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    EPA160AV Search Results

    EPA160AV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPA160AV Excelics Semiconductor High Efficiency Heterojunction Power FET Original PDF

    EPA160AV Datasheets Context Search

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    EPA160AV

    Abstract: EPA160A
    Text: EPA160A/EPA160AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


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    PDF EPA160A/EPA160AV EPA160A EPA160AV 18GHz EPA160AV) EPA160A

    EPA160AV

    Abstract: EPA160A
    Text: Excelics EPA160A/EPA160AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original
    PDF EPA160A/EPA160AV EPA160A EPA160AV 18GHz EPA160A 12GHz EPA160AV.

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


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    PDF

    EPA060A

    Abstract: EPA060AV EPA160AV
    Text: EPA060A/EPA060AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original
    PDF EPA060A/EPA060AV EPA060A EPA060AV 18GHz EPA160AV) EPA060A EPA160AV