MMBT2907ALT1G
Abstract: data sheet transisters transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage
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MMBT2907ALT1
MMBT2907ALT1/D
MMBT2907ALT1G
data sheet transisters
transisters datasheets
1N916
MMBT2907ALT1
MMBT2907ALT3
MMBT2907ALT3G
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MMBT2907ALT1G
Abstract: transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage
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MMBT2907ALT1
MMBT2907ALT1/D
MMBT2907ALT1G
transisters datasheets
1N916
MMBT2907ALT1
MMBT2907ALT3
MMBT2907ALT3G
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d2166
Abstract: Hyperstone ding dong GMS30C2116 GMS30C2132 d1431 6116 sram d557 d2529 sr0n
Text: Jun 13, 2001 Ver. 3.1 16/32 BIT RISC/DSP GMS30C2116 GMS30C2132 USER’S MANUAL Revision 3.1 Published by IDA Team in Hynix Semiconductor Inc. ¨ ÏHynix Semiconductor 2001. All Right Reserved. Hynix Offices in Korea or Distributors and Representatives listed at address directory may serve
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GMS30C2116
GMS30C2132
32bits
d2166
Hyperstone
ding dong
GMS30C2116
GMS30C2132
d1431
6116 sram
d557
d2529
sr0n
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Hyperstone
Abstract: ding dong GMS30C2116 GMS30C2132 GMS30C2216 GMS30C2232 d1135
Text: Jun. 29, 2001 Ver. 3.1 16/32 BIT RISC/DSP GMS30C2216 GMS30C2232 USER’S MANUAL Revision 3.1 Published by IDA Team in Hynix Semiconductor Inc. ¨ ÏHynix Semiconductor 2001. All Right Reserved. Hynix Offices in Korea or Distributors and Representatives listed at address directory may
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GMS30C2216
GMS30C2232
32bits
Hyperstone
ding dong
GMS30C2116
GMS30C2132
GMS30C2216
GMS30C2232
d1135
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fe 1.1s
Abstract: GM76C512 a 683 transister GM76 GM76C256B GM76C5 cs25-02
Text: @ LG Semicon. Co., LTD. Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/E&s. The device is placed in a low
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GM76C256B
55/70/E
GM76C256BL/BLL
450mil)
55/70/85ns
CS250
fe 1.1s
GM76C512
a 683 transister
GM76
GM76C5
cs25-02
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equal transister
Abstract: AS3LC2M16
Text: February 2002 Advance information AS3LC2M16 2.7V to 3.3V 2M X 16 IntelliwattTM Super Low-Power CMOS Pseudo Static SRAM Features • • • • • • • AS3LC2M16 Intelliwatt active power circuitry Industrial, commercial and extended temperature ranges
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AS3LC2M16
48-ball
equal transister
AS3LC2M16
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Untitled
Abstract: No abstract text available
Text: February 2002 Advance Information AS3V2M16 2.7V to 3.3V 2M X 16 Super Low-Power CMOS Pseudo Static SRAM Features • • • • • • AS3V2M16 Industrial, commercial and extended temperature ranges Organization: 2M words x 16 bits 2.7V to 3.3V power supply range
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AS3V2M16
48-ball
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serdes hdmi optical fibre
Abstract: camera-link to hd-SDI converter RS-485 spice camera-link to HDMI converter 10G BERT 40 pin lvds laptop connector camera-link to 3G-SDI converter hd-SDI deserializer LVDS HDMI cat5 specifications of tdr
Text: LVDS Owner’s Manual Including High-Speed CML and Signal Conditioning Fourth Edition 2008 High-Speed Interface Technologies Overview. 9-13 Network Topology. 15-17 SerDes Architectures. 19-29 Termination and Translation.31-38
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at08a
Abstract: electronic ballast with MJE13002 electronic 40 w tube light choke 40 w electronic tube light choke SIMPLE 40w inverter circuit tube light choke test FERRITE core TRANSFORMER 300 watt inverter MJE12007 Ferrite 3c8 ELECTRONIC BALLAST 40W SCHEMATIC
Text: ELECTRONIC BALLASTS, Prepare,y R, J.Haver Motorola Inc. Voltage fed and current fed resonant inverter circuits for fluorescent lamp ballasts are discussed and a design example is presented. ,:!$,. A typical fluorescent lamp is a l-to 2-inch diameter on its
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200mA.
MJE13002
200kHz
4-15V)
200mA
AR1635,
at08a
electronic ballast with MJE13002
electronic 40 w tube light choke
40 w electronic tube light choke
SIMPLE 40w inverter circuit
tube light choke test
FERRITE core TRANSFORMER 300 watt inverter
MJE12007
Ferrite 3c8
ELECTRONIC BALLAST 40W SCHEMATIC
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CMOS op-amp
Abstract: No abstract text available
Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 1 HIGH PERFORMANCE, HIGH RELIABILITY, CMOS ARRAY FAMILY
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USI-6000
CMOS op-amp
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USI6000
Abstract: MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister
Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 This Material Copyrighted By Its Respective Manufacturer
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USI-6000
C31G33
USI6000
MICRON RESISTOR Mos
operational amplifier discrete schematic
transistors cross reference list
transistors cross reference
nmos pmos array
pMOS transistor
transisTOR q106
cmos opamp
photo transister
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S3 TRIO 64
Abstract: No abstract text available
Text: UNITED MICROELECTRONICS Ì 2 D Ë | TBSSôia 0Q004SS 3 9325812 U N IT E D M IC R O E L E C T R O N IC S 92D 00455 D J l7 7 -/3 U M 5101 rr.T .n Voice Recording and r ” " i Reproducing CTJ- Features • DRAM is used as a voice data memory. ■ The RC oscillator makes sample rate changing fea%
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0Q004SS
8K-32K
f/15V
UM5101
UMS101
/200V
S3 TRIO 64
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Untitled
Abstract: No abstract text available
Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-FET input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/2058/2059/2060.
