EPB018A9 Search Results

EPB018A9 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EPB018A9		Excelics Semiconductor	4-5V high super low noise high gain heterojunction power FET		Original	PDF
EPB018A9		Excelics Semiconductor	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A9-70		Eon Silicon Solution	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A9-70		Excelics Semiconductor	Super Low Noise High Gain Heterojunction FET		Original	PDF

EPB018A9 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EFA018A Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70 Text: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20	Original	EPB018A5 EPB018A7 EPB018A9 EPB025A V/15mA EFA018A EFA025A EFA018A EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF
A970 Abstract: EPB018A7-70 igd 515 EPB018A5-70 EPB018A9-70 EPB018A9 A9-70 FET Text: Excelics EPB018A5/A7/A9-70 DATA SHEET Super Low Noise High Gain Heterojunction FET 6 6 ' • • • NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE	Original	EPB018A5/A7/A9-70 12GHz Compressio18 Rn/50 A970 EPB018A7-70 igd 515 EPB018A5-70 EPB018A9-70 EPB018A9 A9-70 FET	PDF
EPA025A70 Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A Text: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB	Original	RTC/10/01/98 EPA080A 12GHz EPA060B EPA040A EPA025A V/15mA V/10mA EPA025A70 EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A	PDF
EPB018A5 Abstract: AU 6378 Text: Excelics EPB018A5/A7/A9 DATA SHEET Super Low Noise High Gain Heterojunction FET • • • • • • VERY HIGH fmax: 120GHz TYPICAL 0.50~0.90dB NOISE FIGURE AND 12.0~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPB018A5/A7/A9 120GHz 12GHz EPB018A7 Rn/50 EPB018A5 AU 6378	PDF
EPB018A5-70 Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580 Text: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180	Original	EPB018A5 3x180 320X290 EPB018A7 EPB018A9 EPB025A EPB018A5-70 EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580	PDF