Hitachi DSA00164
Abstract: Nippon capacitors
Text: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword x 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M × 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword × 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M × 4 Components) ADE-203-736B (Z)
|
Original
|
HB56U832
HB56U432
HB56U832B/SB
32-bit,
HB56U432B/SB
ADE-203-736B
16-Mbit
HM5117405)
Hitachi DSA00164
Nippon capacitors
|
PDF
|
HB56H232 Series
Abstract: Hitachi DSA00164 Nippon capacitors
Text: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword x 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M × 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword × 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M × 16 Components) ADE-203-700C (Z)
|
Original
|
HB56H232
HB56H132
HB56H232B/SB
32-bit,
HB56H132B/SB
ADE-203-700C
16-Mbit
HM5118165)
HB56H232 Series
Hitachi DSA00164
Nippon capacitors
|
PDF
|
simm EDO 72pin
Abstract: simm 72pin HB56U832B-5N HB56U832B-5NL HB56U832B-6N HB56U832B-7N 20XXXh Hitachi DSA00196 Nippon capacitors
Text: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword x 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M × 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword × 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M × 4 Components) ADE-203-736B (Z)
|
Original
|
HB56U832
HB56U432
HB56U832B/SB
32-bit,
HB56U432B/SB
ADE-203-736B
16-Mbit
HM5117405)
simm EDO 72pin
simm 72pin
HB56U832B-5N
HB56U832B-5NL
HB56U832B-6N
HB56U832B-7N
20XXXh
Hitachi DSA00196
Nippon capacitors
|
PDF
|
Nippon capacitors
Abstract: No abstract text available
Text: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword x 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M × 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword × 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M × 16 Components) ADE-203-700C (Z)
|
Original
|
HB56H232
HB56H132
HB56H232B/SB
32-bit,
HB56H132B/SB
ADE-203-700C
16-Mbit
HM5118165)
Nippon capacitors
|
PDF
|
Nippon capacitors
Abstract: No abstract text available
Text: HB56E836/HB56E436 Series HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword x 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M × 4 and 8 pcs of 4 M × 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword × 36-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M × 4 and 4 pcs of 4 M × 1 Components)
|
Original
|
HB56E836/HB56E436
HB56E836
36-bit,
HB56E436
ADE-203-673A
HB56E836
16-Mbit
HM5117405)
HM514105)
Nippon capacitors
|
PDF
|
Hitachi DSA00164
Abstract: Nippon capacitors
Text: HB56E836/HB56E436 Series HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword x 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M × 4 and 8 pcs of 4 M × 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword × 36-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M × 4 and 4 pcs of 4 M × 1 Components)
|
Original
|
HB56E836/HB56E436
HB56E836
36-bit,
HB56E436
ADE-203-673A
HB56E836
16-Mbit
HM5117405)
HM514105)
Hitachi DSA00164
Nippon capacitors
|
PDF
|
HMD4M36M9EA
Abstract: HMD4M36M9EAG HMD4M36M9EG
Text: HANBit HMD4M36M9EG, HMD4M36M9EA 16Mbyte 4Mx36 72-pin SIMM, EDO with Parity Mode, 2K/4K Ref. 5V Part No. HMD4M36M9EG , HMD4M36M9EAG GENERAL DESCRIPTION The HMD4M36M9EG is a 4M x 36 bit dynamic RAM high-density memory module. The module HMD4M36M8E consists
|
Original
|
HMD4M36M9EG,
HMD4M36M9EA
16Mbyte
4Mx36)
72-pin
HMD4M36M9EG
HMD4M36M9EAG
HMD4M36M9EG
HMD4M36M8E
24-pin
HMD4M36M9EA
HMD4M36M9EAG
|
PDF
|
gigabyte 945
Abstract: D0-35 30 pin 9-bit simm memory
Text: Enhanced Memory Systems Inc. Features DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Architecture The DM512K36ST6 achieves 512K x 36 density by mounting five 512K x 8 EDRAMs, packaged in 44-pin plastic TSOP-II packages, on a
|
Original
|
DM512K32ST6/DM512K36ST6
512Kb
32/512Kb
DM512K36ST6
44-pin
DM2213
DM512K32
DM512K36ST6
gigabyte 945
D0-35
30 pin 9-bit simm memory
|
PDF
|
D0-35
Abstract: DM224
Text: DM2M36SJ6/DM2M32SJ6 Multibank EDO 2Mbx36/2Mbx32 Enhanced DRAM SIMM Enhanced Memory Systems Inc. Product Specification Features Architecture The DM2M36SJ6 achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on both sides of the multi-layer
|
Original
|
DM2M36SJ6/DM2M32SJ6
2Mbx36/2Mbx32
DM2M36SJ6
28-pin
DM2242
DM2252
DM2M32SJ6
16KByte
DM2M36SJ
D0-35
DM224
|
PDF
|
D0-35
Abstract: u327
Text: Enhanced Memory Systems Inc. DM1M36SJ6/DM1M32SJ6 Multibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2242
|
Original
|
DM1M36SJ6/DM1M32SJ6
1Mbx36/1Mbx32
DM1M36SJ
28-pin
DM2242
DM2252
DM1M32SJ6
DM1M36SJ6
D0-35
u327
|
PDF
|
HYM532814
Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .
