Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF658/D
MRF658
MRF658/D*
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ERIE CAPACITORS
Abstract: SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent
Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF658/D
MRF658
MRF658/D*
ERIE CAPACITORS
SAHA Mica capacitors
MRF658
erie capacitor
SAHA
trimmer 3-30 pf
nippon capacitors
GRH710
MURATA ERIE CAPACITOR
MOTOROLA 381 equivalent
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MRF658
Abstract: SAHA Mica capacitors ERIE CAPACITORS nippon capacitors MURATA ERIE CAPACITOR GX-0600-55-22 MOTOROLA 381 equivalent CAPACITOR MURATA 420 NPN Silicon RF Transistor murata erie
Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF658/D
MRF658
MRF658
MRF658/D*
MRF658/D
SAHA Mica capacitors
ERIE CAPACITORS
nippon capacitors
MURATA ERIE CAPACITOR
GX-0600-55-22
MOTOROLA 381 equivalent
CAPACITOR MURATA
420 NPN Silicon RF Transistor
murata erie
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graff Thermal conductance across metal joints
Abstract: ceramic tube amplifier TP-105 TP-118 TP-122 7843
Text: Return To Product Page 7843 Power Tube Conduction-Cooled UHF Beam Power Tube • • • • Cermolox Construction Oxide-Coated Cathode Conduction Cooled Peak Power Output: 400 MHz - 80 W 1215 MHz-40W BURLE 7843 is a compact, conduction-cooled UHF beam power tube designed for applications where air
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Hz-40W
graff Thermal conductance across metal joints
ceramic tube amplifier
TP-105
TP-118
TP-122
7843
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TP-105
Abstract: TP-118 TP-122 erie ceramic radiator 0,019
Text: Return To Product Page 4631 Power Tube Beam Power Tube - Cermolox - Ruggedized - Oxide-Coated Cathode - Forced-Air Cooled - 80 Watts CW Power Output at 400 MHz - 40 Watts CW Power Output at 1215 MHz BURLE 4631 is a compact, forced-air cooled uhf beam power
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Royer oscillator circuit diagram
Abstract: PM6064 smps isolated 12v output smps ic smd 8 pin DATA SHEET OF IC 7909 mc34063a step down external transistor 267M1602226 Royer oscillator mullard toroids computer smps circuit diagram
Text: AP-357 APPLICATION NOTE Power Supply Solutions for Flash Memory MICHAEL EVANS ANIL SAMA BRIAN DIPERT APPLICATIONS ENGINEERING INTEL CORPORATION December 1995 Order Number 292092-002 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in
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AP-357
MAX734
MAX761
MAX662
MAX756
LT1301
PM6064
MAX732
Royer oscillator circuit diagram
smps isolated 12v output
smps ic smd 8 pin
DATA SHEET OF IC 7909
mc34063a step down external transistor
267M1602226
Royer oscillator
mullard toroids
computer smps circuit diagram
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ERIE CAPACITORS
Abstract: GX-0600-55-22 MURATA ERIE CAPACITOR erie capacitor 2443 MOTOROLA transistor SAHA Mica capacitors Erie TRIMMER CAPACITOR SAHA erie .33 400 MRF658
Text: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF658 The RF Line NPN Silicon RF Power Transistor D esigned for 12.5 Voit U H F large-signal, common emitter, class-C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. 65 W, 512 MHz
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MRF658
MRF658
ERIE CAPACITORS
GX-0600-55-22
MURATA ERIE CAPACITOR
erie capacitor
2443 MOTOROLA transistor
SAHA Mica capacitors
Erie TRIMMER CAPACITOR
SAHA
erie .33 400
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ERIE CAPACITORS
Abstract: MURATA ERIE CAPACITOR ERIE CAPACITORS TYPE K erie capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silico n RF Pow er Transistor Designed for 12.5 Volt UHF large-signal, common emitter, c la s s-C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Specified 12.5 Volt, 512 MHz Characteristics
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MRF658
ERIE CAPACITORS
MURATA ERIE CAPACITOR
ERIE CAPACITORS TYPE K
erie capacitor
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transistor D 2581
Abstract: ERIE CAPACITORS TYPE K ERIE CAPACITORS N5060 erie .33 400 Erie TRIMMER CAPACITOR CAPACITOR MURATA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor D e sign e d for 12.5 Volt U H F large-signal, com m on emitter, c la s s - C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. • Specified 12.5 Volt, 512 M H z Characteristics
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MRF658
transistor D 2581
ERIE CAPACITORS TYPE K
ERIE CAPACITORS
N5060
erie .33 400
Erie TRIMMER CAPACITOR
CAPACITOR MURATA
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QE RB 29
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Transistor Designed for 12.5 Volt UHF large-signal, common emitter, class-C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Specified 12.5 Volt, 512 MHz Characteristics
