Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    EPITAXX APD Search Results

    EPITAXX APD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR4211TH-AZ Renesas Electronics Corporation Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications Visit Renesas Electronics Corporation

    EPITAXX APD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    InGaAs Epitaxx APD

    Abstract: EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver
    Text: Product Bulletin ERM 577 2.5 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V All specifications without connector. Parameter Measurement Conditions


    Original     		PDF 1E-10 InGaAs Epitaxx APD EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver

    InGaAs Epitaxx APD

    Abstract: receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver
    Text: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter APD Breakdown


    Original     		PDF 578XCX 578XCX. InGaAs Epitaxx APD receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver

    InGaAs Epitaxx APD

    Abstract: Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX
    Text: Product Bulletin ERM 578BKX 10 Gb/s Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +8V All specifications without connector. Parameter APD Breakdown Voltage, Vb


    Original     		PDF 578BKX InGaAs Epitaxx APD Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX

    InGaAs Epitaxx APD

    Abstract: InGaAs apd photodiode Photodiode apd high sensitivity InGaas PIN photodiode, 1550 sensitivity APD bias gain avalanche photodiode receiver InGaAs Epitaxx linear APD, applications, bias supply receiver avalanche 1550 fiber 2.5 10 gb APD receiver
    Text: Product Bulletin ERM 537/547 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω All specifications without connector. Parameter Responsivity APD PIN Dark Current


    Original     		PDF

    InGaAs Epitaxx APD

    Abstract: avalanche photodiodes InGaas APD detector, 1550 sensitivity epitaxx APD photovoltaic receiver 1550 InGaAs apd photodiode Si apd photodiode 10 gb APD receiver apd 1550 rise time, dark, capacitance EPITAXX erm 577
    Text: Erik Jonsson School of Engineering & Computer Science The University of Texas at Dallas OPTICAL DETECTORS AND RECEIVERS Notes prepared for EE 6310 by Professor Cyrus D. Cantrell August–December 2003 c C. D. Cantrell 06/2003 The University of Texas at Dallas


    Original     		PDF

    InGaAs Epitaxx APD

    Abstract: Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier
    Text: Product Bulletin ERM 578DKX 10 Gb/s High Sensitivity Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +5.7V All specifications without connector. Parameter


    Original     		PDF 578DKX InGaAs Epitaxx APD Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier

    EPITAXX

    Abstract: Ir photodiodes ETX75FJ-SLR 0491 ETX75FC InGaAs Epitaxx
    Text: 54E D EPITAXX INC „ 90-24A tF Release Date: îMMEDïATE Contact: Karen Kinsman • 33bG4Q a QODGiab ? ■ EPX Press Release EPITAXX ANNOUNCES AVAILABILITY OF LOW BACK REFLECTION PHOTODIODES FOR ANALOG VIDEO AND INSTRUMENTATION -x ~ ‘~ EPITAXX offers a modified version of its standard


    OCR Scan     		PDF ETX75FJ-SLR. 0-24A 75FC-SLR 75FJ-SLR EPITAXX Ir photodiodes ETX75FJ-SLR 0491 ETX75FC InGaAs Epitaxx

    ETX 40

    Abstract: InGaAs Epitaxx APD epitaxx ETX1000T epitaxx APD INGAAS avalanche EPITAXX InGaAs Epitaxx APD ETX ingaas apd photodetector
    Text: IDE D | 33b04Dfc. ODQQDSfl 5 EPITAXX INC HIGH SPEED InGaAs PIN PHOTODETECTORS Part Number ETX60B ETX 75 CER-H ETX 75T . ETX100TL ETX 300T •' ETX 75 FJ/FC T - Dark Size Capacitance i/umj Current nA . fpF) 0.1 . . 60 . 0.3 ~ •• ; 75 . • ' Vi , 0.1 •'


    OCR Scan     		PDF 33b04Dfc. ETX60B ETX100TL O-46lens 10OTL 300TL ETX500T 1000T 2000T5 3000T5 ETX 40 InGaAs Epitaxx APD epitaxx ETX1000T epitaxx APD INGAAS avalanche EPITAXX InGaAs Epitaxx APD ETX ingaas apd photodetector

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


    OCR Scan     		PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541