EPA240B100P Search Results

EPA240B100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EPA240B-100P		Excelics Semiconductor	Non-Hermetic 100 mil Package High Efficiency Heterojuction FETs		Original	PDF

EPA240B100P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF
AuSn eutectic Abstract: EPA240B100P 100MIL EPA240B-100P Text: EPA240B-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +32.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPA240B-100P 100MIL 12GHz 18GHz 710mA AuSn eutectic EPA240B100P EPA240B-100P	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.

Original

PDF

AuSn eutectic

Abstract: EPA240B100P 100MIL EPA240B-100P
Text: EPA240B-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +32.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION