD 31 800 EUPEC DD 53 s 1200 k
68A76 Abstract: AI2O3 Text: EUPEC blE D • 3403217 ÜGGlSflfi fl32 « U P E C DD 45 S Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Stoßspitzenspannung non repetitive peak	OCR Scan	PDF	tvjS25Â 68A76 AI2O3

Untitled Abstract: No abstract text available Text: EUPEC blE D • SMOaST? OOOllMT 101 « U P E C TT 32 F, TD 32 F, DT 32 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state	OCR Scan	PDF
EUPEC TT 25 N 12 Abstract: No abstract text available Text: EUPEC blE J> m 34032^7 G00115b 341 H U P E C TT 42 F, T D 42 F, DT42 F Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um rated values Periodische Vorwärts- und R ückw ärts-Spitzensperrspan n ung repetitive peak forw ard off-state	OCR Scan	PDF	G00115b EUPEC TT 25 N 12
EUPEC TT 56 n 12 Abstract: EUPEC TT 56 n 16 TD 42 F eupec TD 42 F 10 td-42 f 04 EUPEC TD 42 EUPEC DD 53 s 1200 k TSM 123 EUPEC TD 56 N 08 EUPEC tt 25 N 12 Text: blE T> EUPEC m 34032^7 000115b 341 « U P E C TT 42 F, TD 42 F, DT 42 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state	OCR Scan	PDF	000115b EUPEC TT 56 n 12 EUPEC TT 56 n 16 TD 42 F eupec TD 42 F 10 td-42 f 04 EUPEC TD 42 EUPEC DD 53 s 1200 k TSM 123 EUPEC TD 56 N 08 EUPEC tt 25 N 12
EUPEC DD 53 s 1200 k Abstract: DD 53 S 1200 K EUPEC tt 95 n Text: EUPEC tilE T> MM 34D3ET7 0D0114'] 1G1 « U P E O TT 32 F, TD 32 F, DT 32 F Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um rated values Periodische Vorw ärts- und Rückwärts-Spitzensperrspannung repetitive peak forw ard off-state	OCR Scan	PDF
JRC 45600 Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541 Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES	OCR Scan	PDF	ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541

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EUPEC DD 53 S 1200 K Search Results

EUPEC DD 53 S 1200 K Result Highlights (5)

EUPEC DD 53 S 1200 K Datasheets Context Search

FS20R06XE3

Untitled

FS75R12KS4

Untitled

FP25R12

Untitled

fs100r12ks4

FS100R12KS4

FS450R12KE3 S1

c828 npn transistor datasheet

FSQ510 Equivalent

DD 127 D

DD 127 D

68A76

Untitled

EUPEC TT 25 N 12

EUPEC TT 56 n 12

EUPEC DD 53 s 1200 k

JRC 45600