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    DIODE SCHOTTKY 40V 2A DO214AC
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    EC21QS04 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EC21QS04 Nihon Inter Electronics Schottky Barrier Diode Original PDF
    EC21QS04 Nihon Inter Electronics 40 V, diode Original PDF

    EC21QS04 Datasheets Context Search

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    EC21QS04

    Abstract: No abstract text available
    Text: SBD Type : EC21QS04 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly


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    PDF EC21QS04 100Volts EC21QS04

    Untitled

    Abstract: No abstract text available
    Text: SBD Type:EC21QS04 EC21QS04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings


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    PDF TypeEC21QS04 EC21QS04

    INVERTER 1A 12V

    Abstract: capacitor 22uF Si9410DY 12v inverter 6d28 MAX1856 EC21QS04 22uF 10v 12V to 5V
    Text: 01/05/00 +12V to -5V at 400mA . This uses the MAX1856, an inductor, and a capacitor to make a charge pump inverter. D1 2A 40V EC21QS04 +12V INPUT C1 10uF 25V L1 6uH CDRH 6D28-6R0 9 VCC 10 SYNC/ SHDN\ C2 0.1uF EXT 4 R2 0.05 C3 1uF C4 0.22uF R3 20k U1PGND MAX1856 5


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    PDF 400mA MAX1856, EC21QS04 6D28-6R0 MAX1856 Si9410DY 1000pF INVERTER 1A 12V capacitor 22uF 12v inverter 6d28 EC21QS04 22uF 10v 12V to 5V

    EC21QS04

    Abstract: No abstract text available
    Text: SBD Type : EC21QS04 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly


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    PDF EC21QS04 100Volts EC21QS04

    Untitled

    Abstract: No abstract text available
    Text: SBD Type : EC21QS04 OUTLINE DRAWING FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly


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    PDF EC21QS04 100Volts

    Untitled

    Abstract: No abstract text available
    Text: SBD Type:EC21QS04 EC21QS04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings


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    PDF TypeEC21QS04 EC21QS04

    Untitled

    Abstract: No abstract text available
    Text: SBD Type:EC21QS04 EC21QS04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings


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    PDF TypeEC21QS04 EC21QS04

    Untitled

    Abstract: No abstract text available
    Text: 40 Volts 2A Avg. EC21QS04 SBD •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 40 平 均 整 流 電 流 Average Rectified Forward Current IO 実


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    PDF EC21QS04 20mVRMS, 100kHz,

    EC21QS04

    Abstract: No abstract text available
    Text: 2A Avg. 40 Volts SBD EC21QS04 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 40 平 均 整 流 電 流 Average Rectified Forward Current IO 実


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    PDF EC21QS04 20mVRMS, 100kHz, EC21QS04

    1n58xx

    Abstract: EC21QS03 1N5817 1N5818 1N914 ADP3050 ADP3050-5 ADP3050AR ADP3050AR-5 CD73
    Text: a FEATURES Wide Input Voltage Range: 3.6 V to 30 V Adjustable and Fixed 3.3 V, 5 V Output Options Integrated 1 A Power Switch Uses Small Surface-Mount Components Cycle-By-Cycle Current Limiting Peak Input Voltage (100 ms): 60 V Thermally Enhanced 8-Lead SOIC Package


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    PDF ADP3050 200kHz C00125 1n58xx EC21QS03 1N5817 1N5818 1N914 ADP3050 ADP3050-5 ADP3050AR ADP3050AR-5 CD73

    CDRH5D16-4R7

    Abstract: GRM31MR61A106K 1A 60V SCHOTTKY diode toshiba EC31QS06 fb6 inductance high power white led driver circuit diagram LED driver INDUCTOR CDRH8D28-4R7 MAX8790 SI3458DV SIX
    Text: 19-0658; Rev 0; 11/06 KIT ATION EVALU E L B A AVAIL Six-String White LED Driver with Active Current Balancing for LCD Panel Applications The MAX8790 is a high-efficiency driver for white lightemitting diodes LEDs . It is designed for large liquidcrystal displays (LCDs) that employ an array of LEDs as


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    PDF MAX8790 CDRH5D16-4R7 GRM31MR61A106K 1A 60V SCHOTTKY diode toshiba EC31QS06 fb6 inductance high power white led driver circuit diagram LED driver INDUCTOR CDRH8D28-4R7 SI3458DV SIX

    1N58XX

    Abstract: EC21QS03 ADP3050-3.3 1N5817 1N5818 1N914 ADP3050 ADP3050-5 ADP3050AR ADP3050AR-5
    Text: a FEATURES Wide Input Voltage Range: 3.6 V to 30 V Adjustable and Fixed 3.3 V, 5 V Output Options Integrated 1 A Power Switch Uses Small Surface-Mount Components Cycle-By-Cycle Current Limiting Peak Input Voltage (100 ms): 60 V Thermally Enhanced 8-Lead SOIC Package


