MCP604SL
Abstract: MCP602SN MCP6022 equivalent input id mic520930 Impala 2002 MCP617 equivalent TC105333 MCP6022 "cross reference" lm331 equivalent MCP6022 equivalent
Text: Microchip - Analog and Interface Distributor's Cross Reference Guide Competition Part Number Description Package Microchip 2nd Microchip Pin-toSource Equivalent Pin Equivalent Microchip Functional Advanced Linear Devices Advanced Linear Devices ALD500APC Precision Analog A/D Front End
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A8405SLH-27
A8405SLH-28
A8405SLH-30
A8405SLH-33
A8405SLH-36
A8405SLH-40
A8405SLH-50
A8188SLT-yy
A8205SLH-27
A8205SLH-28
MCP604SL
MCP602SN
MCP6022 equivalent input id
mic520930
Impala 2002
MCP617 equivalent
TC105333
MCP6022 "cross reference"
lm331 equivalent
MCP6022 equivalent
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DDR4 "application note"
Abstract: LTC3876 dual tracking linear power supply
Text: Dual DC/DC Controller for DDR Power with Differential VDDQ Sensing and ±50mA VT T Reference Design Note 1026 Ding Li Introduction The LTC 3876 is a complete DDR power solution, compatible with DDR1, DDR2, DDR3 and DDR4 lower voltage standards. The IC includes VDDQ and V TT DC/
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LTC3876
200kHz
dn1026f
DDR4 "application note"
dual tracking linear power supply
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1000uf, 25v electrolytic capacitor footprint
Abstract: MIC2159 MIC2159YMME MIC2169A MSOP10 MSOP-10 M9999-101206 Aluminium Housed high Power Resistor
Text: MIC2159 SYNCHRONOUS-itty Step-Down Converter IC General Description Features The MIC2159 is a high efficiency, simple to use synchronous buck controller ICs housed in a 10-pin MSOP ePAD package. The MIC2159 switches at 400kHz, allowing the smallest possible external components and is
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MIC2159
MIC2159
10-pin
400kHz,
10-pin
M9999-101206
1000uf, 25v electrolytic capacitor footprint
MIC2159YMME
MIC2169A
MSOP10
MSOP-10
M9999-101206
Aluminium Housed high Power Resistor
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MIC2159
Abstract: MIC2159YMME MIC2169A MSOP10 MSOP-10
Text: MIC2159 SYNCHRONOUS-itty Step-Down Converter IC General Description Features The MIC2159 is a high efficiency, simple to use synchronous buck controller ICs housed in a 10-pin MSOP ePAD package. The MIC2159 switches at 400kHz, allowing the smallest possible external components and is
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MIC2159
MIC2159
10-pin
400kHz,
10-pin
M9999-030509-B
MIC2159YMME
MIC2169A
MSOP10
MSOP-10
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Untitled
Abstract: No abstract text available
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
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2511NZ
Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
2511NZ
dual mosfet tt 6 pin
Diode N7 S2
2511N
6 pin diode n10
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Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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Untitled
Abstract: No abstract text available
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
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scr gate driver ic
Abstract: HEXFET Power MOSFET designer manual "MOS Controlled Thyristors" UC1710 application notes mosfet discrete totem pole drive CIRCUIT IRFP460 transistor databook HEXFET Power MOSFET Designers Manual irfp460 igbt SCR gate drive circuit datasheet irfp460 mosfet
Text: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards
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U-137
1000pF
UC3724
UC3725
600kHz
O-220
scr gate driver ic
HEXFET Power MOSFET designer manual
"MOS Controlled Thyristors"
UC1710 application notes
mosfet discrete totem pole drive CIRCUIT
IRFP460 transistor databook
HEXFET Power MOSFET Designers Manual
irfp460 igbt
SCR gate drive circuit
datasheet irfp460 mosfet
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2601NZ
Abstract: FDW2601NZ 2601N
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
2601NZ
2601N
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Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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2601NZ
Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
2601NZ
47e3
Diode N7 S2
N9 S2 MARKING DIODE
096E-9
dual mosfet 337
Dual N-Channel 2.5V
17E-3
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5e8 marking
Abstract: 66E-3
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
5e8 marking
66E-3
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n mosfet pspice parameters
