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TDK Corporation CGA2B2X7R1E153M050BD CAP CER 0.015UF 25V 0402 EPOXY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGA2B2X7R1E153M050BD	Cut Tape	7,845		1	1 $0.13 10 $0.074 100 $0.0442 1000 $0.0288 10000 $0.02256	Buy Now
TDK Corporation C1005X7R1E153M CAP CER 0.015UF 25V X7R 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C1005X7R1E153M	Cut Tape	7,258		1	1 $0.1 10 $0.058 100 $0.0342 1000 $0.01922 10000 $0.01292	Buy Now
	C1005X7R1E153M	Digi-Reel	7,258		1	1 $0.1 10 $0.058 100 $0.0342 1000 $0.01922 10000 $0.01292	Buy Now
TDK Corporation CGA2B3X8R1E153K050BD CAP CER 0.015UF 25V 0402 EPOXY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGA2B3X8R1E153K050BD	Digi-Reel	6,460		1	1 $0.24 10 $0.138 100 $0.0855 1000 $0.05775 10000 $0.0465	Buy Now
	CGA2B3X8R1E153K050BD	Cut Tape	6,460		1	1 $0.24 10 $0.138 100 $0.0855 1000 $0.05775 10000 $0.0465	Buy Now
TDK Corporation C2012X5R2E153M125AA CAP CER 0.015UF 250V X5R 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C2012X5R2E153M125AA	Cut Tape	1,794		1	1 $0.19 10 $0.11 100 $0.0676 1000 $0.04509 10000 $0.04509	Buy Now
TDK Corporation FA26NP02E153JNU06 CAP CER 0.015UF 250V NP0 RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FA26NP02E153JNU06	Cut Tape	1,783		1	1 $1.3 10 $0.81 100 $0.553 1000 $0.41621 10000 $0.41621	Buy Now

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E153 Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF
E-153	Semitec	Current regulative diode	Original	PDF
E-153	International Semiconductor	DIODE CURRENT REG. 25V 18MA 2DO-35	Scan	PDF
E-153	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
E15-30	Fran Mar International	Input voltage 36-72 VDCoutput voltage 3.3 VDCoutput current:150/3000 mAinput current 15 mA/271 mA 15 W wide input DC to DC converter	Scan	PDF
E15-31	Fran Mar International	Input voltage 36-72 VDCoutput voltage 5 VDCoutput current:150/3000 mAinput current 15 mA/391 mA 15 W wide input DC to DC converter	Scan	PDF
E15-32	Fran Mar International	Input voltage 36-72 VDCoutput voltage 12 VDCoutput current:65/1250 mAinput current 15 mA/377 mA 15 W wide input DC to DC converter	Scan	PDF
E1532S.38.03	General Cable	Multiple Conductor Cables, Cables, Wires, 2C/12 SBC UNSH TYPE FPLR	Original	PDF
E1532S.41.03	General Cable	Multiple Conductor Cables, Cables, Wires, CABLE 2COND 12AWG UNSHIELD 1000'	Original	PDF
E1532S.44.03	General Cable	Multiple Conductor Cables, Cables, Wires, 2C/12 SBC UNSH TYPE FPLR	Original	PDF
E1532S.46.03	General Cable	Multiple Conductor Cables, Cables, Wires, 2C/12 SBC UNSH TYPE FPLR	Original	PDF
E15-33	Fran Mar International	Input voltage 36-72 VDCoutput voltage 15 VDCoutput current:50/1000 mAinput current 15 mA/377 mA 15 W wide input DC to DC converter	Scan	PDF
E15-34	Fran Mar International	Input voltage 36-72 VDCoutput voltage ±5 VDCoutput current:±75/±1500 mAinput current 20 mA/381 mA 15 W wide input DC to DC converter	Scan	PDF
E1534S.38.03	General Cable	Multiple Conductor Cables, Cables, Wires, 4C/12 SBC UNSH TYPE FPLR	Original	PDF
E1534S.41.03	General Cable	Multiple Conductor Cables, Cables, Wires, 4C/12 SBC UNSH TYPE FPLR	Original	PDF

E15-35	Fran Mar International	Input voltage 36-72 VDCoutput voltage ±12 VDCoutput current:±35/±625 mAinput current 20 mA/377 mA 15 W wide input DC to DC converter	Scan	PDF
E15-36	Fran Mar International	Input voltage 36-72 VDCoutput voltage ±15 VDCoutput current:±25/±500 mAinput current 20 mA/377 mA 15 W wide input DC to DC converter	Scan	PDF
E153C	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
E153D	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