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MRF658
QE RB 29
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Y5P102K
Abstract: MA2830 LQH3C1R0M04M00 MA2810-1 6003R3 RVG4F03A PLH11L-6003R3 PLA3021A TZB04 TZ03Z500FR169
Text: DESIGN ENGINEERING KITS CAPACITORS— CHIP MONOLITHIC * • ■ ■ ■ ■ Miniature size Wide capacitance, TC, voltage and tolerance range Industry standard sizes 8mm and 12mm tape and reel for auto-placements Barrier layer termination systems for wave, reflow or vapor
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GRM39COG010B100AB
GRM39COG1R5B1OOAB
GRM39COG2R2B1
GRM39COG3R3B1
GRM39COG4R7B1
GRM39COG6R8C1
GRM39COG100D1
GRM39COG150J10OAB
GRM39COG220J100
GRM39COG330J100AB
Y5P102K
MA2830
LQH3C1R0M04M00
MA2810-1
6003R3
RVG4F03A
PLH11L-6003R3
PLA3021A
TZB04
TZ03Z500FR169
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SP900
Abstract: N5600
Text: cer4-9.pdf source 7/24/98 4:38 PM Page 1 SPECTRUM CONTROL INC. yer Electrostatic Discharge ESD proof Available from .05 pF - 5,000 pF Standard voltage range of 50-100 VDC Excellent for Broadband and Microwave Applications Custom sizes, values, shapes, tolerances and highest
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40ppm
50ppm
SP900
N5600
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323
MRF323
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Johanson 2320
Abstract: 565-9065 FERROXCUBE VK200
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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56-590-65/4B)
VK200-19/4B
80-mii-Thick
MRF325
Johanson 2320
565-9065
FERROXCUBE VK200
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9200-300-0024
Abstract: 9923-100-6002 9215-300-0025 9932-100-6005 9200-300-0025 9200-300-0022
Text: EMI SUPPRESSION FILTERS HERM ETICALLY SEALED m u fin tn C T Y P E - S o lder M ount - 1 3961 r r i6 3 5 “ n (2 79', p " I Glass Seal I [ 1=3- .0300 I 76l Potting Leadisl WVDC Min. Full Load Insertion Loss (dB) Current 85°C 125°C | IDC i 10MHz 100MHz | 1GHz
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10MHz
100MHz
10GHz
9200-300-0024
9923-100-6002
9215-300-0025
9932-100-6005
9200-300-0025
9200-300-0022
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Untitled
Abstract: No abstract text available
Text: c erl4-19.pdf source 7/27/98 9:35 AM Page 1 SPECTRUM CONTROL INC. Highest Q chip available 20% performance increase over standard High Q chips on the market Ideal for high performance RF/Microwave applications 500 WVDC High self-resonance Mechanical Capacitance range 1 to 100 pF
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erl4-19
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MRF327
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band
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80-mil-Thick
MRF327
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jmc 5201
Abstract: 5659065 565-9065 jmc 5501 56-590-65 VK200-19
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —
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MRF325
jmc 5201
5659065
565-9065
jmc 5501
56-590-65
VK200-19
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ferroxcube 56-590-65
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 20 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323
MRF323
ferroxcube 56-590-65
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jmc 5201
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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MRF321
jmc 5201
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VK-200-19
Abstract: VK200 ferrite choke
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed primarily for wideband large-signal output amplifier stages In the 100 to 500 MHz frequency range. • • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts
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MRF326
MRF326
RF326
VK-200-19
VK200 ferrite choke
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vk200 coil
Abstract: FERROXCUBE VK200 jmc 5201
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts
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MRF321
vk200 coil
FERROXCUBE VK200
jmc 5201
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5201 IC equivalent
Abstract: MRF326 UG-58
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF326 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER
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MRF326
MRF326
5201 IC equivalent
UG-58
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56-590-65
Abstract: MRF325 jmc 5201 565-9065
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts
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MRF325
56-590-65
jmc 5201
565-9065
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