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    DT 7132 Search Results

    DT 7132 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    71321LA20PFG Renesas Electronics Corporation 2K x 8 Dual-Port RAM w/Int Visit Renesas Electronics Corporation
    71321LA25JI Renesas Electronics Corporation 2K x 8 Dual-Port RAM w/Int Visit Renesas Electronics Corporation
    71321LA25TFGI Renesas Electronics Corporation 2K x 8 Dual-Port RAM w/Int Visit Renesas Electronics Corporation
    71321LA35TF8 Renesas Electronics Corporation 2K x 8 Dual-Port RAM w/Int Visit Renesas Electronics Corporation
    71321LA55TFG8 Renesas Electronics Corporation 2K x 8 Dual-Port RAM w/Int Visit Renesas Electronics Corporation
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    DT 7132 Price and Stock

    Integrated Device Technology Inc IDT7132LA35J8

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    Bristol Electronics IDT7132LA35J8 200
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    Integrated Device Technology Inc IDT71321SA55PF

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    Bristol Electronics IDT71321SA55PF 159
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    Integrated Device Technology Inc IDT7132SA35J

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    IDT7132SA35J 11
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    IDT7132SA35J 8 1
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    Integrated Device Technology Inc IDT7132LA90J

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    Bristol Electronics IDT7132LA90J 47 1
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    Integrated Device Technology Inc IDT71321SA35J

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    Bristol Electronics IDT71321SA35J 32
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    ComSIT USA IDT71321SA35J 34
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    Chip 1 Exchange IDT71321SA35J 386
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    DT 7132 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRLP2505

    Abstract: IRFPE30
    Text: Previous Datasheet Index Next Data Sheet PD - _ IRLP2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated


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    PDF IRLP2505 O-247 FPE30 IRLP2505 IRFPE30

    IRL2505

    Abstract: IRF1010
    Text: Previous Datasheet Index Next Data Sheet PD - _ IRL2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated


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    PDF IRL2505 O-220 IRF1010 IRL2505 IRF1010

    IRFPE30

    Abstract: IRLP3803 GD4000
    Text: Previous Datasheet Index Next Data Sheet PD - _ IRLP3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated


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    PDF IRLP3803 O-247 isFPE30 IRFPE30 IRLP3803 GD4000

    MOSFET 20V 120A

    Abstract: IRFPE30 IRLP3803 ISD71A
    Text: PD - _ IRLP3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description VDSS = 30V RDS on = 0.006Ω


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    PDF IRLP3803 O-247 IRFPE30 MOSFET 20V 120A IRFPE30 IRLP3803 ISD71A

    IRF1010

    Abstract: IRL2910
    Text: Previous Datasheet Index Next Data Sheet PD 9.1375 IRL2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated


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    PDF IRL2910 O-220 IRF1010 IRL2910

    IRFPE30

    Abstract: IRLP2505
    Text: PD - _ IRLP2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description VDSS = 55V RDS on = 0.008Ω


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    PDF IRLP2505 O-247 IRFPE30 IRFPE30 IRLP2505

    AN-994

    Abstract: IRF3205S IRF530S
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1304A IRF3205S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V


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    PDF IRF3205S AN-994 IRF3205S IRF530S

    IRF540N

    Abstract: MOSFET IRF540n IRF1010 irf1010 applications
    Text: PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier


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    PDF IRF540N O-220 IRF1010 IRF540N MOSFET IRF540n IRF1010 irf1010 applications

    IRFZ24N

    Abstract: IRFZ24N equivalent IRF1010
    Text: PD - 9.1354 IRFZ24N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.07Ω ID = 17A Description Fifth Generation HEXFETs from International Rectifier


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    PDF IRFZ24N O-220 IRF1010 IRFZ24N IRFZ24N equivalent IRF1010

    IRF1010N

    Abstract: IRF1010
    Text: Previous Datasheet Index Next Data Sheet PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description