E153 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
35N120D1 Abstract: D-68623 IXER 35N120D1 Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	PDF	35N120D1 247TM E153432 35N120D1 D-68623 IXER 35N120D1
TO247AD Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247 Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions	Original	PDF	40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
DSEC29 Abstract: DSEC 29 DSEC Text: HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC	Original	PDF	59-06BC ISOPLUS220TM E153432 29-06B DS98817A DSEC29 DSEC 29 DSEC
IXGN400N60B3 Abstract: No abstract text available Text: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600	Original	PDF	IXGN400N60B3 OT-227B, E153432 IC110 400N60B3 IXGN400N60B3
Mosfet 75V 120A Abstract: Power Mosfet 75V 120A IXFN240N15T2 Text: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	PDF	IXFN240N15T2 140ns OT-227 E153432 240N15T2 Mosfet 75V 120A Power Mosfet 75V 120A IXFN240N15T2
IXFN520N075T2 Abstract: No abstract text available Text: Preliminary Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C	Original	PDF	IXFN520N075T2 OT-227 E153432 520N075T2 IXFN520N075T2
IXGN320N60A3 Abstract: No abstract text available Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A IXGN320N60A3
IXFN320N17T2 Abstract: ixfn320n 320N17T2 Text: Advance Technical Information IXFN320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 260A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	PDF	IXFN320N17T2 150ns OT-227 E153432 320N17T2 IXFN320N17T2 ixfn320n
ixfn420n10t Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16 Text: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	PDF	IXFN420N10T 140ns OT-227 E153432 420N10T ixfn420n10t 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16
IXGN200N60B3 Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16 Text: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGN200N60B3 IC110 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B3 9V DC INPUT and gate ic IGBT 100V 100A igbt 100a 150v SOT227B 123B16
IXGJ50N60C4D1 Abstract: G50N60 Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	PDF	IXGJ50N60C4D1 IC110 O-247TM E153432 IC110 IF110 50N60C4 0-06-11-A IXGJ50N60C4D1 G50N60
IXTN17N120L Abstract: No abstract text available Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	PDF	IXTN17N120L OT-227 E153432 17N120L IXTN17N120L
E1531A Abstract: No abstract text available Text: PDFINFO H2 4 0 1 - 0 1 8-Channel Voltage Output SCP HP E1531A Technical Specifications ● ● ● ● Use with HP E1415A and HP E1419A 8-channel non-isolated voltage source Current limited to protect from short circuits Source ± 16 V at up to 5 mA output current	Original	PDF	E1531A E1415A E1419A E1531A E1415A 5966-2401E
Untitled Abstract: No abstract text available Text: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	PDF	IXGN120N60A3 IXGN120N60A3D1 IC110 OT-227B, E153432 IF110 2x61-06A

55N120D1 Abstract: No abstract text available Text: IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G E G E E IXDN 55N120 Preliminary Data E IXDN 55N120 D1 miniBLOC, SOT-227 B E153432 E Symbol Conditions	Original	PDF	55N120 55N120 OT-227 E153432 IXDN55N120 D-68623 55N120D1
Untitled Abstract: No abstract text available Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C	Original	PDF	IXXN110N65B4H1 10-30kHz IC110 OT-227B, E153432 IF110 110N65B4H1 02-04-13-B
Untitled Abstract: No abstract text available Text: Advance Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 455A Ω 1.65mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C	Original	PDF	IXFN520N075T2 OT-227 E153432 520N075T2
E1406A Abstract: data acquisition and control system 82341C DAC1000 82341D E1421B E2120E pentium 66 Text: PDFINFO H8 6 4 1 - 0 1 HP DAC1000 Data Acquisition and Control System Technical Specifications ● ● ● ● ● ● Test system which combines VXI instrument modules HP E1419A Multifunctionplus with 32-channel analog input HP E1421B 6-slot mainframe HP E1531A 8-channel analog output	Original	PDF	DAC1000 E1419A 32-channel E1421B E1531A E1533A 16-channel E1406A data acquisition and control system 82341C 82341D E2120E pentium 66
Untitled Abstract: No abstract text available Text: PDFINFO H2 4 0 7 - 0 1 8-Bit Isolated Digital I/O SCP HP E1536A Technical Specifications ● ● ● ● Use with HP E1415A and HP E1419A 8 TTL input/output lines isolated to 56 Vdc Programmable threshold levels of 5 V, 12 V, 24 V, or 48 V Programmable debounce timer	Original	PDF	E1536A E1415A E1419A E1536A 5966-2407E
80N60 Abstract: No abstract text available Text: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFR80N60P3 250ns ISOPLUS247 E153432 80N60P3 80N60
IXFN44N80Q3 Abstract: No abstract text available Text: Preliminary Technical Information IXFN44N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = = ≤ ≤ 800V 37A Ω 190mΩ 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings	Original	PDF	IXFN44N80Q3 300ns E153432 44N80Q3 IXFN44N80Q3
IXXN100N60B3H1 Abstract: No abstract text available Text: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C	Original	PDF	10-30kHz IXXN100N60B3H1 150ns IF110 100N60B3 12-01-11-B IXXN100N60B3H1
Untitled Abstract: No abstract text available Text: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings	Original	PDF	IXTJ6N150 O-247TM E153432 100ms 6N150
IXFN62N80Q3 Abstract: sot 123 Text: Advance Technical Information IXFN62N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 800V 49A Ω 140mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFN62N80Q3 300ns E153432 62N80Q3 IXFN62N80Q3 sot 123

E153 Search Results

E153 Price and Stock

TDK Corporation CGA2B2X7R1E153M050BD

TDK Corporation C1005X7R1E153M

TDK Corporation CGA2B3X8R1E153K050BD

TDK Corporation C2012X5R2E153M125AA

TDK Corporation FA26NP02E153JNU06

E153 Datasheets (18)

E153 Datasheets Context Search

35N120D1

TO247AD

DSEC29

IXGN400N60B3

Mosfet 75V 120A

IXFN520N075T2

IXGN320N60A3

IXFN320N17T2

ixfn420n10t

IXGN200N60B3

IXGJ50N60C4D1

IXTN17N120L

E1531A

Untitled

55N120D1

Untitled

Untitled

E1406A

Untitled

80N60

IXFN44N80Q3

IXXN100N60B3H1

Untitled

IXFN62N80Q3