EPA030B Search Results

EPA030B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EPA030B		Excelics Semiconductor	High Performance Heterojunction Dual-Gate FET		Original	PDF

EPA030B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EPA030B Abstract: No abstract text available Text: Excelics EPA030B PRELIMINARY DATA SHEET High Performance Heterojunction Dual-Gate FET • • • • • • • +18.0dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 300 MICRON RECESSED “MUSHROOM” DUAL GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING	Original	EPA030B 12GHz EPA030B	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

EPA030B

Abstract: No abstract text available
Text: Excelics EPA030B PRELIMINARY DATA SHEET High Performance Heterojunction Dual-Gate FET • • • • • • • +18.0dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 300 MICRON RECESSED “MUSHROOM” DUAL GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING

Original

EPA030B 12GHz EPA030B

PDF

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.