Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N10T IXTQ160N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V
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IXTH160N10T
IXTQ160N10T
O-247
160N10T
1-16-06-A
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200N10T
Abstract: N mosfet 100v 200A IXTV200N10TS PLUS220SMD
Text: IXTV200N10T IXTV200N10TS TrenchMVTM Power MOSFET VDSS ID25 = 100V = 200A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ
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IXTV200N10T
IXTV200N10TS
PLUS220
PLUS220SMD
200N10T
9-30-08-D
N mosfet 100v 200A
IXTV200N10TS
PLUS220SMD
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RT9971
Abstract: DS9971 lx129
Text: RT9971 7 CH Power Management IC General Description Features The RT9971 is a complete power supply solution for digital still cameras and other hand held devices. The RT9971 is a multi-channel power management IC including two stepup DC/DC converters, two step-down DC/DC converters,
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RT9971
RT9971
DS9971-01
DS9971
lx129
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Untitled
Abstract: No abstract text available
Text: PreliminaryTechnical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA180N10T7 RDS on = 100 V = 180 A Ω ≤ 6.4 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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IXTA180N10T7
O-263
180N10T
1-20-06-A
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IXTH240N055T
Abstract: IXTQ240N055T 240N055T
Text: Preliminary Technical Information IXTH240N055T IXTQ240N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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IXTH240N055T
IXTQ240N055T
O-247
240N055T
11-16-06-B
IXTH240N055T
IXTQ240N055T
240N055T
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180N10T
Abstract: No abstract text available
Text: PreliminaryTechnical Information TrenchMVTM Power MOSFET IXTA180N10T7 VDSS ID25 RDS on = 100 V = 180 A Ω ≤ 6.4 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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IXTA180N10T7
180N10T
1-20-06-A
180N10T
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IXTH160N10T
Abstract: IXTQ160N10T
Text: Preliminary Technical Information IXTH160N10T IXTQ160N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V
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IXTH160N10T
IXTQ160N10T
O-247
160N10T
1-16-06-A
IXTH160N10T
IXTQ160N10T
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 180 A Ω ≤ 6.4 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C
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IXTH180N10T
IXTQ180N10T
O-247
180N10T
1-20-06-A
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN32N120P VDSS = 1200V 32A ID25 = Ω RDS on ≤ 0.31Ω ≤ 300 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFN32N120P
32N120P
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IXTH180N10T
Abstract: 180N10T IXTQ180N10T
Text: Preliminary Technical Information IXTH180N10T IXTQ180N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 180 A Ω ≤ 6.4 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C
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IXTH180N10T
IXTQ180N10T
O-247
180N10T
1-20-06-A
IXTH180N10T
180N10T
IXTQ180N10T
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32N120P
Abstract: ixfn32n120p IXFN32N120
Text: PolarTM Power MOSFET HiPerFETTM IXFN32N120P VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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IXFN32N120P
300ns
32N120P
4-03-08-B
ixfn32n120p
IXFN32N120
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200N1
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTV200N10T IXTV200N10TS = 100 V = 200 A ≤ 5.5 m Ω RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXTV) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C
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IXTV200N10T
IXTV200N10TS
PLUS220
PLUS220SMD
200N10T
11-03-06-B
200N1
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH240N055T IXTQ240N055T VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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IXTH240N055T
IXTQ240N055T
O-247
240N055T
11-16-06-B
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IXFN32N120P
Abstract: 32N120P 32N120
Text: IXFN32N120P PolarTM HiPerFETTM Power MOSFET VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol miniBLOC E153432 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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IXFN32N120P
300ns
E153432
Nm/l100
100ms
32N120P
3-04-10-D
IXFN32N120P
32N120
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motorola 9100-11
Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Text: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC
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MC33120/D
MC33120
motorola 9100-11
Battery Managements
MC33120P
mjd41
rs 3060 cj
1N4002
MC33120FN
ST12
ST21
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transistor tip 62
Abstract: MC33120 MC33120P wiring VDG 13 relay motorola mc33120 rs 3060 cj MC33120FN ST11 ST21 ST22
Text: Order this data sheet by MC33120/D MV « WP* MOTOROLA SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
ho056
transistor tip 62
MC33120P
wiring VDG 13 relay
motorola mc33120
rs 3060 cj
MC33120FN
ST11
ST21
ST22
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MC33120P
Abstract: DS9971 wiring VDG 13 relay radio equipment ml 15-e MC33120FN PEAK DETECTOR CIRCUIT SHORT NOTE rs 3060 cj simple SL 100 NPN Transistor 1N4002 TIP 42 transistor
Text: Order this data sheet by MC33120/D MV « WP* MOTOROLA SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
MC33120P
DS9971
wiring VDG 13 relay
radio equipment ml 15-e
MC33120FN
PEAK DETECTOR CIRCUIT SHORT NOTE
rs 3060 cj
simple SL 100 NPN Transistor
1N4002
TIP 42 transistor
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