Input62
NJM062/
100ffi)
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NJM062
Abstract: No abstract text available
Text: J-fET INPUT O P E R A M M L AMPLIFIER ^ NJM062/064 T he NJM062/064 are J-F E T input operational amplifiers which w ere designed as low-power versions of the NJM082. T hey featu re high input im pedance, wide bandw idth, high slew rate, and low input offset and bias current. T he NJM062
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/2058/2059/2060.
NJM062/
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M69030P
Abstract: Ceramic CAPACITOR KA5 M50196-001P Ceramic CAPACITOR KA4 M69030 M50196 vmc mitsubishi kwe 15h M5019 KA5 capacitor
Text: MITSUBISHI SOUND PROCESSORS M 5 0 1 9 6 -0 0 1 P DIGITAL KEY CONTROLLER DESCRIPTION M 5 0 1 9 6 -0 0 1 P is a digital key control IC fabricated w ith PIN CONFIGURATION TOP VIEW silicon-gate CMOS technology. M 5 0196-001 P converts frequencies by firs t A-D converting
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100n7
14HPF1
16REF
18D-G
22KDN
23TFA
M69030P
M5218
M69030P
Ceramic CAPACITOR KA5
M50196-001P
Ceramic CAPACITOR KA4
M69030
M50196
vmc mitsubishi
kwe 15h
M5019
KA5 capacitor
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1.5v Quartz Clock
Abstract: Digital Alarm Clock 40 pin digital alarm clock ic transister circuit of alarm clock KS5221A KS5221 "Frequency Divider" KS5221E KS5221F
Text: KS5221 CMOS DIGITAL INTEGRATED CIRCUIT BIPOLAR STEPPING MOTOR DRIVE ANALOG CLOCK The KS5221 series w ith alarm fun ction is CMOS integrat ed c irc u it fo r use in c lo c k w ith bip o la r step ping m otor. FUNCTIONS • O utput pulse du ration: KS5221A = 0.5Hz, 1 sec
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KS5221
KS5221
KS5221A
KS5221E
KS5221F
768KHz
768Hz
1.5v Quartz Clock
Digital Alarm Clock 40 pin
digital alarm clock ic
transister
circuit of alarm clock
KS5221A
"Frequency Divider"
KS5221E
KS5221F
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NJM062
Abstract: ic njm4558 pin diagram
Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/2058/2059/2060.
ic njm4558 pin diagram
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CT7605
Abstract: vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor
Text: WESTCODE SEMICONDUCTORS 1TE D ìto tiss G D G ain 1 r - S 3 -is-. Technical Publication WESTCODE SEMICONDUCTORS CT7605 Issue 3 . July 1985 NPN POWER TRANSISTOR CT7605 I K \ Ratings POWERSWITCH 600 VOLTS 250 AM PERES Fast Switching V CEV 600V V CEO SUS 500V
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CT7605
545kgfÂ
100kgf
47nux
100mA
lc200A
CT7605
vbe 12v, vce 600v NPN Transistor
Westcode
Darlington 30A
darlington NPN 600V 50a transistor
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transisters
Abstract: No abstract text available
Text: NJM062/064 p R C l J-FET INPUT OPERATIONAL AMPLIFIER PACKAGE OUTLINE • GENERAL DESCRIPTION T h e N JM 0 6 2 /0 6 4 are J-F E T in p u t o p e ra tio n a l a m p lifie rs w hich w ere designed as lo w -p o w er versions o f the N JM 082. T h ey feature high in p u t im pedance, w ide bandw idth, h ig h slew rate, and low input
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NJM062/064
transisters
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NJM062
Abstract: NJM082D NJM064 NJM082 transisters 429 dip8
Text: NJM062/064 J-FET INPUT OPERATIONAL AMPLIFIER PACKAGE OUTLINE • GENERAL DESCRIPTION The N JM 062/064 are J-FET input operational am plifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/
10l2n
NJM082D
NJM082
transisters
429 dip8
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Untitled
Abstract: No abstract text available
Text: NJM062/064 J-fET INPUT OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE T he N J M 062/064 are J-FET input operational am plifiers w hich were designed as low -p ow er versions o f the N JM 082. They feature high input impedance, w ide bandwidth, high slew rate, and low input
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NJM062/064
MQ62D
KJM82M
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NJM062
Abstract: No abstract text available
Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 T he NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. T hey feature high input im pedance, wide bandw idth, high slew rate, and low input offset and bias current. T he NJM062
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/2058/2059/2060.
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Untitled
Abstract: No abstract text available
Text: NJM062/064 E jw q J-FET INPUT OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE T h e N JM 0 6 2 /0 6 4 are J -F E T in p u t o p eratio n al a m p lifie rs w hich w ere desig n ed as lo w -p o w er versions o f the N JM 082. They feature high input im pedance, w ide bandw idth, high slew rate, and low input
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NJM062/064
transiste-50
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battery c-s2
Abstract: 76C8128 566 function
Text: GM76C8128BSL LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C8128SL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.7«m advanced CMOS technology and it provides high speed operation with minimum
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GM76C8128BSL
GM76C8128SL
55/70/85ns.
76C8128BSL
32-pin
600mil)
525mil)
28BSL
battery c-s2
76C8128
566 function
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