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    United Chemi-Con Inc EMVY500ADA470MF80G

    Cap Aluminum Lytic 47uF 50V 20% (6.3 X 7.7mm) SMD 170mA 1000h 105°C T/R Automotive AEC-Q200
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    Verical EMVY500ADA470MF80G 11,700 900
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    Onlinecomponents.com EMVY500ADA470MF80G 11,700
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    Master Electronics EMVY500ADA470MF80G 12,600
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    Chemi-Con EMVY500ADA470MF80G

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    Bristol Electronics EMVY500ADA470MF80G 825
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    TTI EMVY500ADA470MF80G Reel 119,700 900
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    Chemi-Con EMVY500ADA470MF80G+000

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    ComSIT USA EMVY500ADA470MF80G+000 948
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    EMVY500ADA470MF80G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EMVY500ADA470MF80G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 47UF 50V 20% SMD Original PDF

    EMVY500ADA470MF80G Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		PDF 100Vdc 63Vdc) 100Vdc) 120Hz) 822MMN0S EMVY500ADA1R0MD55G EMVY500ADA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G

    EMVY101ARA101MKE0S

    Abstract: EMVY160ARA102MKE0S EMVY350ADA470MF55G EMVY350ADA470 emvy500 EMVY101ARA680MKE EMVY350ARA471MKE0S EMVY500ADA221MJA0G 10MF EMVY6R3ADA220MD55G
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		PDF 100Vdc 63Vdc) 100Vdc) 120Hz) EMVY500ADA1R0MD55G EMVY500ADA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G EMVY500ADA100MF55G EMVY101ARA101MKE0S EMVY160ARA102MKE0S EMVY350ADA470MF55G EMVY350ADA470 emvy500 EMVY101ARA680MKE EMVY350ARA471MKE0S EMVY500ADA221MJA0G 10MF EMVY6R3ADA220MD55G

    JA02

    Abstract: EMVY101ARA680MKE EMVY350ADA100ME55G EMVY630ara221 JA-02 e55 f55 f61
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105℃ MZA ●Endurance : 1,000 to 5,000 hours at 105℃ ●Low impedance ●For digital equipment, especially DC-DC converters ●Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		PDF 100Vdc 63Vdc) 100Vdc) 120Hz) EMVY630ARA680MKE0S EMVY630ARA101MKE0S EMVY630ARA221MKE0S EMVY630DA221MLH0S EMVY630DA331MLH0S JA02 EMVY101ARA680MKE EMVY350ADA100ME55G EMVY630ara221 JA-02 e55 f55 f61

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 Nippon capacitors Nippon chemi

    k 2645 MOSFET

    Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    ATC100B101JT500XT

    Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with


    Original     		PDF MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 ATC100B101JT500XT T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22

    ATC100B9R1CT500XT

    Abstract: 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 ATC100B9R1CT500XT 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HSR3 Nippon capacitors

    UT-141A-TP

    Abstract: NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		PDF MRFE6P3300H MRFE6P3300HR3 UT-141A-TP NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-


    Original     		PDF MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3

    EMVY160ADA100MD55G

    Abstract: EMVY100ARA222MKG5S EMVY101SDA101MLH0S
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		PDF 100Vdc 63Vdc) 100Vdc) 120Hz) mi55G EMVY500ADA100MF55G EMVY500ADA220MF55G EMVY500ADA330MF80G EMVY500ADA470MF80G EMVY160ADA100MD55G EMVY100ARA222MKG5S EMVY101SDA101MLH0S

    JA02

    Abstract: EMVY160
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA lower Z MVZ @Expand up to F18 case size @Expand up to 100Vdc @Low impedance, 105C 1,000 to 5,000-hours-life @For digital equipment, especially DC-DC converters and VRM @Solvent-proof type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		PDF 100Vdc 000-hours-life 63Vdc) 100Vdc) 120Hz) EMVY500ADA4R7ME55G EMVY500ADA100MF55G EMVY500ADA220MF55G JA02 EMVY160

