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    EMA11 Price and Stock

    ROHM Semiconductor EMA11T2R

    TRANS 2PNP PREBIAS 0.15W EMT5
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    Tripp Lite EMA113-10

    POWER DISTRIBUTION UNIT
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    Onlinecomponents.com EMA113-10
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    Tripp Lite EMA112-10

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    Tripp Lite EMA111-10

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    Tripp Lite EMA115-10

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    EMA11 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EMA11 ROHM Emitter common (dual digital transistor) Original PDF
    EMA110-130F Excelics Semiconductor MMIC Original PDF
    EMA112-SOT89 Excelics Semiconductor MMIC Original PDF
    EMA11T2R ROHM Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL PNP EMT5 Original PDF
    EMA11T2R ROHM TRANS DIGITAL BJT PNP 100MA 5EMT5 T/R Original PDF

    EMA11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A !External dimensions (Units : mm) !Features 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. 1.3 2.0 0.65 0.65


    Original     		PDF EMA11 UMA11N FMA11A DTA143Z UMA11N SC-88A

    EMA112-CP083

    Abstract: No abstract text available
    Text: EMA112-CP083 0.5 – 3.0 GHz High Linearity Power MMIC ISSUED 11/27/2006 Features • • • • 0.5 – 3.0 Ghz Bandwidth 28.0dBm Typical Output Power at 1dB Compression 15.0 dB Typical Small Signal Gain Single Bias Supply Caution! ESD sensitive device.


    Original     		PDF EMA112-CP083 10MHz, 18dBm EMA112-CP083

    Untitled

    Abstract: No abstract text available
    Text: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. (3) 0.22 (4)


    Original     		PDF EMA11 UMA11N FMA11A DTA143Z EMA11 UMA11N

    Untitled

    Abstract: No abstract text available
    Text: EMA110-CP083 0.5 – 3.0 GHz High Linearity Power MMIC ISSUED 01/10/2007 Features • • • • 0.5 – 3.0 Ghz Bandwidth 26.5dBm Typical Output Power at 1dB Compression 11.0 dB Typical Small Signal Gain Single Bias Supply EMA 110 Caution! ESD sensitive device.


    Original     		PDF EMA110-CP083 10MHz, 17dBm

    700UM

    Abstract: No abstract text available
    Text: EMA110 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 11/11/2004 FEATURES • • • • • • 0.5 – 3.0 GHz BANDWIDTH 27.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 17dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED Dimension: 760um X 700um


    Original     		PDF EMA110 -45dBc 17dBm 760um 700um 10MHz, 16dBm 700UM

    EMA11

    Abstract: DTA143Z FMA11A T148 UMA11N
    Text: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. (3) 0.22 (4)


    Original     		PDF EMA11 UMA11N FMA11A DTA143Z EMA11 UMA11N FMA11A T148

    DTA143Z

    Abstract: EMA11 FMA11A T148 UMA11N
    Text: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. (3) 0.22 (4)


    Original     		PDF EMA11 UMA11N FMA11A DTA143Z EMA11 UMA11N -50m-100m FMA11A T148

    700um

    Abstract: No abstract text available
    Text: EMA110 0.5 – 3.0 GHz High Linearity Power MMIC FEATURES • • • • • • 0.5 – 3.0 GHz BANDWIDTH 27.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 17dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED Dimension: 760um X 700um


    Original     		PDF EMA110 -45dBc 17dBm 760um 700um 10MHz, 16dBm 700um

    Untitled

    Abstract: No abstract text available
    Text: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A zExternal dimensions (Unit : mm) zFeatures 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. (3) 0.22 (4)


    Original     		PDF EMA11 UMA11N FMA11A DTA143Z EMA11 UMA11N

    DTA143Z

    Abstract: EMA11 FMA11A T148 UMA11N
    Text: EMA11 / UMA11N / FMA11A Transistors Emitter common dual digital transistors EMA11 / UMA11N / FMA11A !External dimensions (Units : mm) !Features 1) Two DTA143Z chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. 1.3 2.0 0.65 0.65


    Original     		PDF EMA11 UMA11N FMA11A DTA143Z UMA11N SC-88A FMA11A T148

    EMA112-SOT89

    Abstract: pt 35c
    Text: EMA112-SOT89 PRELIMINARY DATA SHEET 0.5-3.0 GHz High Linearity Power MMIC ISSUED DATE: 02-09-04 FEATURES • • • • • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE 0.5-3.0 GHz BANDWIDTH +28.0dBm TYPICAL OUTPUT POWER 41dBm OIP3 15.0dB TYPICAL POWER GAIN


    Original     		PDF EMA112-SOT89 41dBm 10MHz, 18dBm 1000pF 100pF EMA112-SOT89 pt 35c

    EMA110-130F

    Abstract: 2.4g
    Text: EMA110-130F 0.5 – 3.0 GHz High Linearity Power MMIC UPDATED 08/10/2005 FEATURES • • • • • • • 0.5 – 3.0 GHz BANDWIDTH 27.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 17dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED


    Original     		PDF EMA110-130F -45dBc 17dBm EMA110 -130F 10MHz, EMA110-130F 2.4g

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    resistor

    Abstract: PEMD4 PEMD13 Cross Reference resistor cross reference EMA8 PEMB10 PEMD6 NL17SZ02XV5T2 NL17SZ07XV5T2
    Text: SOT5xx Cross Reference LOGIC MiniG LCX OVT Logic MiniGates ON ~ ~ ~ ~ NL17SZ00XV5T2 2 Input NAND 463B TC7SZ00AFE ~ ~ ~ ~ NL17SZ02XV5T2 2 Input NOR 463B TC7SZ02AFE ~ ~ ~ ~ NL17SZ04XV5T2 Single Inverter 463B TC7SZ04AFE ~ ~ ~ ~ NL17SZU04XV5T2 Unbuffered Inverter


