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    ELECTRON DETECTOR 42 Search Results

    ELECTRON DETECTOR 42 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    ELECTRON DETECTOR 42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron


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    PDF S11141 S11142 S11141: S11142: SE-171 KSPD1080E01

    Untitled

    Abstract: No abstract text available
    Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron


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    PDF S11141 S11142 S11141: S11142: SE-171 KSPD1080E01

    electron Detector

    Abstract: S11142 United Detector silicon photodiode electron electron gun SE-171
    Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron


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    PDF S11141 S11142 S11141: S11142: SE-171 KSPD1080E01 electron Detector S11142 United Detector silicon photodiode electron electron gun

    Untitled

    Abstract: No abstract text available
    Text: Agilent 8500 FE-SEM Compact System for Low-Voltage, High-Performance Imaging Data Sheet Features and Benefits Overview • Resolution and imaging equal to that of conventional FE-SEMs The new Agilent 8500 FE-SEM offers researchers a field emission scanning


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    PDF Miniature0800 5990-6183EN

    circuit diagram blood gas analyzer

    Abstract: Light Detector laser
    Text: CHAPTER 14 APPLICATIONS Photomultiplier tubes PMTs are extensively used as photodetectors in fields such as chemical analysis, medical diagnosis, scientific research and industrial measurement. This chapter introduces major applications of photomultiplier tubes and describes the principle and


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    Electron Multipliers

    Abstract: No abstract text available
    Text: PRODUCT LINE-UP Electron multipliers are mainly used as positive/negative ion detectors. They are also useful for detecting and measuring vacuum UV rays and soft X-rays. Hamamatsu electron multipliers have a high gain multiplication factor yet low dark current, allowing


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    PDF R4146-10 R6985-80 R8811 R2362 R5150-10 SE-164 TPMH1354E01 B1201 Electron Multipliers

    proton rx 4000 watts power amplifier circuit diagram

    Abstract: Hamamatsu r300 0812E H5783
    Text: PHOTOMULTIPLIER TUBES Basics and Applications THIRD EDITION Edition 3a PHOTON IS OUR BUSINESS 2007 HAMAMATSU PHOTONICS K. K. ▲ Photomultiplier Tubes ▲ Photomultiplier Tube Modules © 2007 HAMAMATSU PHOTONICS K. K. Introduction Light detection technolgy is a powerful tool that provides deeper understanding of more sophisticated


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    PDF OTH9001E03a proton rx 4000 watts power amplifier circuit diagram Hamamatsu r300 0812E H5783

    transistor C3866

    Abstract: C3866 C3866* transistor c3866 transistor C3866 FE M7824 FE P C3866 FE P C3866 17 R5509-42 pmt divider circuit
    Text: LOW-LIGHT-LEVEL NIR NEAR INFRARED:1.4µm/1.7µm MEASUREMENT PHOTOMULTIPLIER TUBES R5509-42/R5509-72 IN THE NIR with EXCLUSIVE COOLERS APPLICATION EXAMPLE: Photoluminescence measurement Sample 1 SAMPLE TEMPERATURE Sample structure: InAlAs/InGaAs (SQWs)/InP(sub)


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    PDF R5509-42/R5509-72 SE-171-41 TPMH1267E02 transistor C3866 C3866 C3866* transistor c3866 transistor C3866 FE M7824 FE P C3866 FE P C3866 17 R5509-42 pmt divider circuit

    Untitled

    Abstract: No abstract text available
    Text: NIR NEAR INFRARED PHOTOMULTIPLIER TUBES R5509-42,-72 PATENT PENDING For NIR (to 1.4 µm, to 1.7 µm) Fast time response, High sensitivity Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R5509-42 and -72 have newly developed photocathodes with extended spectral response ranges to 1.4 µm or 1.7 µm


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    PDF R5509-42 S-164-40 TPMH1185E02

    carbon monoxide detector

    Abstract: electrochemical sensor CO gas sensor CO "Co Sensor" carbon monoxide sensor carbon monoxide sensor electrochemical NGL07 D3162 Capteur Sensors NGL07 electrochemical gas sensors datasheet
    Text: General information on the Capteur NGL07 Carbon Monoxide sensors Principle of Operation The Capteur ‘G’ series sensor is a Mixed Metal Oxide semiconductor based on Chromium Titanium Oxide. When heated to a high temperature the material behaves towards reducing gases as a p-type semiconductor and increases in


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    PDF NGL07 carbon monoxide detector electrochemical sensor CO gas sensor CO "Co Sensor" carbon monoxide sensor carbon monoxide sensor electrochemical D3162 Capteur Sensors NGL07 electrochemical gas sensors datasheet

    R7600-M64

    Abstract: S10362-11-100C circuit diagram of a laser lighter
    Text: NEWS 02 2008 SOLID STATE PRODUCTS PAGE 9 New Si PIN photodiodes S10783 and S10784 SOLID STATE PRODUCTS Red LED for POF Data Communications PAGE 10 ELECTRON TUBE PRODUCTS 75W Xenon Lamp Series PAGE 28 SYSTEMS PRODUCTS Cooled CCD Camera ORCA-R2 PAGE 38 Highlights


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    PDF S10783 S10784 P2211 DE128228814 R7600-M64 S10362-11-100C circuit diagram of a laser lighter

    C30902S

    Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
    Text: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip


