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    E5 MOSFET Search Results

    E5 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    E5 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E5 marking

    Abstract: Si2335DS
    Text: Si2335DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2335DS (E5)*


    Original     		PDF Si2335DS O-236 OT-23) S-02303--Rev. 23-Oct-00 E5 marking

    Untitled

    Abstract: No abstract text available
    Text: Si2335DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2335DS (E5)*


    Original     		PDF Si2335DS O-236 OT-23) 18-Jul-08

    E5 marking

    Abstract: Si2335DS E5* MARKING
    Text: Si2335DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2335DS (E5)*


    Original     		PDF Si2335DS O-236 OT-23) 08-Apr-05 E5 marking E5* MARKING

    semikron skiip 31 nab 12 T 18

    Abstract: No abstract text available
    Text: SKHI 61 R . Absolute Maximum Ratings Symbol Conditions L*, '4,1> B*1.-@2 ,6/+-6> I3,4. 7/@3-1 B*1.-@2 &4.,4. ,2-C )46623. &4.,4. -B26-@2 )46623. EL- ; ¥< U$H %-WQ 7]/.)=/3@ 562^423)> E$J? S _3MH $*112).*6 2+/.26 B*1.-@2 72372 -)6*77 .=2 IJKL E5*6 FTZZ9(IJKL7H


    Original     		PDF 43A26B 6/B26 A4127 /3B26 A6/B27N semikron skiip 31 nab 12 T 18

    Untitled

    Abstract: No abstract text available
    Text: SKHI 21A R . Absolute Maximum Ratings Symbol Conditions R^954&5 R^9KK4&5 b9H1M?HB)( /9? ,H?BI '9B1@J( ?%&4O E5?H1 )&J5@B '9B1O 8D&J2: +H1?H1 ?(@L >H%%(51 +H1?H1 @'(%@J( >H%%(51 4@YO )0&1>2&5J K%([H(5>I G9BB(>19% (4&11(% '9B1@J( )(5)( @>%9) 12( E^_/ R@1( 9K %&)( @5$ K@BB 9K '9B1@J( )(>95$@%I


    Original     		PDF A91194

    MBRM120T3

    Abstract: 68uF 10V SANYO 47pF 50V NPO CR16-3162FM SILICONIX Si9801DY MMSD914T1 EEFUEOG181R BD 1206 CR16-303JM r025
    Text: A B C D E 4 4 E2 SYNC/FCB E3 RUN/SS R1 100K E4 +VIN C1 68uF,10V POSCAP R2 0.025 1206 2.8V to 8.5V + C2 47pF E5 GND 1 3 5 2 4 6 HEADER 3X2 1.8V 2.5V 3.3V VIN 8 5 VFB TG 7 BG 6 GND 4 R8 71.5K 1% C7 100pF 2 E6 +VOUT 1.5V/1.8V/2.5V/3.3V 2.5Aavg/3Apk 4 Q2A Opt.


    Original     		PDF SI9801 SI6801 MBRM120T3 LTC1773MS10 100pF MMSD914T1 CDRH6D28-3R0 MBRM120T3 68uF 10V SANYO 47pF 50V NPO CR16-3162FM SILICONIX Si9801DY MMSD914T1 EEFUEOG181R BD 1206 CR16-303JM r025

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 MW6S010

    MW6S010NR1

    Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1

    flyback 150W schematic diagram

    Abstract: HV Flyback TRANSFORMERS CAPACITOR 106v flyback transformer hv hv flyback transformer DC102 schematic diagram pv pwm Charge controller Switching power supply Schematic Diagram N-Channel MOSFET HV Flyback schematic E7 Charging circuit diagram
    Text: DEMO MANUAL DC102 50V N-CHANNEL HALF BRIDGE LT1336 Half-Bridge N-Channel Power MOSFET Driver with Boost/Flyback Regulator U DESCRIPTIO This demonstration circuit is an N-channel half-bridge for general purpose applications. The half-bridge can be driven with TTL/CMOS level signals into an LT 1336, which


    Original     		PDF DC102 LT1336 PC-401 DM102A 434-0507q flyback 150W schematic diagram HV Flyback TRANSFORMERS CAPACITOR 106v flyback transformer hv hv flyback transformer DC102 schematic diagram pv pwm Charge controller Switching power supply Schematic Diagram N-Channel MOSFET HV Flyback schematic E7 Charging circuit diagram

    CRCW12061001F100

    Abstract: MW6S010NR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 CRCW12061001F100 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1

    MRF6V2300N

    Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2300N MRF6V2300NB MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22

    hatching machine

    Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications


    Original     		PDF MRF6V2150N MRF6V2150NB MRF6V2150N hatching machine MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 7, 12/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications


    Original     		PDF MRF6V2150N MRF6V2150NB

    MRF6V2300NB

    Abstract: transistor A113 MRF6V2300N
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 5, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2300N MRF6V2300NB transistor A113

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4150 Product Description The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15 dBm LO


    Original     		PDF PE4150 PE4150

    PDM5001

    Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
    Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH


    Original     		PDF C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16

    E5 MOSFET

    Abstract: code z5
    Text: 4 x 3.5 mm MOSFET BGA Package Dimensions 4 x 3.5 mm FS PKG Code Z5 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0824 4.00±0.15 0.30 INDEX SLOT GATE CL CL 1 2 4 3 5 6 A SOURCE B 0.65


    Original     		PDF

    A113

    Abstract: MRF9060MBR1 MRF9060MR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1 MRF9060MR1 A113 MRF9060MBR1

    AN1955

    Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR
    Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF5S9070NR1/D MRF5S9070NR1 AN1955 MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR

    655E-6

    Abstract: fp45n ppm pspice 136E3 518E-7
    Text: H A R R RFG45N06 RFP45N06 I S S E M I C O N D U C T O R January 1994 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging JEDEC TO-220AB TOP VIEW • 45A,60V • rDS(ON) ~ 0.028U • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFG45N06 RFP45N06 O-220AB O-247 RFG45N06, FP45N06 15E-5) 25E-9 1E-30 12E-3 655E-6 fp45n ppm pspice 136E3 518E-7

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 45A,60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 26E-3 90E-6 07E-9 72E-8) 93E-1 13E-4TRS2

    Untitled

    Abstract: No abstract text available
    Text: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,


    OCR Scan     		PDF RFD8P06LESM, RFP8P06LE 0-300i2 1-800-4-HARRIS

    TC227

    Abstract: TC1327 IF9220
    Text: Hormis S IRFR9220, IRFU9220 S em icon du cto r y 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs September 1998 Description Features 3.6A, 200V r DS ON These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava­


    OCR Scan     		PDF IRFR9220, IRFU9220 05e-3 28e-5) 170e-12 1e-30 10TOX 73e-6) 95e-3 TC227 TC1327 IF9220

    Untitled

    Abstract: No abstract text available
    Text: RFD3055, RFD3055SM, RFP3055 Semiconductor Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs File Number 3648.2 Features • 12A, 60V These are N-Channel enhancem ent mode silicon gate • rDS ON = 0.150i2 power field effect transistors. They are advanced power


    OCR Scan     		PDF RFD3055, RFD3055SM, RFP3055 150i2