    Original     		PDF NL17SZ00XV5T2 TC7SZ00AFE NL17SZ02XV5T2 TC7SZ02AFE NL17SZ04XV5T2 TC7SZ04AFE NL17SZU04XV5T2 TC7SZU04AFE NL17SZ06XV5T2 NL17SZ07XV5T2 resistor PEMD4 PEMD13 Cross Reference resistor cross reference EMA8 PEMB10 PEMD6 NL17SZ02XV5T2 NL17SZ07XV5T2

    Untitled

    Abstract: No abstract text available
    Text: 44 PM PM2329 ClassiPI Network Classification Processor Datasheet ur sd ay ,0 3N ClassiPI ov em be r, 20 05 09 :0 0: PM2329 Datasheet ad ed by C on te n tT ea m of Pa r tm in er In co n Th Network Classification Processor Issue 5, November 2005 Copyright 2005 PMC-SIerra, Inc. All rights reserved


    Original     		PDF PM2329 PM2329 PMC-2010146, 35x35 PM2329-BGC PM2329-BC

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    EMA8

    Abstract: EMA11 IDT82V2608
    Text: INVERSE MULTIPLEXING FOR ATM IDT82V2608 Version July 25, 2003 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • • FAX: (408) 492-8674 Printed in U.S.A. 2003 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance


    Original     		PDF IDT82V2608 BB208) 82V2608 EMA8 EMA11 IDT82V2608

    motorola g18 gsm datasheet

    Abstract: "Base Station Controller" A9 RX TX EMA8 IMA machine working circuit diagram motorola g18 gsm TS27 EMA11 IDT82V2616 rsf-11
    Text: INVERSE MULTIPLEXING FOR ATM IDT82V2616 Version - 2 December 8, 2003 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • • FAX: (408) 492-8674 Printed in U.S.A. 2003 Integrated Device Technology, Inc. DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance


    Original     		PDF IDT82V2616 BB260) 82V2616 motorola g18 gsm datasheet "Base Station Controller" A9 RX TX EMA8 IMA machine working circuit diagram motorola g18 gsm TS27 EMA11 IDT82V2616 rsf-11

    Untitled

    Abstract: No abstract text available
    Text: E-Series Plug-In Mixer 10 - 2000 MHz EMA-11MH V3.00 Features ● ● R-1 LO Power: +13 dBm Up to +9 dBm RF Specifications @ 25°C Frequency Range RF LO IF 10 - 2000 MHz 10 - 2000 MHz DC - 600 MHz Conversion Loss dB 20 - 1000 MHz 10 - 2000 MHz Typical 7.0


    Original     		PDF EMA-11MH EMA-11MH EMA-11MHTR

    EMA11

    Abstract: IDT82V2608
    Text: INVERSE MULTIPLEXING FOR ATM IDT82V2608 Version - 4 December 4, 2006 6024 Silver Creek Valley Road, San Jose, CA 95138 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 284-2775 Printed in U.S.A. 2006 Integrated Device Technology, Inc. DISCLAIMER


    Original     		PDF IDT82V2608 BB208) 82V2608 EMA11 IDT82V2608

    OCDS1

    Abstract: No abstract text available
    Text: 16 AM PM2329 ClassiPI Network Classification Processor Datasheet eb 8F Fr id ay ,1 ClassiPI ru ar y, 20 05 12 :4 1: PM2329 Datasheet oa de d by C on te n tT ea m of Pa rtm in er In co n Network Classification Processor Proprietary and Confidential Issue 4, November 2001


    Original     		PDF PM2329 PMC-2010146, C-2010146, OCDS1

    ET1-6T-SM20

    Abstract: relay sm1 ET-1 24X1 EMS500X1 ETT1-6-SM21 EMD-108 EMS-500 relay et1 SPLITTER-COMBINER
    Text: Low Cost E-Series RF Mixers Freq. Range (LO-RF MHz) LO Power (dBm) RF Power Up To (dBm) 0.05-200 0.1-250 0.04-400 0.1-500 0.5-500 0.5-500 0.5-500 0.5-500 1-500 1-500 2-500 2-500 2-590 5-800 5-500 1-600 2-600 1-750 890-915 1-1000 1-1000 5-1000 5-1000 5-1000


    OCR Scan     		PDF 5-1-SM20 5-1-SM21 ET1-1-SM20 ET1-1-SM21 ETM01-1 ET1-6T-SM20 relay sm1 ET-1 24X1 EMS500X1 ETT1-6-SM21 EMD-108 EMS-500 relay et1 SPLITTER-COMBINER

    Untitled

    Abstract: No abstract text available
    Text: Afa Æ aa n A M P c< o m p a n y E-Series Plug-In Mixer 10-2000 MHz R-1 Features • 1.0 Pow er: +13 dB m • U p to +9 d B m RF NOTE : PIN NUMBERS DO NOT APPEAR ON UNIT. FOR REFERENCE ONLY. LE T T E R S *EC" OVER PIN 2 Specifications @ 2 5 ° c Frequency Range


    OCR Scan     		PDF

    g3c 6 pin

    Abstract: No abstract text available
    Text: E-Series Plug-In Mixer 1 0 -3 0 0 0 MHz EMA-11H R-1 Features • +17 dBm LO Power • Up to +10 dBm RF T C .3'0 MAX Specifications @ 25 C Frequency Range RF, LO IF I 0 G3C ± 0 00b 0 76 ± 13 DIA. 8 PLACES 10-3 000 MHz 10-1 000 MHz ODD COLORED BEAD: P IN 4


    OCR Scan     		PDF EMA-11H g3c 6 pin