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6P9220H MRFE6P9220HR3

    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		PDF 100Vdc 63Vdc) 100Vdc) 120Hz) 822MMN0S EMVY500ADA1R0MD55G EMVY500ADA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G

    mvs 100

    Abstract: EKZH 1001N CE692 EMVE160ADA100MD55G EGPA250E562MM35S EMKB401ADA3R3MJA0G EKZH250E151MF11D e55 f55 f61 EKMA160
    Text: アルミ電解コンデンサ CAT.No.1001N 新しい品番体系に移行させて頂きました。 ホームページ上で新旧品番の照会をして頂くことができます。 こちらからアクセスして頂けます。 目 次 製品検索


    Original     		PDF 1001N mvs 100 EKZH 1001N CE692 EMVE160ADA100MD55G EGPA250E562MM35S EMKB401ADA3R3MJA0G EKZH250E151MF11D e55 f55 f61 EKMA160

    EMVY250SSS222MLN0S

    Abstract: EMVY6R3SSS682MLN0S JA02 EMVY250ADA 10MF EMVY6R3ADA220MD55G EMVY6R3ADA330ME55G EMVY350ADA4R7MD55G EMVY500ADA221MJA0G EMVY250ADA471MJA0G
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent-proof type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		PDF 100Vdc 63Vdc) 100Vdc) 120Hz) 10DA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G EMVY500ADA100MF55G EMVY500ADA220MF55G EMVY250SSS222MLN0S EMVY6R3SSS682MLN0S JA02 EMVY250ADA 10MF EMVY6R3ADA220MD55G EMVY6R3ADA330ME55G EMVY350ADA4R7MD55G EMVY500ADA221MJA0G EMVY250ADA471MJA0G

    Chemi-Con DATE CODES

    Abstract: chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 MRF6P9220HR3 Nippon chemi
    Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 Chemi-Con DATE CODES chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 Nippon chemi

    mvs 100

    Abstract: No809 EMVK160ADA220 EMKB401ADA3R3MJA0G EMVE500ADA101MHA0G EMVA630 103 SRM EMVK350ADA221MJA0G 1001N CE692
    Text: アルミ電解コンデンサ CAT.No.1001N 目 次 製品検索 製品一覧表 製品体系図 使用上の注意（アルミ非固体） 品番体系 環境対応 製品ガイド 包装仕様 テーピング仕様 チップ形はんだ付け推奨条件


    Original     		PDF 1001N 125ESR mvs 100 No809 EMVK160ADA220 EMKB401ADA3R3MJA0G EMVE500ADA101MHA0G EMVA630 103 SRM EMVK350ADA221MJA0G 1001N CE692

    kza series

    Abstract: NIPPON CHEMI-CON kmm Nippon chemicon KMC 820mf 450v 20B40 rectifier smd code nippon capacitor kmh 660.30 acid KZh Series TC04R
    Text: ALUMINUM ELECTROLYTIC CAPACITORS ALUMINUM ELECTROLYTIC CAPACITORS CAT. No. E1001K The current part numbering system is changed to new part numbering system. As to old and new part number, you can refer to our Internet website. INDEX SERIES TABLE PRODUCT SEARCH


    Original     		PDF E1001K kza series NIPPON CHEMI-CON kmm Nippon chemicon KMC 820mf 450v 20B40 rectifier smd code nippon capacitor kmh 660.30 acid KZh Series TC04R

    EMVY101ARA680MKE

    Abstract: emvy160ada101mf55g e55 f55 f61 EMVY350ADA470 emvy350ada100me55g EMVY500ADA101MHA0G EMVY350ADA101MHA0G EMVY6R3ADA101MF55G EMVY6R3ADA330ME55G EMVY6R3ADA331MF80G
    Text: 表面実装対応 面実装 ● 定格電圧 低Z 低 Z・縦形チップ部品（105℃） RoHS指令 適合品 耐洗浄 6.3 ~ 100V。 低Z化 6.3 ∼ 63Vdc 1,000 ∼ 5,000 時間。 DC-DC コンバータに最適。 ● 製品サイズ：φ 4 x 5.2L ∼φ 18 × 21.5L。


    Original     		PDF 63Vdc 363Vdc-4010580100Vdc 3100Vdc 120Hz 01CV3A D55F80 000F1 000F0 D55JA0 EMVY101ARA680MKE emvy160ada101mf55g e55 f55 f61 EMVY350ADA470 emvy350ada100me55g EMVY500ADA101MHA0G EMVY350ADA101MHA0G EMVY6R3ADA101MF55G EMVY6R3ADA330ME55G EMVY6R3ADA331MF80G