DS98 Search Results

DS98 Result Highlights (3)

Part	Manufacturer	Description
ADS9817RSHT	Texas Instruments	Eight-channel, 18-bit, 2-MSPS/ch dual simultaneous-sampling ADC with integrated analog front end 56-VQFN -40 to 125
ADS9817RSHR	Texas Instruments	Eight-channel, 18-bit, 2-MSPS/ch dual simultaneous-sampling ADC with integrated analog front end 56-VQFN -40 to 125
PADS9815RSHT	Texas Instruments	Eight-channel, 18-bit, 1-MSPS/ch dual simultaneous-sampling ADC with integrated analog front end 56-VQFN -40 to 125

DS98 Price and Stock

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Texas Instruments ADS9817RSHT EIGHT-CHANNEL 18-BIT 2-MSPS/CH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADS9817RSHT	Bulk	231		1	1 $58.49 10 $48.242 100 $42.8684 1000 $42.8684 10000 $42.8684	Buy Now
Mouser Electronics	ADS9817RSHT		245			1 $57.26 10 $48.25 100 $42.87 1000 $42.87 10000 $42.87	Buy Now
Broadcom Limited HEDS-9820EVB AEDR-9820 225LPI EVAL BOARD-CW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HEDS-9820EVB	Bulk	69		1	1 $59.93 10 $59.93 100 $59.93 1000 $59.93 10000 $59.93	Buy Now
Avnet Americas	HEDS-9820EVB	Box		12 Weeks	72	1 $40 10 $40 100 $40 1000 $40 10000 $40	Buy Now
Mouser Electronics	HEDS-9820EVB		8			1 $58.86 10 $58.86 100 $58.86 1000 $58.86 10000 $58.86	Buy Now
Broadcom Limited HEDS-9830EVB AEDR-9830 318LPI EVAL BOARD-CW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HEDS-9830EVB	Bulk	51		1	1 $59.93 10 $59.93 100 $59.93 1000 $59.93 10000 $59.93	Buy Now
Avnet Americas	HEDS-9830EVB	Box		16 Weeks	72	1 $40 10 $40 100 $40 1000 $40 10000 $40	Buy Now
Mouser Electronics	HEDS-9830EVB		54			1 $58.86 10 $58.86 100 $58.86 1000 $58.86 10000 $58.86	Buy Now
Broadcom Limited HEDS-9830DPEVB AEDR-9830DP 318LPI EVAL BOARD-CW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HEDS-9830DPEVB	Bulk	48		1	1 $70.2 10 $70.2 100 $70.2 1000 $70.2 10000 $70.2	Buy Now
Avnet Americas	HEDS-9830DPEVB			16 Weeks	53	1 - 10 - 100 $58.08 1000 $55.44 10000 $55.44	Buy Now
Mouser Electronics	HEDS-9830DPEVB		53			1 $83.37 10 $77.98 100 $71.46 1000 $71.46 10000 $71.46	Buy Now
Broadcom Limited HEDS-9830DPEVBL AEDR-9830DP 318LPI EVAL BOARD-CS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HEDS-9830DPEVBL	Bulk	45		1	1 $80.44 10 $80.44 100 $80.44 1000 $80.44 10000 $80.44	Buy Now
Avnet Americas	HEDS-9830DPEVBL			16 Weeks	46	1 $62 10 $62 100 $62 1000 $62 10000 $62	Buy Now
Mouser Electronics	HEDS-9830DPEVBL		46			1 $95.53 10 $89.36 100 $86.43 1000 $86.43 10000 $86.43	Buy Now

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DS98 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
DS-980GB-00A1E	Advantech	Uncategorized - Miscellaneous - INTEL SKYLAKE-S, BAREBONE W/ PCI	Original	PDF
DS-980GF-U3A1E	Advantech	Uncategorized - Miscellaneous - INTEL I5-6500TE, W/ 4G+4G RAM, 5	Original	PDF
DS-980GF-U4A1E	Advantech	Uncategorized - Miscellaneous - INTEL I7-6700TE, W/ 4G+4G RAM, 5	Original	PDF
DS-980GL-00A1E	Advantech	Uncategorized - Miscellaneous - INTEL SKYLAKE-S, BAREBONE W/O PC	Original	PDF
DS-980GL-U3A1E	Advantech	Uncategorized - Miscellaneous - INTEL I5-6500TE, W/ 4G+4G RAM, 5	Original	PDF
DS-980GL-U4A1E	Advantech	Uncategorized - Miscellaneous - INTEL I7-6700TE, W/ 4G+4G RAM, 5	Original	PDF
DS-980UDS1-G1E-C	Advantech	Uncategorized - Miscellaneous - IMM DS PRO (6 DISPLAYS): DS-980,	Original	PDF

