sumitomo
Abstract: HUW9824079-01A SLT1100 SLT1101 SLT1106
Text: Sumitomo Electric Industries Part No. SLT1100 Series Doc No. HUW9824079-01A Date of Issue. January 14, 1999 Technical Specification of 1.3µm MQW-FP Laser Diode: SLT1100 Series Sumitomo Electric Industries, Ltd. -1- Sumitomo Electric Industries Part No. SLT1100 Series
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SLT1100
HUW9824079-01A
InGaAsP/16P
CSLT1100
sumitomo
HUW9824079-01A
SLT1101
SLT1106
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ESID DIODE
Abstract: HUW9824104-01A SLT1230 SLT1231 SLT1236 Sumiotmo Electric Industries
Text: Sumitomo Electric Industries, Ltd. Part No. SLT1230 Series Doc. No. HUW9824104-01A Date of Issue February 22, 1999 Technical Specification of 1.3µm MQW-DFB Laser Diode: SLT1230 Series Sumitomo Electric Industries, Ltd. -1- Sumitomo Electric Industries, Ltd.
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SLT1230
HUW9824104-01A
maximum30
ESID DIODE
HUW9824104-01A
SLT1231
SLT1236
Sumiotmo Electric Industries
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SLT4210
Abstract: SLT4260-XS Sumitomo Electric SLT4260-xs SLT4260-QS Sumitomo Electric SLT4260 SLT4210-DN SLT4260-CS slt4266 SLT4266-DP Sumitomo Electric
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4210 SLT4260 Series HUW9723030-01L April 1, 2000 Technical Specification of 1.3µm MQW-DFB Laser Diode Module for 2.5Gb/s Transmission SLT4210 Series SLT4260 Series Sumitomo Electric Industries, Ltd.
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SLT4210
SLT4260
HUW9723030-01L
SLT4260-XS
Sumitomo Electric SLT4260-xs
SLT4260-QS
Sumitomo Electric SLT4260
SLT4210-DN
SLT4260-CS
slt4266
SLT4266-DP
Sumitomo Electric
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ESID DIODE
Abstract: thermal diode
Text: Application Note Manual Collection of PowerPC970FX Processor Thermal Calibration Values Abstract The PowerPC970FX processor contains a thermal diode used to monitor the temperature of the processor’s die. Because of subtle shifts in the manufacturing process, the V/I characteristics of the diode shift.
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PowerPC970FX
PowerPC970
ESID DIODE
thermal diode
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Sumitomo Electric
Abstract: ESID moto HUW9924060-01A SPT1400 SPT1401 General Semiconductor Industries diodes
Text: Sumitomo Electric Industries, Ltd. Part No.: SPT1400 Series Document No.: HUW9924060-01A Date of Issue: August 22, 1999 Technical Specification of Long Wavelength PIN Photodiode: SPT1400 Series Sumitomo Electric Industries Sumitomo Electric Industries, Ltd.
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SPT1400
HUW9924060-01A
SPT1500
Sumitomo Electric
ESID
moto
HUW9924060-01A
SPT1401
General Semiconductor Industries diodes
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SUMITOMO
Abstract: ESID moto HUW9924061-01A SPT1410 SPT1411
Text: Sumitomo Electric Industries, Ltd. Part No.: SPT1410 Series Document No.: HUW9924061-01A Date of Issue: August 22, 1999 Technical Specification of Long Wavelength PIN Photodiode: SPT1410 Series Sumitomo Electric Industries Sumitomo Electric Industries, Ltd.
