IC-524
Abstract: 74as
Text: SN 54AS881A, S N 74AS 8 8 1A ARITH M ETIC LOGIC UNITS/FUNCTION G ENERATORS D 2 6 6 1 , DECEMBER 1 9 8 2 - • Package Options Include Plastic "Small Outline" Packages, Both Plastic and Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs •
|
OCR Scan
|
PDF
|
54AS881A,
300-mil
AS881A
IC-524
74as
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package
|
OCR Scan
|
PDF
|
TIM7179-4
MW50970196
TIM7179-4
|
2N335
Abstract: No abstract text available
Text: TYPE 2N335 N-P-N GROWN-JUNCTION SILICON TRANSISTOR U LL E T IN NO. DL-S 591038. M A R C H 1959 Beta From 36 to 90 Specifically designed for high gain at high temperatures nw chw ical data W eld ed ca se w ith g lass-to -m etal h erm etic seal betw een ca se an d lead s. U n it w eig h t is ap p ro x im a te ly
|
OCR Scan
|
PDF
|
2N335
|
tic 2250
Abstract: 74AS887 1/triac tic 2250 S-8871 74AS887-1 rJ17
Text: 1 SN54AS887, SN74AS887 8 BIT PROCESSORS i • STL-AS Technology • Parallel 8 -Bit ALU w ith Expansion Inputs and Outputs • 13 Arithm etic and Logic Functions • 8 • 4 Instructions th at Manipulate Bits • Add and Subtract Immediate Instructions •
|
OCR Scan
|
PDF
|
SN54AS887,
SN74AS887
74AS887-1
tic 2250
74AS887
1/triac tic 2250
S-8871
rJ17
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package
|
OCR Scan
|
PDF
|
TIM5964-8A
2-11D1B)
at260
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package
|
OCR Scan
|
PDF
|
TIM1415-2
MW50390196
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package
|
OCR Scan
|
PDF
|
TIM7785-16
TIM7785-16
|
50920-1
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package
|
OCR Scan
|
PDF
|
TIM6472-16
TIM6472-16
50920-1
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package
|
OCR Scan
|
PDF
|
TIM4450-16
UnW50530196
MW50530196
TPM4450-16
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G 1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally m atched • H erm etically sealed package
|
OCR Scan
|
PDF
|
TIM5359-16
TIM5359-16
|
applications of ripple carry adder
Abstract: N8260N TA 8261 GATE ARRY TA 8260
Text: The 8260 A rithm etic Logic Element is a m onolithic gate array incorporating fou r full-adders stru cture d in a look-ahead mode. The device may be used as fou r m utually independent exclusive NOR or AND gates by proper addressing o f the inhib it lines.
|
OCR Scan
|
PDF
|
|
diodes byw
Abstract: No abstract text available
Text: Temic BYW82.BYW86 S e m i c o n d u c t o r s Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • L ow reverse current • H igh surge current loading • E lectrically equivalent diodes:
|
OCR Scan
|
PDF
|
BYW82.
BYW86
1N5624
1N5625
12-Dec-94
diodes byw
|
3C91C
Abstract: 3C92C 3C92
Text: Tem ic 3C91C/ 3C92C S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The 3C 91C / 3C92C consist o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in a 4-lead herm etically sealed metal can.
|
OCR Scan
|
PDF
|
3C91C/
3C92C
3C92C
3C91C
03-Jun-96
3C91C
3C92
|
2N7076
Abstract: No abstract text available
Text: Tem ic 2N7076 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) 200 0.10 28 TO-254AA H erm etic P ackage O Case Isolated DSC, Top View N-Channel MOSFE'I' Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
|
OCR Scan
|
PDF
|
2N7076
O-254AA
1503C)
P-36736--Rev.
2N7076
|
|
|
2N7227
Abstract: SV400
Text: Tem ic 2N7227JANTX/JANTXV Siliconix N-Channel Enhancement-Mode Transistors Product Summary V D S V r DS(on) (Q ) I d (A) 400 0.415 14 Parametric limits in accordance with M 1I.-S-19500I592 where applicable. TO-254AA H erm etic Package o G 0 - It Case Isolated
|
OCR Scan
|
PDF
|
2N7227JANTX/JANTXV
-S-19500I592
O-254AA
1503C)
p-37164--Rev.
2N7227
SV400
|
Untitled
Abstract: No abstract text available
Text: Tem ic BYW178 S e m i c o n d u c t o r s Very Fast Silicon Mesa Rectifier Features • G lass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristics • Very fast reverse recovery tim e • Low reverse recovery peak current
|
OCR Scan
|
PDF
|
BYW178
12-Dec-94
|
byt54
Abstract: No abstract text available
Text: Te m ic BYT54. T EL E FU N K E N Sem iconductors Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristics Applications Very fast rectifiers and sw itches
|
OCR Scan
|
PDF
|
BYT54.
byt54
|
Untitled
Abstract: No abstract text available
Text: Tem ic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, etically Sealed TO 18 Case Description TSTA 7100 is a high efficiency infrared em itting diode in G aA lA s on G aA lA s technology in a herm etically sealed T O -1 8 package. Its glass lens provides a very high radiant
|
OCR Scan
|
PDF
|
TSTA7100
15-Jul-96
|
Untitled
Abstract: No abstract text available
Text: TEMIC BZW03D. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • G lass passivated junction • H erm etically sealed package • C lam ping sealed package Applications Voltage regulators and transient suppression circuits
|
OCR Scan
|
PDF
|
BZW03D.
500ns
12-Dec-94
|
Untitled
Abstract: No abstract text available
Text: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View
|
OCR Scan
|
PDF
|
2N7089
O-257AB
1503C)
P-36731--
P-36731--Rev.
|
byt51
Abstract: byt51a telefunken em 800
Text: Te m ic BYT51. TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • L ow reverse current Applications R ectifiers Absolute Maximum Ratings Tj = 25°C Param eter Test C onditions Reverse voltage, peak reverse voltage
|
OCR Scan
|
PDF
|
BYT51.
BYT51A
BYT51B
byt51
telefunken em 800
|
byv ultra Fast Recovery Rectifier
Abstract: byv 27 ST 9527
Text: Te m ic BYV27/. TELEFUNKEN Semiconductors Ultra Fast Silicon Mesa Rectifiers Features • Controlled avalanche characteristic • L ow forward voltage • Ultra fast recovery time • G lass passivated junction • H erm etically sealed package Applications
|
OCR Scan
|
PDF
|
BYV27/.
byv ultra Fast Recovery Rectifier
byv 27
ST 9527
|
2N7080
Abstract: No abstract text available
Text: Tem ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 - 9 .5 T O -2 5 4 A A S H erm etic Package 9 O C ase Isolated O u uu D D S G Top View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
|
OCR Scan
|
PDF
|
2N7080
P-37012--
2N7080
|
diode ep sod-323
Abstract: 1N4148 SOD-323 A
Text: MCL4148.MCL4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively • M icro Melf package
|
OCR Scan
|
PDF
|
MCL4148
MCL4448
1N4148
1N4448
Res448
01-Apr-99
diode ep sod-323
1N4148 SOD-323 A
|
