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    EPC2016 Price and Stock

    Efficient Power Conversion EPC2016C

    GANFET N-CH 100V 18A DIE
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    DigiKey EPC2016C Digi-Reel 119,900 1
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    EPC2016C Cut Tape 119,900 1
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    EPC2016C Reel 117,500 2,500
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    TAIYO YUDEN LSEPC2016KKT1R0M

    FIXED IND 1UH 3.5A 48 MOHM SMD
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    DigiKey LSEPC2016KKT1R0M Reel 3,000 3,000
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    LSEPC2016KKT1R0M Reel 3,000
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    Mouser Electronics LSEPC2016KKT1R0M 1,846
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    Newark LSEPC2016KKT1R0M Cut Tape 3,000 1
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    LSEPC2016KKT1R0M Reel 3,000
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    Chip1Stop LSEPC2016KKT1R0M Cut Tape 2,950
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    TAIYO YUDEN LSEPC2016KKTR47M

    FIXED IND 470NH 4.7A 26 MOHM SMD
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    DigiKey LSEPC2016KKTR47M Cut Tape 2,918 1
    • 1 $0.32
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    LSEPC2016KKTR47M Digi-Reel 2,918 1
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    LSEPC2016KKTR47M Reel 3,000
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    Mouser Electronics LSEPC2016KKTR47M
    • 1 $0.32
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    TTI LSEPC2016KKTR47M Reel 3,000
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    TAIYO YUDEN LSEPC2016KKT2R2M

    FIXED IND 2.2UH 2.3A 100MOHM SMD
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    DigiKey LSEPC2016KKT2R2M Cut Tape 2,790 1
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    LSEPC2016KKT2R2M Digi-Reel 2,790 1
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    LSEPC2016KKT2R2M Reel 3,000
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    Mouser Electronics LSEPC2016KKT2R2M 2,945
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    TTI LSEPC2016KKT2R2M Reel 3,000
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    Chip1Stop LSEPC2016KKT2R2M Cut Tape 775
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    Efficient Power Conversion EPC2016

    GANFET N-CH 100V 11A DIE
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    DigiKey EPC2016 Reel
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    EPC2016 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPC2016 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 11A BUMPED DIE Original PDF
    EPC2016C EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 100V 18A BUMPED DIE Original PDF

    EPC2016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: EPC2016 eGaN FET DATASHEET EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 16 mΩ ID , 11 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure


    Original     		PDF EPC2016 EPC2016

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2016 EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 16 mW ID , 11 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		PDF EPC2016 EPC2016

    Untitled

    Abstract: No abstract text available
    Text: Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A 1000kHz Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9010 development board does not have any current or thermal protection on board.


    Original     		PDF 1000kHz) EPC9010 EPC2016

    Untitled

    Abstract: No abstract text available
    Text: 1 2 3 4 5 6 A A 7 - 12 Vdc U3 8 1 2 7 CON2 C10 1uF, 25V 6 OUT NC NC NC NC NC GND 1 VCC 2 C11 1uF, 25V 3 C4 4 1uF, 25V 9 5 MCP1703 IN GND J1 PWM1 J2 U1 1 2 A VCC B J5 CON4 1 TP2 Keystone 5015 1 2 3 4 B VDD 70V Max R1 10k B 4 3 2 1 CON2 J9 1 2 GND Y Q1 R11 Zero


    Original     		PDF MCP1703 NC7SZ00L6X EPC2016 LM5113 SDM03U40 NC7SZ08L6X