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SPT1410
HUW9924061-01A
SUMITOMO
ESID
moto
HUW9924061-01A
SPT1411
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R -n 74F1056 8-Bit S chottky B arrier Diode A rray General Description The ’ F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress
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74F1056
F1056
74F1056SC
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M14A
Abstract: MM74C08 MM74C08M MM74CD8N MS-001 N14A
Text: O ctober 1987 Revised January 1999 S E M IC O N D U C TO R T M MM74C08 Quad 2-Input AND Gate General Description protected from dam age due to static discharge by diode clam ps to V c c and GND. T he M M 74C 08 em ploys co m plem entary MOS CMOS transistors to achieve wide pow er supply operating range,
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MM74C08
MM74C08
M14A
MM74C08M
MM74CD8N
MS-001
N14A
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74F243
Abstract: 74F243SC M14A
Text: Revised July 1999 s e m ic o n d u c t o r 74F243 Quad Bus Transceiver with 3-STATE Outputs General Description Features T h e 74F 243 is a quad bus transm itter/receiver designed for • 2-W ay asynchronous data bus com m unication 4-line asynchronous 2-w ay d ata com m unications between _ Input clam p diodes limit high-speed term ination effects
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74F243
74F243
74F243SC
14-Lead
MS-120,
M14A
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74c906
Abstract: M74C906N MM74C907
Text: Revised January 1999 E M I C Q N D U C T G R tm MM74C906 • MM74C907 Hex Open Drain N-Channel Buffers Hex Open Drain P-Channel Buffers General Description All inputs are protected from static discharge by diode clam ps to V qq and to ground. The M M 74C 906 and M M 74C 907 buffers em ploy m onolithic
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MM74C906
MM74C907
74c906
M74C906N
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74HC04N
Abstract: 74HC04M 74HC04S MM74HC04M
Text: s A e m I R i c C o n H d u I L D c t o Revised February 1999 r MM74HC04 Hex Inverter are protected from dam age due to static discharge by inter nal diode clam ps to V qq and ground. General Description The M M 74H C 04 inverters utilize advanced silicon-gate
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MM74HC04
74HC04N
74HC04M
74HC04S
MM74HC04M
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74hc32m
Abstract: No abstract text available
Text: „ r Revised February 1999 SEMICONDUCTOR TM MM74HC32 Quad 2-Input OR Gate General Description All inputs are protected from dam age due to static dis charge by internal diode clam ps to V qq and ground. The MM 74H C 32 OR gates utilize advanced silicon-gate
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MM74HC32
74hc32m
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74HC00N
Abstract: IC 74HC00N 74hc00 fan-out MM74HC00M 74HC00M
Text: „ r Revised February 1999 SEMICONDUCTOR TM MM74HC00 Quad 2-Input NAND Gate static discharge by internal diode clam ps to Vc c and General Description The M M 74HC00 NAND gates utilize advanced silicon-gate C M OS tech n olo gy to achieve operating speeds sim ilar to
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MM74HC00
74HC00
74HC00N
IC 74HC00N
74hc00 fan-out
MM74HC00M
74HC00M
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Untitled
Abstract: No abstract text available
Text: E M IC Q N D U C T G R Revised February 1999 tm MM74HCT273 Octal D-Type Flip-Flop with Clear General Description All inputs to this device are protected from dam age due to electrostatic discharge by diodes to Vc c and ground. The M M 74H C T273 utilizes advanced silicon-gate CM OS
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MM74HCT273
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R 74F243 Quad Bus Transceiver w ith 3-STATE O utputs General Description The ’ F243 is a quad bus transmitter/receiver designed for 4-line asynchronous 2-way data communications between data busses. Input clamp diodes limit high-speed termination effects
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74F243
54F243DM
74F243SC
54F243FM
54F243LM
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D4030A
Abstract: d4030
Text: A I R C H I L D O ctober 1987 Revised January 1999 SEMICONDUCTOR TM General Description protected from dam age due to static discharge by diode clam ps to V DD and V Ss- T h e C D4070BC em ploys com plem entary MOS CMOS transistors to achieve w ide pow er supply operating range,
