EPB025A Search Results

EPB025A Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EPB025A		Excelics Semiconductor	3-5V high super low noise high gain heterojunction power FET		Original	PDF
EPB025A		Excelics Semiconductor	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB025A-70		Excelics Semiconductor	3-5V low noise high gain heterojunction power FET		Original	PDF
EPB025A-70		Excelics Semiconductor	Super Low Noise High Gain Heterojunction FET		Original	PDF

EPB025A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EFA018A Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70 Text: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20	Original	EPB018A5 EPB018A7 EPB018A9 EPB025A V/15mA EFA018A EFA025A EFA018A EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70	PDF
EPB025A-70 Abstract: No abstract text available Text: EPB025A-70 Low Noise High Gain Heterojunction FET FEATURES • • S S 70 • D 40 • 20 NON-HERMETIC LOW COST CERAMIC 70 MIL PACKAGE TYPICAL 0.85dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPB025A-70 12GHz EPB025A-70	PDF
EPB025A Abstract: No abstract text available Text: Excelics EPB025A DATA SHEET Low Noise High Gain Heterojunction FET • • • • • 420 TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES	Original	EPB025A 12GHz Micr128 EPB025A	PDF
EPB025A Abstract: Low Noise High Gain Text: EPB025A Low Noise High Gain Heterojunction Power FET FEATURES • • • • • 420 50 TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN,	Original	EPB025A 12GHz EPB025A Low Noise High Gain	PDF
12GHz Abstract: EPB025A-70 Text: Excelics EPB025A-70 DATA SHEET Low Noise High Gain Heterojunction FET NF Ga P1dB G1dB PARAMETERS/TEST CONDITIONS Noise Figure Vds=2V, Ids=15mA Associated Gain Vds=2V, Ids=15mA Output Power at 1dB Compression Vds=3V, Ids=25mA Gain at 1dB Compression Vds=3V, Ids=25mA	Original	EPB025A-70 12GHz 18GHz 12GHz EPB025A-70	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF
EPA018A Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the	Original	EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C	PDF
EPA025A70 Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A Text: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB	Original	RTC/10/01/98 EPA080A 12GHz EPA060B EPA040A EPA025A V/15mA V/10mA EPA025A70 EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A	PDF
EPB018A5-70 Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580 Text: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180	Original	EPB018A5 3x180 320X290 EPB018A7 EPB018A9 EPB025A EPB018A5-70 EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580	PDF