Untitled
Abstract: No abstract text available
Text: Toggles Series EB TYPICAL SWITCH Pushbuttons Rockers EB20 11 B J23 C Contacts, Ratings, & Terminals Poles & Circuits 11 SPDT ON ON 65 SPDT ON ON 61 DPDT ON (ON) 85 DPDT ON ON ( ) = Momentary No Code Silver Contacts; Solder Lug Terminals 3A @ 125V AC Cap Colors
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AT465
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FES2J
Abstract: FES1J w5 marking MARKING w5 J4 marking code EA marking code MARKING U1
Text: Surface Mount Fast Recovery Rectifiers Part No. RS2A RS2B RS2D RS2G RS2J RS2K FRS2A FRS2B FRS2D FRS2G FRS2J FRS2K FRS2M RS3A RS3B RS3D RS3G RS3J RS3K FRS3A FRS3B FRS3D FRS3G FRS3J FRS3K FRS3M Marking Code RA RB RD RG RJ RK G1 G2 G3 G4 G5 G6 G7 RA RB RD RG
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-65oC
150oC
FES2J
FES1J
w5 marking
MARKING w5
J4 marking code
EA marking code
MARKING U1
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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2PG002
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d Features Code TO-220F-A1
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2002/95/EC)
2PG002
O-220F-A1
2PG002
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2pg001
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d Features Code TO-220F-A1
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2002/95/EC)
2PG001
O-220F-A1
2pg001
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2pg003
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d Features Code TO-220F-A1
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2002/95/EC)
2PG003
O-220F-A1
2pg003
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sealing cap
Abstract: CC 0201 K R kemet 7867
Text: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and
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EIA481-1.
IEC60286-6
sealing cap
CC 0201 K R
kemet 7867
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Untitled
Abstract: No abstract text available
Text: ゐ 同 一- T H I R DA N G L EP R O J E C T I O NI CAPACITANCE 1 D IMENS IONS ITEM CODE ※ ※ ※ ヰ I;>i( L I;>i( T I ; > i ( H F 1/，'/~ ECQV 1103JM310.01 (103)17.513.217.0 l1123JM310.012 (123)1 1 1 1153JM3 10.015 (153) 1 1 1183JM3 1O . 018 ( 183) 1
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l1123JM310
11393JM3
11823JM3
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EB smd code marking tantalum capacitor
Abstract: capacitor SMD 476 35v SMD ka3 SMD 1206 ka3 IEC-286-6 BME MLCC KA3 smd code
Text: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and
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EIA481-1.
IEC60286-6
EIA-198
EB smd code marking tantalum capacitor
capacitor SMD 476 35v
SMD ka3
SMD 1206 ka3
IEC-286-6
BME MLCC
KA3 smd code
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Untitled
Abstract: No abstract text available
Text: THIRD ANGLE PROJECTION I … A LTERATION 1 S S U E I ムI G IRATED lVOLTAGE ECQE61020 FZ 630VDC I161220FZI 1 / J"61520FZI 1 / 1 61820FZI 1 / H62220FZI 1 1 H62720FZI 1 1 1163320FZI 1 1 H63920FZI 1 1 M64720FZI 1 / f165620FZI 1 1 H66820FZI 1 / H68220FZI 1 1 ITEM CODE
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ECQE61020
630VDC
I161220FZI
61520FZI
61820FZI
H62220FZI
H62720FZI
1163320FZI
H63920FZI
M64720FZI
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Untitled
Abstract: No abstract text available
Text: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and
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PDF
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EIA481-1.
IEC60286-6
EIA-198
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UHF transistor GHz
Abstract: BFG93AW DD44 pa 4010
Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold m etallization ensures excellent reliability. BFG93AW/X
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BFG93AW
BFG93AW/X;
BFG93AW/XR
OT343
OT343R
BFG93AW/X
BFG93AW/XR
BFG93AW
BFG93AW/X
UHF transistor GHz
DD44
pa 4010
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transistor marking MTs ghz
Abstract: transistor marking P8 UHF transistor GHz Xr 1075 BFG92AW D032 y1010
Text: Product specification Philips Semiconductors B FG 92A W B FG 92A W /X; B F G 92A W /X R NPN 6 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW • Gold metallization ensures excellent reliability.