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CD4070BC
CD4070BC
D4070BC
D4030A
d4030
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MM740906
Abstract: M14A MM74C906 MM74C906M MM74C906N MM74C907 MM74C907N MS-001 N14A mm74c80
Text: Revised January 1999 E M IC O N D U C T G R T M MM74C906 • MM74C907 Hex Open Drain N-Channel Buffers Hex Open Drain P-Channel Buffers General Description All inputs are protected from static discharge by diode clam ps to V qq and to ground. T he M M 74C 906 and M M 74C 907 buffers em ploy m onolithic
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MM74C906
MM74C907
MM74C906
MM74C907
MM740906
M14A
MM74C906M
MM74C906N
MM74C907N
MS-001
N14A
mm74c80
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MM74HCT74
Abstract: 74HCT 74LS M14A M14D M74HCT74MTC MM74HCT74M MM74HCT74SJ
Text: Revised January 1999 E M IC O N D U C T G R T M MM74HCT74 Dual D-Type Flip-Flop with Preset and Clear General Description tected from dam age due to static discharge by internal diode clam ps to Vc c and ground. T he M M 74H C T74 utilizes advanced silicon-gate C M OS
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MM74HCT74
MM74HCT74
74HCT
74LS
M14A
M14D
M74HCT74MTC
MM74HCT74M
MM74HCT74SJ
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74hc86s
Abstract: mm74hc86a
Text: Revised February 1999 SEMICONDUCTOR TM MM74HC86 Quad 2-Input Exclusive OR Gate inputs are protected from dam age due to static discharge by internal diode clam ps to V qq and ground. General Description The M M 74H C 86 EXC LU SIVE O R gate utilizes advanced
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MM74HC86
74hc86s
mm74hc86a
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power supply schematic 60v
Abstract: 74HCU 74LS M14A M14D MM74HCU04 MM74HCU04M MM74HCU04MTC MM74HCU04SJ MTC14
Text: s e m ic o n d u c t o r Revised February 1999 MM74HCU04 Hex Inverter General Description are protected from dam age due to static discharge by inter nal diode clam ps to V qq and ground. T he M M 74H C U04 inverters utilize advanced silicon-gate C M O S technology to achieve operating speeds sim ilar to
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MM74HCU04
74HCU
power supply schematic 60v
74LS
M14A
M14D
MM74HCU04M
MM74HCU04MTC
MM74HCU04SJ
MTC14
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74HCT74N
Abstract: No abstract text available
Text: Revised January 1999 EMICQNDUCTGR tm MM74HCT74 Dual D-Type Flip-Flop with Preset and Clear General Description tected from dam age due to static discharge by internal diode clam ps to Vc c and ground. The M M 74H C T74 utilizes advanced silicon-gate CM OS
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MM74HCT74
74HCT74N
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74HCT138N
Abstract: No abstract text available
Text: A I R C H I L D Revised February 1999 S E M I C D N D U C T D R tm MM74HCT138 3-to-8 Line Decoder General Description the 74LS138. All inputs are protected from dam age due to static discharge by diodes to V c c and ground. The M M 74H C T138 deco d e r utilizes advanced silicon-gate
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MM74HCT138
74HCT138N
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MM74HC08
Abstract: 74HC 74LS HC08 M14A M14D MM74HC08M MM74HC08MTC MM74HC08SJ diagram LG TV circuits
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC08 Quad 2-Input AND Gate General Description All inputs are protected from dam age due to static dis charge by internal diode clam ps to V qq and ground. T he M M 74H C 08 AND gates utilize advanced silicon-gate
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MM74HC08
MM74HC08
74HC
74LS
HC08
M14A
M14D
MM74HC08M
MM74HC08MTC
MM74HC08SJ
diagram LG TV circuits
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74HCT
Abstract: M20D MM74HCT273 MM74HCT273MTC MS-013 MTC20
Text: Revised February 1999 E M IC O N D U C T G R T M MM74HCT273 Octal D-Type Flip-Flop with Clear General Description All inputs to this device are protected from dam age due to electrostatic discharge by diodes to Vc c and ground. T he M M 74H C T273 utilizes advanced silicon-gate C M OS
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MM74HCT273
MM74HCT273
MM74HCT
74HCT
M20D
MM74HCT273MTC
MS-013
MTC20
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