DS98 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Errata: CS5480 Rev B2 Silicon Reference CS5480 data sheet revision DS980F3 dated MAR’13 Erratum 1 - Using Line-cycle Synchronized Averaging Mode with DSP_LCK[4:0] Description Setting the DSP_LCK[4:0] bits in the RegLock register to 0x16 enables DSP write-protection	Original	PDF	CS5480 DS980F3 CS5480 ER980B2
RBS 6601 Abstract: fault codes for RBS 6601 RBS 2202 Product Description for RBS 6601 6601 bts T7630 bts rbs 2202 CEPT-E1 f 4556 rbs 6601 description Text: Device Advisory September 1999 T7630 Device Advisory for Version 2.0 of the Device Introduction This advisory applies to the T7630 Dual T1/E1 5.0 V Short-Haul Terminator as described in the May 1998 T7630 Dual T1/E1 5.0 V Short-Haul Terminator Terminator-II Preliminary Data Sheet (DS98-234TIC).	Original	PDF	T7630 DS98-234TIC) A8--A11, A0--A11) DS98-234TIC DS97-555TIC AY98-008TIC) RBS 6601 fault codes for RBS 6601 RBS 2202 Product Description for RBS 6601 6601 bts bts rbs 2202 CEPT-E1 f 4556 rbs 6601 description
82914 Abstract: FW330F1-59T Text: Requirement Document FW330F1-59T Power Module 36Vdc to 75Vdc Inputs; 3.3Vdc Output 330 Watts Description The FW330F1-59T Power Modules are the same as the FW330F1 Power Modules consult the FW330 series Power Modules Data Sheet, DS98-240, issued March 2000 for application details with the following exceptions:	Original	PDF	FW330F1-59T 36Vdc 75Vdc FW330F1 FW330 DS98-240, 36-75Vdc RQ01-059EPS 82914
Untitled Abstract: No abstract text available Text: Errata: CS5490 Rev B2 Silicon Reference CS5490 data sheet revision DS982F3 dated MAR’13 Erratum 1 - Using Line-cycle Synchronized Averaging Mode with DSP_LCK[4:0] Description Setting the DSP_LCK[4:0] bits in the RegLock register to 0x16 enables DSP write-protection	Original	PDF	CS5490 DS982F3 CS5490 ER982B2
str 6626 Abstract: tag 8833 TS127 08 T8100 MC 4538 ECTF Micro-Pro 51 T8100A T8102 T8105 Text: Advisory March 1999 Ambassador TM T8100 H.100/H.110 Interface and Time-Slot Interchanger This advisory details two changes to the AmbassadorTM T8100 H.100/H.110 Interface and Time-Slot Interchanger Preliminary Data Sheet: DS98-195NTNB. Change Affecting Page 15, Section 2.1.3 Address Mode Register	Original	PDF	T8100 100/H T8100 DS98-195NTNB. T8100. Multipliers49) DS98-195NTNB DS98-130NTNB, str 6626 tag 8833 TS127 08 MC 4538 ECTF Micro-Pro 51 T8100A T8102 T8105
RBS 2202 Abstract: f 4556 THS24 PR21 T7630 T7633 SA517 805 T42 RFDC Text: Device Advisory September 1999 T7633 Device Advisory for Version 1.0 of the Device Introduction This advisory applies to the T7633 Dual T1/E1 3.3 V Short-Haul Terminator as described in the May 1998 T7633 Dual T1/E1 3.3 V Short-Haul Terminator Advance Data Sheet DS98-244TIC .	Original	PDF	T7633 DS98-244TIC) A8--A11, A0--A11) DS02-244BBAC RBS 2202 f 4556 THS24 PR21 T7630 SA517 805 T42 RFDC
Untitled Abstract: No abstract text available Text: Errata: CS5484 Rev B2 Silicon Reference CS5484 data sheet revision DS981F3 dated MAR’13 Erratum 1 - Using Line-cycle Synchronized Averaging Mode with DSP_LCK[4:0] Description Setting the DSP_LCK[4:0] bits in the RegLock register to 0x16 enables DSP write-protection	Original	PDF	CS5484 DS981F3 CS5484 ER981B2
T7290A Abstract: T7690 T7693 TND1 CB-119 Text: Data Addendum September 1998 T7690 5.0 V T1/E1 Quad Line Interface T7693 3.3 V T1/E1 Quad Line Interface T7690 5.0 V T1/E1 Quad Line Interface, T7693 3.3 V T1/E1 Quad Line Interface DS98-233TIC Data Sheet Correction Pin Diagram (p. 4) Pins 93 and 94 were switched in the pin diagram. Pin 93 should be RRING4 and pin 94 should be RTIP4.	Original	PDF	T7690 T7693 DS98-233TIC) 30L-15P-BA, DS98-233TIC DS97-098TIC) T7290A TND1 CB-119
ixf26n50q Abstract: 24N50 26N50Q 125OC ixf26N50 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	24N50Q 26N50Q 125OC 728B1 ixf26n50q 24N50 26N50Q 125OC ixf26N50
ixys dsi Abstract: 30-08AC 30-12AC ir 2411 Text: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings	Original	PDF	ISOPLUS220TM 220TM 30-08AC 30-12AC ISOPLUS220 DS98791A ixys dsi 30-08AC 30-12AC ir 2411
igbt induction cooker Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120B IC110 O-268 O-247 728B1 123B1 728B1 065B1 28N120B igbt induction cooker induction cooker application notes siemens igbt IXGH 28N120B
28n60 Abstract: No abstract text available Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	28N60BD1 O-247 728B1 123B1 728B1 065B1 28n60
3N120 Abstract: on6017 IXTP3N120 Text: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS	Original	PDF	3N120 O-220 728B1 123B1 728B1 065B1 3N120 on6017 IXTP3N120
application notes IXGH 6N170 Abstract: 6N170 Text: Advance Technical Data High Voltage IGBT VCES IC25 VCE sat tfi(typ) IXGH 6N170 IXGT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	6N170 O-247 O-268 728B1 application notes IXGH 6N170 6N170

