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    ATC100B101JW500X

    Abstract: CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B NPT1007 DTA183 RES2512 ELXY630ELL271MK25S
    Text: AD-014 AD-014: Nitronex NPT1007 GaN HEMT Tuned for 500-1000 MHz Application design AD-014 with one half of a Nitronex NPT1007 GaN HEMT device outputs approximately 50 Watts of average RF power under CW conditions with approximately 9.0 to 14 dB gain, 50% drain efficiency. All measurements were collected


    Original     		PDF AD-014 AD-014: NPT1007 AD-014 1000MHz 700mA. APB08-132 ATC100B101JW500X CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B DTA183 RES2512 ELXY630ELL271MK25S