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    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V BR DSS 100V Features and Benefits Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V 1.68A


    Original     		PDF ZXMN10A08E6 AEC-Q101 DS31909

    ZXMN10A08E6

    Abstract: 10A8 ZXMN10A08E6TA ZXMN10A08E6TC DS31909 marking 10A8 10A8 SOT23-6
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) 100V TA = 25°C 0.25Ω • Low on-resistance •


    Original     		PDF ZXMN10A08E6 AEC-Q101 OT23-6 DS31909 ZXMN10A08E6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC marking 10A8 10A8 SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits N EW PRODU CT Product Summary V BR DSS 100V Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V


    Original     		PDF ZXMN10A08E6 AEC-Q101 DS31909