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    P0903BDG

    Abstract: p0903bd p0903 ELM32424LA-S
    Text: Single N-channel MOSFET ELM32424LA-S •General description ■Features ELM32424LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=50A Rds(on) < 9.5mΩ (Vgs=10V) Rds(on) < 16mΩ (Vgs=4.5V)


    Original     		PDF ELM32424LA-S ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG p0903bd p0903

    ELM32424LA

    Abstract: ELM32424LA-S
    Text: 单 N 沟道 MOSFET ELM32424LA-S •概要 ■特点 ELM32424LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=50A ·Rds on < 9.5mΩ (Vgs=10V) ·Rds(on) < 16mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		PDF ELM32424LA-S P0903BDG O-252 SEP-24-2004 ELM32424LA ELM32424LA-S

    P0903BDG

    Abstract: ELM32424LA-S p0903bd p0903b
    Text: シングル N チャンネル MOSFET ELM32424LA-S •概要 ■特長 ELM32424LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=50A ・ Rds on < 9.5mΩ (Vgs=10V) ・ Rds(on) < 16mΩ (Vgs=4.5V)


    Original     		PDF ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG ELM32424LA-S p0903bd p0903b

    P0903BDG

    Abstract: ELM32424LA-S
    Text: Single N-channel MOSFET ELM32424LA-S •General description ■Features ELM32424LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=50A Rds(on) < 9.5mΩ (Vgs=10V) Rds(on) < 16mΩ (Vgs=4.5V)


    Original     		PDF ELM32424LA-S ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG