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    DYNAMIC RAM NMOS 4164 Search Results

    DYNAMIC RAM NMOS 4164 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    DYNAMIC RAM NMOS 4164 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMJ4164-15FGS

    Abstract: MKB4564P-82 qml-38535 MARKING BEA MT4264EC-15 8201006EA CQCC3-N18 am9064 smj4164-12fgs
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Added vendor CAGE 01295 with device types 04 - 07 complete revision. 7 Oct 83 N. A. Hauck B Added vendor CAGE 34335 to device types 01, 02, 03, 06, and 07. Added device types 08, 09, 10. Device types 04 and 05 not available


    Original     		PDF 6Y440 5962-R157-96. 3V146 F8385 F-38120, 3V146 SMJ4164-15FGS MKB4564P-82 qml-38535 MARKING BEA MT4264EC-15 8201006EA CQCC3-N18 am9064 smj4164-12fgs

    TMS4464

    Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
    Text: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure


    Original     		PDF SMYD002 o184-464PP-142M iS-146 TMS4464 TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500

    CMOS Single Chip 8-Bit Microcontrollers

    Abstract: transistor WT4 uart 8051 115200 WT21 80C51 EMV2000 ISO7816 PLCC52 SSOP24 T83C5121
    Text: Features • 80C51 Core • • • • • • • • • • • • • • • • • • • – 12 or 6 Clocks per Instruction X1 and X2 Modes – 256 Bytes Scratchpad RAM – Dual Data Pointer – Two 16-bit Timer/Counters: T0 and T1 T83C5121 with 16 Kbytes Mask ROM


    Original     		PDF 80C51 16-bit T83C5121 T85C5121 T89C5121 4164B CMOS Single Chip 8-Bit Microcontrollers transistor WT4 uart 8051 115200 WT21 EMV2000 ISO7816 PLCC52 SSOP24

    CMOS Single Chip 8-Bit Microcontrollers

    Abstract: three phase SCR gate drive circuit PLCC52 "pin compatible" 4164D
    Text: Features • 80C51 Core • • • • • • • • • • • • • • • • • • • – 12 or 6 Clocks per Instruction X1 and X2 Modes – 256 Bytes Scratchpad RAM – Dual Data Pointer – Two 16-bit Timer/Counters: T0 and T1 T83C5121 with 16 Kbytes Mask ROM


    Original     		PDF 80C51 16-bit T83C5121 T85C5121 T89C5121 EMV2000, 4164D CMOS Single Chip 8-Bit Microcontrollers three phase SCR gate drive circuit PLCC52 "pin compatible"

    4164c

    Abstract: CMOS Single Chip 8-Bit Microcontrollers transistor WT4 WT21 80C51 ISO7816 PLCC52 SSOP24 T83C5121 T85C5121
    Text: Features • 80C51 Core • • • • • • • • • • • • • • • • • • • – 12 or 6 Clocks per Instruction X1 and X2 Modes – 256 Bytes Scratchpad RAM – Dual Data Pointer – Two 16-bit Timer/Counters: T0 and T1 T83C5121 with 16 Kbytes Mask ROM


    Original     		PDF 80C51 16-bit T83C5121 T85C5121 T89C5121 4164C CMOS Single Chip 8-Bit Microcontrollers transistor WT4 WT21 ISO7816 PLCC52 SSOP24

    CMOS Single Chip 8-Bit Microcontrollers

    Abstract: 83c512
    Text: Features • 80C51 Core • • • • • • • • • • • • • • • • • • • – 12 or 6 Clocks per Instruction X1 and X2 Modes – 256 Bytes Scratchpad RAM – Dual Data Pointer – Two 16-bit Timer/Counters: T0 and T1 T83C5121 with 16 Kbytes Mask ROM


    Original     		PDF 80C51 16-bit T83C5121 T85C5121 T89C5121 EMV2000, 4164F CMOS Single Chip 8-Bit Microcontrollers 83c512

    CMOS Single Chip 8-Bit Microcontrollers

    Abstract: AT89C5121-ICSUL WT21 transistor WT4 80C51 EMV2000 ISO7816 PLCC52 qfn32 tray SSOP24
    Text: Features • 80C51 Core • • • • • • • • • • • • • • • • • • • – 12 or 6 Clocks per Instruction X1 and X2 Modes – 256 Bytes Scratchpad RAM – Dual Data Pointer – Two 16-bit Timer/Counters: T0 and T1 T83C5121 with 16 Kbytes Mask ROM


    Original     		PDF 80C51 16-bit T83C5121 T85C5121 T89C5121 4164G CMOS Single Chip 8-Bit Microcontrollers AT89C5121-ICSUL WT21 transistor WT4 EMV2000 ISO7816 PLCC52 qfn32 tray SSOP24

    uart 8051 115200

    Abstract: iso7816 sim tcon 102 CMOS Single Chip 8-Bit Microcontrollers transistor WT6 WT21 transistor WT4 4164E 83c512
    Text: Features • 80C51 Core • • • • • • • • • • • • • • • • • • • – 12 or 6 Clocks per Instruction X1 and X2 Modes – 256 Bytes Scratchpad RAM – Dual Data Pointer – Two 16-bit Timer/Counters: T0 and T1 T83C5121 with 16 Kbytes Mask ROM


    Original     		PDF 80C51 16-bit T83C5121 T85C5121 T89C5121 4164D uart 8051 115200 iso7816 sim tcon 102 CMOS Single Chip 8-Bit Microcontrollers transistor WT6 WT21 transistor WT4 4164E 83c512

    TSMC 0.18 um MOSfet

    Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
    Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes


    Original     		PDF QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221

    KM4164B-12

    Abstract: samsung hv capacitor KM4164B-10 NMOS DRAM KM4164B-15 KM4164B KM4164BP KM4164 Samsung Tantalum Capacitor TCP KM4164B10
    Text: KM4164B NMOS DRAM 6 4 K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran­ dom A ccess M em ory organized as 65,536 one-bit words. The design is op tim ized fo r high speed, high pe rfor­


    OCR Scan     		PDF KM4164B KM4164B-10 100ns 190ns KM4164B-12 120ns 220ns KM4164B-15 150ns 260ns samsung hv capacitor NMOS DRAM KM4164B KM4164BP KM4164 Samsung Tantalum Capacitor TCP KM4164B10

    D4164

    Abstract: D4164 RAM nec D4164-15 4164 ram ram D4164 NEC 4164 D4164-15 pd4164 RAM 4164 4164-15
    Text: NEC |jlPD4164 65,536x1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 D e s c rip tio n The NEC H-PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS Random-access Memory RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both


    OCR Scan     		PDF 536x1-BIT uPD4164 536-word PD4164 xPD4164 D4164 D4164 RAM nec D4164-15 4164 ram ram D4164 NEC 4164 D4164-15 RAM 4164 4164-15

    4164-12

    Abstract: NEC 4164 PD4164 4164-10 LPD416
    Text: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both


    OCR Scan     		PDF uPD4164 536-word M-PD4164 PD4164 fxPD4164 4164-12 NEC 4164 4164-10 LPD416

    sense amplifier bitline memory device

    Abstract: F4164 F4164-1 F4164-2 F4164-3
    Text: F 4164 6 5 ,5 3 6 x 1 Dynamic RAM MOS Memory Products Logic Symbol Description The F4 1 6 4 is a dynamic Random A c c e s s Memory RAM circuit organized a s 6 5 ,5 3 6 single-bit words. This memory u ses the Fairchild advanced double poly NMOS, Isoplanar-H p ro cess which allows


    OCR Scan     		PDF F4164 F4164 sense amplifier bitline memory device F4164-1 F4164-2 F4164-3

    4164-15

    Abstract: MN4164P-15 mn4164
    Text: É Ü É Ü Ü É ti NMOS MEMORY m *. DIGITAL INTEGRATED CIRCUITS DATA MN41 MN41 MN41 MN41 MN41 MN41 64-1 5 6 4 P -1 5 6 4 -2 0 6 4 P -20 6 4 -2 5 6 4 P -25 MN4164 NMOS 65,536 x 1 BIT DYNAMIC RAM D e s c r ip tio n System oriented features include operation from a single +5V


    OCR Scan     		PDF MN4164 02833M 4164-15 MN4164P-15

    4164C

    Abstract: DS9908 MCM4164CP15 MCM4164 MCM4517 mcm4116
    Text: MOTOROLA Order this data W sheet by M C M 4 1 6 4 C P /D n SEMICONDUCTOR TECHNICAL DATA M CM 4164CP 64K Bit Dynamic RAM The MCM4164CP is a 65,536-bit, high-speed, low-power dynamic Random-Access Memory. It is organized as 65,536 one-bit words and fabricated using HMOS highperformance N-channel silicon-gate technology.