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    PDF C30902E C30902E, C30902S, C30921E, C30921S C30902S geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S

    scintillator

    Abstract: TP191
    Text: TP-191 Bipolar Time of Flight Detector Start Up Procedure Unpacking Your Bipolar Time Of Flight Detector The Bipolar Time of Flight detector contains contamination sensitive components and therefore must be handled with care. The following procedure should be followed in


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    PDF TP-191 TP191/JUN00 scintillator TP191

    TH2067-3

    Abstract: s band klystron 10 GHz klystron VA Thales 2157 th391 th 2067.3 2173F s band klystron 45 MW klystron s band klystron th
    Text: SCIENCE INDUSTRIAL ACCELERATORS The best RF solution for industrial processing HIGH PERFORMANCE, HIGH RELIABILITY, EASY TO USE T hales Electron Devices’ to meet customers’ changing klystrons and grid tubes requirements and provide the exact for industrial accelerators reflect


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    S11108

    Abstract: C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar
    Text: NEWS 02 2009 LASER PRODUCTS PAGE 08 Gas detection: New Quantum Cascade Infrared Lasers SOLID STATE PRODUCTS PAGE 18 Infrared LED L10822, L10822-01, L10823, L10823-01 ELECTRON TUBE PRODUCTS PAGE 37 Flat panel PMT assemblies H10966A-100/H10966B-100 SYSTEMS PRODUCTS


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    PDF L10822, L10822-01, L10823, L10823-01 H10966A-100/H10966B-100 C11079-01 S11108 C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar

    F9890-13

    Abstract: F9890-14 F9892-13 F9892-14 vaccum tube
    Text: NEW MCP ASSEMBLY F9890-13/-14, F9892-13/-14 HIGH TIME RESOLUTION TOF-MS DETECTOR ANODE GROUND TYPE FEATURES ●Anode GND type for MALDI TOF-MS ●Fast time response ●Large effective area F9890-13/-14 F9892-13/-14 27 mm 42 mm ●Excellent MCP flatness ●Robust MCP


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    PDF F9890-13/-14, F9892-13/-14 F9890-13/-14 F9892-14) TMCPB0099EA F9890-13/-14 F9892-13/-14 F9892-13/-14) SE-171-41 F9890-13 F9890-14 F9892-13 F9892-14 vaccum tube

    Untitled

    Abstract: No abstract text available
    Text: NEW MCP ASSEMBLY F9892-21/-22 HIGH TIME RESOLUTION TOF-MS DETECTOR HIGH VOLTAGE FLOATING OPERATION FEATURES ●High voltage floating operation MCP-IN ± 10 kV ●Fast time response ●Large effective area 42 mm ●Excellent MCP flatness ●Robust MCP ●Less ringing


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    PDF F9892-21/-22 F9892-22) F9892-21/-22 TMCPB0103EA SE-171-41 TMCP1037E01

    DME2050-222

    Abstract: No abstract text available
    Text: FEATURE ARTICLE PAGE 1 • FEBRUARY 2009 www.mpdigest.com Schottky Diodes by Rick Cory, Skyworks Solutions, Inc. RS = series resistance, Ω ISAT = saturation current, A n = ideality factor typically 1.0 and Introduction chottky diodes have been used for several decades


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    PDF APN1014: DME2050-222

    C30902EH

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This


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    PDF C30902 C30902EH C30921EH DTS0408

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO DIODE NEC NDL1202 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 0 0 0 nm.


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    PDF NDL1202 NDL1202 tj427S2S 19S7M

    5082-4360

    Abstract: PHOTO COUPLER
    Text: NEC PHOTO COUPLER ELECTRON DEVICE PS2007B HIGH SPEED PHOTO COUPLER -N E PO C S ER IES — DESCRIPTION The PS2007B is a high speed photo coupler containing a GaAsP lig h t e m ittin g diode and an integrated detector consisting o f a photodiode and a high gain linear am p lifie r th a t drives a scho ttky clamped open collector o u tp u t


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    PDF PS2007B PS2007B 6IM137 5082-4360 PHOTO COUPLER

    Untitled

    Abstract: No abstract text available
    Text: KA 92 20 C RF AMP + SSP IN T R O D U C T IO N The KA9220C is an 1-Chip BICMOS integrated circuit to perform the lunction ol RF AMP and SSP Servo Signal Processor lor Compact disc player applications. It consists ol RF signal processing, locus servo, tracking servo,


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    PDF KA9220C

    126LNS

    Abstract: PD6102G SE303A 126LNS-6285Z uPC1474HA uPC1475HA signal detection circuit "peak hold" constant vol remote IC NEC MPD1943G mpc1474
    Text: N E C ELECTRONICS INC 3GE D • L.4S7SS5 0030234 Ô ■ Y -ll-ll D ATA SHEET NEC BIPOLAR ANALOG INTEGRATED CIRCUIT ELECTRON DEVICE / ¿ P C 1 4 7 4 H A , / ¿ P C 1 4 7 5 H A REMOTE CONTROL PREAM PLIFIER DESCRIPTION The /¿PC1474HA and ¿¿PC1475HA are silicon monolithic integrated circuit designed for remote control preamplifica­


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    PDF uPC1474HA uPC1475HA LiPC1474HA juPC1475HA PC1474HA PC1475HA jliPC147 126LNS PD6102G SE303A 126LNS-6285Z signal detection circuit "peak hold" constant vol remote IC NEC MPD1943G mpc1474

    AVERAGE QUASI PEAK AND PEAK DETECTOR

    Abstract: nixie tube circuit
    Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction


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