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    PDF 1278B IRF1010N O-220 IRF1010N IRF1010

    AN-994

    Abstract: IRF530S IRFZ34NS
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1311 IRFZ34NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description VDSS = 55V RDS on = 0.040Ω


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    PDF IRFZ34NS AN-994 IRF530S IRFZ34NS

    IRFP2410

    Abstract: IRFPE30
    Text: Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS = 100V RDS on = 0.025 Ω


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    PDF IRFP2410 O-247 IRFPE30 IRFP2410 IRFPE30

    IRFD420

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD -9.1227 IRFD420 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 500V RDS on = 3.0Ω


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    PDF IRFD420 IRFD420

    IRF3205S

    Abstract: AN-994 IRF530S
    Text: PD - 9.1304A IRF3205S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.008Ω ID = 98A Description


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    PDF IRF3205S IRF3205S AN-994 IRF530S

    IRF530N

    Abstract: IRF530N applications IRF1010 irf1010 applications
    Text: PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description Fifth Generation HEXFETs from International Rectifier


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    PDF IRF530N O-220 IRF1010 IRF530N IRF530N applications IRF1010 irf1010 applications

    IRFP2410

    Abstract: IRFPE30
    Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling


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    PDF IRFP2410 O-247 FPE30 IRFP2410 IRFPE30

    cmos 555 timer

    Abstract: ir2151 IR51H737 PD6061
    Text: International S Rectifier Data Sheet No. PD-6.061A IR51H737 SELF-OSCILLATING HALF-BRIDGE Features Product Summary Floating channel designed for bootstrap operation Fully operational to +300V Tolerant to negative transient voltage dV/dt immune Undervoltage lockout


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    PDF IR51H737 IR51H737 5S14SP D023n0 cmos 555 timer ir2151 PD6061

    TB-09A

    Abstract: sylogi
    Text: \dt CMOS DUAL-PORT RAM 16K 2K x 8-BIT) IDT7132SA/LA IDT7142SA/L A integrated Device Technology, inc. FEATURES: • High-speed access —- Military: 25/35/55/100ns (max.) — Commercial: 25/35/55/100ns (max.) — Commercial: 20ns only in PLCC for 7132 • Low-power operation


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    PDF IDT7132SA/LA IDT7142SA/L 25/35/55/100ns IDT7132/42SA 775mW IDT7132/42LA 550mW IDT7132 16-ormore TB-09A sylogi

    IR2151

    Abstract: No abstract text available
    Text: International S Rectifier Data Sheet No. PD-6.034E IR2151 SELF-OSCILLATING HALF-BRIDGE DRIVER Product Summary Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Undervoltage lockout


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    PDF IR2151 ----------------75Q) IR2151 IR2151S

    Untitled

    Abstract: No abstract text available
    Text: International [zor]Rectifier Provisional Data Sheet No. PD-6.043B IR2101 HIGH AND LOW SIDE DRIVER Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


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    PDF IR2101 IR2101 IR2101S

    Untitled

    Abstract: No abstract text available
    Text: International llQR]Rectifier Data Sheet No. PD-6.058C IR51H214 SELF-OSCILLATING HALF-BRIDGE Features • ■ ■ Product Summary Floating channel designed for bootstrap operation Fully operational to +250V Tolerant to negative transient voltage dV/dt immune


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    PDF IR51H214 S5452

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier Data Sheet No. PD-6.060C IR51H310 SELF-OSCILLATING HALF-BRIDGE Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Undervoltage lockout


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    PDF IR51H310 IR51H310 5S452 00Z31Ã 4A55452

    IR2151

    Abstract: ir215
    Text: International les Rectifier Data Sheet No. PD-6.034G IR2151 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Undervoltage lockout


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    PDF IR2151 IR2151 5M-1982. MS-012AA. ir215

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD - 9.1251 International S Rectifier IRFP2410 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • Repetitive Avalanche Rated • 175*0 Operating Temperature • Fast Switching


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    PDF IRFP2410 O-247