    OCR Scan     		PDF 4164CP MCM4164CP 536-bit, 16-pin MCM4164CP 4164C DS9908 MCM4164CP15 MCM4164 MCM4517 mcm4116

    4164 64k dram

    Abstract: Z41H tms4164 S41128B
    Text: TM S41128B 131,072-BIT DYNAMIC RANDOM-ACCESS MEMORY A PRIL 1985 —R EVISED NOVEM BER 1985 16-PIN PLASTIC DUAL-IN-LINE STACKED PACKAGES t 2 X 6 5 ,5 3 6 X 1 Organization TOP VIEW Single 5-V Supply (10% Tolerance) DC 1 U l 6 Uv s s wc 2 15 3 CA S RAS1C 3


    OCR Scan     		PDF S41128B 072-BIT 4164 64k dram Z41H tms4164

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SAB 80C515/80C535 High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C515-16 SAB 80C535/80C535-16 SAB 80C515-T40/110, SAB 80C535-T40/110 SAB 80C515-T40/85 SAB 80C535-T40/85 SAB 80C515-16-T40/85, SAB 80C535-16-T40/85 CMOS microcontroller with factory mask-programmable ROM


    OCR Scan     		PDF 80C515/80C535 80C515/80C515-16 80C535/80C535-16 80C515-T40/110, 80C535-T40/110 80C515-T40/85 80C535-T40/85 80C515-16-T40/85, 80C535-16-T40/85 80C515

    siemens 80C535 microcontroller

    Abstract: siemens 80c515 80C535-16-N 80C535-16-T40/85
    Text: SIEM EN S SAB 80C515/80C535 High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB SAB SAB SAB SAB SAB SAB SAB 80C515/80C515-16 80C535/80C535-16 80C515-T40/110, 80C535-T40/110 80C515-T40/85 80C535-T40/85 80C515-16-T40/85, 80C535-16-T40/85 CMOS microcontroller with factory mask-programmable ROM


    OCR Scan     		PDF 80C515/80C535 80C515/80C515-16 80C535/80C535-16 80C515-T40/110, 80C535-T40/110 80C515-T40/85 80C535-T40/85 80C515-16-T40/85, 80C535-16-T40/85 80C515 siemens 80C535 microcontroller siemens 80c515 80C535-16-N 80C535-16-T40/85

    intel 82720

    Abstract: 82720 8086 8257 DMA controller interfacing 7 segment display 056 RCC gdc U 82720 interfacing of 8257 with 8086 d82720 algorithm graphic DDA circle intel MCS-48 interfacing of 8257 devices with 8085
    Text: 82720 GDC Application Manual LITERATURE 1983 w ill be a year o f tra n sitio n fo r Intel’s catalog program . In order to better serve you, we are reorganizing many of o u r catalogs to more closely reflect p ro d u ct groups. In addition to the new p ro d u ct line handbooks listed below, the INTEL PRODUCT GUIDE O rder No.


    OCR Scan     		PDF 30pendix LS244 LS257 intel 82720 82720 8086 8257 DMA controller interfacing 7 segment display 056 RCC gdc U 82720 interfacing of 8257 with 8086 d82720 algorithm graphic DDA circle intel MCS-48 interfacing of 8257 devices with 8085

    ic vertical la 78141

    Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
    Text: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices


    OCR Scan     		PDF CH-8953 ic vertical la 78141 IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


    OCR Scan     		PDF

    M28F020

    Abstract: intel 27122
    Text: ß ß g y ß a o iN A O tff in te i M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm *— 10 ¡is Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum


    OCR Scan     		PDF M28F020 2048K 32-Pin 32-Lead MIL-STD-883: 1bl75 M28F020 120ns MD28F020-90 MD28F020-12 intel 27122

    M28F020

    Abstract: M80C186 M28F020-20
    Text: in te l P R IU M O IM IR W M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 jxs Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum


    OCR Scan     		PDF M28F020 2048K 32-Pin 32-Lead MIL-STD-883: M28F020 MD28F020-90 MF28F020-90 M80C186 M28F020-20

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401