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    PDF ADP3050 200kHz C3451 1N58XX EC21QS03 ADP3050-3.3 1N5817 1N5818 1N914 ADP3050 ADP3050-5 ADP3050AR ADP3050AR-5

    3PHA 20

    Abstract: 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra
    Text: マーキング仕様 MARKING STANDARD 日本インターの一般用整流素子は,次表に示す仕様で製品型名などがマークされます。 1. AXIAL LEAD TYPE 2. CHIP TYPE/SOD-123 TYPE 適用素子名 Device Type No. マーキング仕様


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    PDF TYPE/SOD-123 10DDA EP05DA EP05DA40 10JDA 10EDA 10EDB EC10DS 3PHA 20 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra

    diode e 1210

    Abstract: GRM188R71H104K
    Text: PAM2846 EVB User Guide PAM2846 EV Board User Guide AE Department 1. Revision Information Date 2008/3/26 Revision V2.0 Description Initial Release Comment 2. EV Board Schematic VIN 1 C1 10uF L1 2 22uH C6 1uF 1 D1 2 C5 10uF R2 1M ENA ENA PWM VIN U1 SW SW SW


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    PDF PAM2846 PAM2846 100nF diode e 1210 GRM188R71H104K

    SANYO 1000uF 16V CA

    Abstract: SANYO 220uF 16V 220UF 16V 220uF 16V Electrolytic Capacitor 220uf 16v capacitor 150pf ceramic capacitor 220uF/16v electrolytic capacitor 0401 transistor 47uf, 16v electrolytic capacitor 6930A
    Text: WLL Terminal C4 1uF 10V 24V INPUT C3 4.7uF 35V 13 R1 130k C1 22nF 2 C6 220uF 35V CA D1 CMPSH-3 20 VP ILIM 19 VL BST COMP DH 17 16 C2 220pF C7 4.7uF 35V T1 1:1:2 Lpri = 22.8uH VP2-0116 18 LX C5 0.1uF N1A 1/2 NDS 6930A R3 4.7 11,12 DL VL GND U1 MAX1865T R2 100k


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    PDF 220uF 220pF VP2-0116 MAX1865T 1000uF 800mA EC21QS06 KSH30 SANYO 1000uF 16V CA SANYO 220uF 16V 220UF 16V 220uF 16V Electrolytic Capacitor 220uf 16v capacitor 150pf ceramic capacitor 220uF/16v electrolytic capacitor 0401 transistor 47uf, 16v electrolytic capacitor 6930A

    diode smd ED 74

    Abstract: 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR
    Text: 目录 二极管—电磁干扰及电源的效率 —————————— 参考 整流杂波 ———————————————— 有3个系列的SBD ——————————————— SBD和热失控 ————————————————


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    PDF O-220 O-247 O-247 aSn-37Pb bSn-37Pb diode smd ED 74 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR

    FCH20U10

    Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


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    PDF OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 FCH20U10 niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045

    Untitled

    Abstract: No abstract text available
    Text: 19-4589; Rev 0; 4/09 MAX17105 Evaluation Kit/Evaluation System The MAX17105 evaluation system EV system consists of the MAX17105 evaluation kit (EV kit) and the Maxim CMAXQUSB+ command module. Windows 2000/XP and Windows Vista®-compatible software is also available for


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    PDF MAX17105 2000/XP MAX17105EVCMAXQU+ MAX17105

    30V 20A 10KHz power MOSFET

    Abstract: IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100
    Text: 目录 二极管是功率半导体的基础 1 二极管的构造标记、基本特性 1 一般整流二极管和高速二极管 2 确认二极管的基本特性的实验—试着测量正向特性和反向特性 2 ( 正 向电力损耗 )加上( 反 向电力损耗 ) — 使 用PN二极管时我们可以


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    PDF AC100/ 0QY03 EP10HY03 EP10LA03 EP10QY03 OD-123 200270/W EP10HA03 30V 20A 10KHz power MOSFET IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100

    sony flyback transformer

    Abstract: smps repair circuit ultrasonic transducers 48V sony flyback transformer datasheet fast recovery diode 600v 5A Ultrasonic Cleaning Transducer FCH10A15 sony flyback FAST RECOVERY DIODE 200ns 8A 40V FAST RECOVERY DIODE 200ns
    Text: TABLE of CONTENTS Diode — EMI and Efficiency————–—————————– Rectification Noise—————————————————— 3 series of SBD———————————————————— SBD and Thermal Runaway——————————————


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    PDF

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode 1 Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


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    PDF

    PT76S16

    Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
    Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


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    31DF2 diode

    Abstract: mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice
    Text: 트랜지스터 기술 2004년 8월호 제1장 원고 파워 다이오드의 기본 특성 및 선정 전류 다이오드는 파워 반도체의 기본 파워 전력용 반도체에 흘려보낼 수 있는 전류 는 일반적으로 1A 이상입니다. 가장 기본적인


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    PDF 2004/Sept. AC100/ 50/60Hz DC12V 10kHz OD-123 100/W 200/W 270/W 300/W 31DF2 diode mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice

    508RP

    Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
    Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


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    PDF