IXTK80N25 Abstract: 80N25 megamos Text: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS	Original	PDF	80N25 IXTK80N25 80N25 megamos
24P20 Abstract: No abstract text available Text: Standard Power MOSFET IXTH 24P20 P-Channel Enhancement Mode Avalanche Rated RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -200 V VGS Continuous ±20 V VGSM Transient ±30 V A ID25 TC = 25°C	Original	PDF	24P20 O-247 728B1 123B1 728B1 065B1 24P20
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet	Original	PDF	58N20Q ISOPLUS247TM 728B1
10N170 Abstract: No abstract text available Text: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	PDF	10N170 O-247 O-268 728B1
16-06A Abstract: DSEA16-06AC 1606a Text: DSEA16-06AC IFAV = 2x8 A VRRM = 600 V trr = 35 ns HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 Type DSEA16-06AC ISOPLUS220TM 1 2 1 3 2 3 Isolated back surface * * Patent pending Symbol	Original	PDF	DSEA16-06AC ISOPLUS220TM 6A/DSEC16-06A ISOPLUS220 16-06A DSEA16-06AC 1606a
1n80 Abstract: No abstract text available Text: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	O-263 O-252 728B1 1n80
IXUC160N075 Abstract: No abstract text available Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous	Original	PDF	IXUC160N075 ISOPLUS220TM 220TM 728B1 065B1 123B1 IXUC160N075
120N25 Abstract: SiEMENS EC 350 98 0 Text: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS	Original	PDF	120N25 120N25 SiEMENS EC 350 98 0
24N170 Abstract: No abstract text available Text: Advance Technical Data High Voltage IGBT IXGH 24N170 VCES IXGT 24N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	PDF	24N170 O-247 O-268 728B1
123B16 Abstract: 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q Text: HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM	Original	PDF	44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1 123B16 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q

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DS98 Search Results

DS98 Result Highlights (3)

DS98 Price and Stock

Texas Instruments ADS9817RSHT

Broadcom Limited HEDS-9820EVB

Broadcom Limited HEDS-9830EVB

Broadcom Limited HEDS-9830DPEVB

Broadcom Limited HEDS-9830DPEVBL

DS98 Datasheets (7)

DS98 Datasheets Context Search

Untitled

RBS 6601

82914

Untitled

str 6626

RBS 2202

Untitled

T7290A

ixf26n50q

ixys dsi

igbt induction cooker

28n60

3N120

application notes IXGH 6N170

IXTK80N25

24P20

Untitled

10N170

16-06A

1n80

IXUC160N075

120N25

24N170

123B16