Abstract: FDW2512NZ 2512nz
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
n mosfet pspice parameters
2512nz
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2511NZ
Abstract: m068 BV150 FDW2511NZ n10 diode 51E3 KP17 Diode N7 S2
Text: May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
2511NZ
m068
BV150
n10 diode
51E3
KP17
Diode N7 S2
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Untitled
Abstract: No abstract text available
Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
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FDW2601NZ
Abstract: N-Channel 2.5V 2601NZ
Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
N-Channel 2.5V
2601NZ
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Untitled
Abstract: No abstract text available
Text: May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features 7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
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irf840 mosfet drive circuit diagram
Abstract: Application of irf840 TPS2812 power supply IRF840 APPLICATION SCHEMATIC POWER SUPPLY irf840 irf840 power supply TPS2811 TPS2812D TPS2813 TPS2814
Text: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS S LVS132C - N O VE M B E R 1995 - R EVISED JA N U A R Y 1997 • Industry-Standard Driver Replacement • 25-ns Max Rise/Fall Times and 40-ns Max Propagation Delay - 1-nF Load, V c c = 14 V
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TPS2811,
TPS2812,
TPS2813,
TPS2814,
TPS2815
SLVS132C
TPS2813
25-ns
irf840 mosfet drive circuit diagram
Application of irf840
TPS2812
power supply IRF840 APPLICATION
SCHEMATIC POWER SUPPLY irf840
irf840 power supply
TPS2811
TPS2812D
TPS2813
TPS2814
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IC17660
Abstract: MAX722 MAX717 MAX774/775/776 MAX1655 12v 5a adapter power supply for TV LCD MAX4426
Text: Power Management X Multi-Function Supplies 1-Cell Portables & 2-Way Pagers t MAX847 multi-function supply with boost charger, drivers & A/D # MAX845 (750mW isolated transformer driver) MAX620 (quad driver) MAX622 (VoUT = VlN+ 11V) MAX1705/1706 (1V start-up, step-up
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MAX847
MAX848/849
200mA)
MAX717
MAX718
MAX719
MAX720
MAX721
MAX722
MAX845
IC17660
MAX722
MAX717
MAX774/775/776
MAX1655
12v 5a adapter power supply for TV LCD
MAX4426
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cl7663a
Abstract: EV-KIT max713 Transformer 220 to16v MAX722 MAX717 33z3 Y711 0-9v 500ma transformer MAX753
Text: Power Management Multi-Function Supplies MAX845 750mW isolated transfoimer driver High-Side MOSFET Drivers MAX620 (quad driver) MAX622 (VouT = V|N + 11V) t * MAX848 (2.7V to 5V step-up, with A/D battery monitoring, 200mA, 3.3V out) MAX849 (2.7V to 5V step-up,
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MAX845
750mW
MAX620
MAX622
MAX890L
90mfl,
MAX891L/892L
150/300mQ,
500/250mA,
MAX894L/895L
cl7663a
EV-KIT max713
Transformer 220 to16v
MAX722
MAX717
33z3
Y711
0-9v 500ma transformer
MAX753
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TRANSISTOR 132D
Abstract: SCHEMATIC POWER SUPPLY irf840 PHU regulator TRANSISTOR J 132D irf840 mosfet drive circuit diagram 132d transistor
Text: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS _ SLVS132D - NOVEMBER 1995 - REVISED NOVEMBER 1997 • • Industry-Standard Driver Replacement 25-ns Max Rise/Fall Times and 40-ns Max Propagation Delay - 1-nF Load, V qq = 14 V
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TPS2811,
TPS2812,
TPS2813,
TPS2814,
TPS2815
SLVS132D
25-ns
40-ns
TRANSISTOR 132D
SCHEMATIC POWER SUPPLY irf840
PHU regulator
TRANSISTOR J 132D
irf840 mosfet drive circuit diagram
132d transistor
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tl494
Abstract: power inverter with tl494 schematic 810R1 428m
Text: OM426MJ OM427MJ OM428MJ DUAL POWER MOSFET DRIVERS FEATURES: • • • • • • • • CerDIP 8-Pin Package TTL/CMOS Input Compatible High Speed Switching CH = 1000 pf = 30 nsec 1.5 Amp Peak Output Current 4.5V to 18V Operating Supply Voltage 30 nsec Rise Time
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OM426MJ
OM427MJ
OM428MJ
OM426/427/428MJ
L-046
tl494
power inverter with tl494 schematic
810R1
428m
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Untitled
Abstract: No abstract text available
Text: Dual, High-Effìciency, PFM, Step-Up DC-DC Controller Description _ Features ♦ Smallest Dual Step-Up Converter: 16-Pin QSOP ♦ 90% Efficiency ♦ 1.5V Start-Up Voltage ♦ 85pA Max Total Quiescent Supply Current
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16-Pin
MAX863C/D
MAX863EEE
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