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    Untitled

    Abstract: No abstract text available
    Text: DMN3032LE 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ID RDS(on) max 30V NEW PRODUCT Features and Benefits TA = +25°C 29mΩ @ VGS = 10V 5.6A 35mΩ @ VGS = 4.5V 4.8A •       Low On-Resistance Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN3032LE AEC-Q101 DS36695

    Untitled

    Abstract: No abstract text available
    Text: DMN3032LE 30V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V BR DSS RDS(on) max 30V 29mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V Features and Benefits ID TA = +25°C 5.6A 4.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMN3032LE AEC-Q101 DS36695