|
OCR Scan
|
HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
1Mx32
2Mx32
HYM532814
TRA8 L
HYM536410
HYM532100AM
HYM532100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword X 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components) HITACHI
|
OCR Scan
|
HB56U832
HB56U432
HB56U832B/SB
32-bit,
HB56U432B/SB
ADE-203-736B
16-Mbit
HM5117405)
|
PDF
|
Nippon capacitors
Abstract: No abstract text available
Text: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword X 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components) HITACHI
|
OCR Scan
|
HB56U832
HB56U432
HB56U832B/SB
32-bit,
HB56U432B/SB
ADE-203-736B
16-Mbit
HM5117405)
Nippon capacitors
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI
|
OCR Scan
|
HB56H232
HB56H132
HB56H232B/SB
32-bit,
HB56H132B/SB
ADE-203-700C
16-Mbit
HM5118165)
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: HB56E836/HB56E436 Series HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M x 4 and 4 pcs of 4 M x 1 Components)
|
OCR Scan
|
HB56E836/HB56E436
HB56E836
36-bit,
HB56E436
ADE-203-673A
HB56E836
16-Mbit
HM5117405)
HM514105)
|
PDF
|
5116405
Abstract: Nippon capacitors
Text: H B 5 6 E 8 3 6 / H B 5 6 E 4 3 6 S e r i e s HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module
|
OCR Scan
|
HB56E836
36-bit,
HB56E436
ADE-203-673A
16-Mbit
HM5117405)
HM514105)
5116405
Nippon capacitors
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Enhanced IVfemoiy Systems be. DM 1M36SJ6/DM1M32SJ6 M ultibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mbx36 density by mounting nine1Mbx4EDRAMs, packaged in 28-pin plastic 90U packages, on a multi
|
OCR Scan
|
1M36SJ6/DM1M32SJ6
1Mbx36/1Mbx32
DM1M36SJ
1Mbx36
28-pin
DM2242
DM2252
DM1M32SJ6
DM1M36SJ6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Enhanced DM2M36SJ6/DM2M32SJ6 Multibank EDO 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Systems Inc. Product Specification Features Architecture SVM The DM2M36SJ5 achieves 2Mb x 36 density by mounti ng 181 Mb x 4 EDRAMs, packaged in 28-pin plastic 90Upackages,
|
OCR Scan
|
DM2M36SJ6/DM2M32SJ6
2Mbx36/2Mbx32
DM2M36SJ5
28-pin
90Upackages,
DM2242
DM2252
DM2M32SJ6
16KByte
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMART” SM 5320280U2XUUU Modular Technologies November 19, 1996 8MByte 2M x 32 DRAM Module - 2Mx8 based 72-pin SIMM Features Part Numbers Standard Non-JEDEC Configuration Non-parity Access Time 60/70/80ns Operation Mode FPM /EDO Operating Voltage 3.3/5.0V
|
OCR Scan
|
72-pin
60/70/80ns
300/400mil
P-7-382486-2
P-822019-4
P-822110-3
5320280U2XUUU
SM532028002XUUU
SM532028012XUUU
SM532028082XUUU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IITSU February 1997 Revision 1.0 data sheet ESA2UN321 1/4 -(60/70)(J/T)(G/S)-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN321(1/4)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3211 supports
|
OCR Scan
|
ESA2UN321
32bits,
72-pin,
ESA2UN3211
ESA2UN3214
MB811
72-pin
144-pin
168-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Enhanced IVfemoiy Systems Inc. DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four stive s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page
|
OCR Scan
|
DM512K32ST6/DM512K36ST6
512Kb
32/512Kb
512K36ST6-
|
PDF
|
SM50H
Abstract: dh 321 HYM321005S Q67100-Q2062 Q67100-Q2063
Text: SIEMENS HYM 321005S/GS-50/-60 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version Advanced Information • SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications • Fast access and cycle time 50 ns access time
|
OCR Scan
|
32-Bit
321005S/GS-50/-60
L-SIM-72-10
GLS05833
SM50H
dh 321
HYM321005S
Q67100-Q2062
Q67100-Q2063
|
PDF
|
TRAL110
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet ESA2UN321 1/4 B-60(J/T)(G/S)-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN321 (1/4)B-60(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3211B supports
|
OCR Scan
|
ESA2UN321(
ESA2UN321
32bits,
72-pin,
ESA2UN3211B
ESA2UN3214B
1605B-60PJ
1Mx16,
TRAL110
|
PDF
|
A0LA
Abstract: No abstract text available
Text: n E n h a n c e d Memory Systems Inc. DM1M36SJ&DM1M32SJ6Multibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multi
|
OCR Scan
|
|
PDF
|