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BFG92AW
BFG92AW/X;
BFG92AW/XR
OT343
OT343R
BFG92AW/X
BFG92AW/XR
BFG92AW
BFG92AW/X
transistor marking MTs ghz
transistor marking P8
UHF transistor GHz
Xr 1075
D032
y1010
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-em itter saturation voltage • C om plem entary type: SM BT 2222A NPN Type Marking Ordering Code Pin Configuration SM BT 2907A s2F Q 68000-A6474
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68000-A6474
OT-23
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transistor d2118
Abstract: D2118 D2118 transistor
Text: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D2118-*Q, where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.3 V for
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2SD2118F5
SC-63)
D2118-
2SD2118F5
transistor d2118
D2118
D2118 transistor
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transistor Bf 966
Abstract: No abstract text available
Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration 1= B Q62702-F1519 2=E II CO RBs o BF 771W
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OT-323
Q62702-F1519
150it
transistor Bf 966
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFQ 75 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA. • Complementary type: BFQ 72 NPN . ESD. Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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Q62702-F803
023SbDS
DDb717fl
BFQ75
fl23Sb05
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mw 772
Abstract: 12L marking
Text: SIEMENS BF 772 NPN Silicon RF Transistor • For application in TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration RAs Q62702-F1222 1 =C 2= E Package 3=B II Marking BF 772 LU Type SOT-143
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Q62702-F1222
OT-143
mw 772
12L marking
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2 G H z at collector currents from 0.5mA to 20mA E S P: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Q62702-F938
OT-23
IS21el2
IS21/S12I
0S35b05
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702 Z TRANSISTOR
Abstract: BF 981 transistor Bf 981 Q62702-F1250 BF 145 transistor marking LG transistor Bf 979
Text: SIEMENS BF 775A NPN Silicon R F Transistor • E sp ecially suitable for amplifiers and T V-sat tuners E S P : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration B F 775A LG s Q62.702-F1250 1 =B
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702-F1250
IS21e
1S21/S
702 Z TRANSISTOR
BF 981
transistor Bf 981
Q62702-F1250
BF 145 transistor
marking LG
transistor Bf 979
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Untitled
Abstract: No abstract text available
Text: Transistor, NPN 2SD1782K Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1782K; AJ-fr, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB =0.5 A/50 mA • high breakdown voltage BV qeo =
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2SD1782K
SC-59)
2SD1782K;
2SB1198K
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transistors BC 457
Abstract: BC 458 BC 459 transistors BC 458 transistors BC 458 pnp ic 807 marking 5cs bc 457 5Bs sot-23
Text: SIEMENS PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfiguration
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Q62702-C1735
Q62702-C1689
Q62702-C1721
Q62702-C1736
Q62702-C1504
Q62702-C1692
OT-23
cur100
transistors BC 457
BC 458
BC 459
transistors BC 458
transistors BC 458 pnp
ic 807
marking 5cs
bc 457
5Bs sot-23
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IMBT4403
Abstract: IMBT4401 IMBT2222 6u sot-23 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Text: DIODES INC 32E » • 20407^3 00003b3 S H D I I SURFACE M O U N T TRA N SISTO RS -r^-oo, NPN T R A N S IS T O R S -T O -2 3 6 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) Type N u m b er M a rk in g Code IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222
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-TO-236
OT-23)
IMBT3903
IMBT3904
IMBT4400
IMBT4401
IMBT2222
IMBT2222A
10/mA
BC807-16
IMBT4403
6u sot-23
BC817-16
BC817-25
BC817-40
BC846A
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