93LC66A
Abstract: 93LC66B
Text: 93LC66A/B 4K 2.5V Microwire Serial EEPROM FEATURES BLOCK DIAGRAM • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 µA standby current (maximum) • 512 x 8 bit organization (93LC66A) • 256 x 16 bit organization (93LC66B)
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Original
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PDF
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93LC66A/B
93LC66A)
93LC66B)
DS21209C-page
93LC66A
93LC66B
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25A, 50V BRIDGE-RECTIFIER
Abstract: E94661 GBPC25
Text: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · · · GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak Electrically Isolated Metal Base for Maximum
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Original
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PDF
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GBPC25005/W
GBPC2510/W
E94661
DS21209
25A, 50V BRIDGE-RECTIFIER
E94661
GBPC25
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Untitled
Abstract: No abstract text available
Text: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak
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Original
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PDF
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GBPC25005/W
GBPC2510/W
E95060
DS21209
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E94661
Abstract: GBPC25 GBPC
Text: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · · · GBPC Glass Passivated Die Construction Low Reverse Leakage Current H Low Power Loss, High Efficiency B GBPC / GBPC-W E Surge Overload Rating to 300A Peak Metal Base for Maximum Heat Dissipation
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Original
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PDF
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GBPC25005/W
GBPC2510/W
E94661
DS21209
E94661
GBPC25
GBPC
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FASTON
Abstract: GBPC2501W
Text: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · · · · Glass Passivated Die Construction GBPC Diffused Junction H Low Reverse Leakage Current B Low Power Loss, High Efficiency GBPC / GBPC-W E Surge Overload Rating to 300A Peak
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Original
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PDF
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GBPC25005/W
GBPC2510/W
E94661
DS21209
GBPC25005
GBPC2501
GBPC2502
GBPC2504
FASTON
GBPC2501W
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Untitled
Abstract: No abstract text available
Text: M 93LC66A/B 4K 2.5V Microwire¨ Serial EEPROM FEATURES BLOCK DIAGRAM • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 µA standby current (maximum) • 512 x 8 bit organization (93LC66A) • 256 x 16 bit organization (93LC66B)
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Original
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PDF
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93LC66A/B
93LC66A)
93LC66B)
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Untitled
Abstract: No abstract text available
Text: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · · · GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak Electrically Isolated Metal Base for Maximum
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Original
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PDF
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GBPC25005/W
GBPC2510/W
E94661
DS21209
|
Untitled
Abstract: No abstract text available
Text: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · · · GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak Electrically Isolated Metal Base for Maximum
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Original
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PDF
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GBPC25005/W
GBPC2510/W
E95060
DS21209
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24AA00
Abstract: 24C00 24LC00 93LC66A 93LC66B
Text: M 93LC66A/B 4K 2.5V Microwire Serial EEPROM FEATURES BLOCK DIAGRAM • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 µA standby current (maximum) • 512 x 8 bit organization (93LC66A) • 256 x 16 bit organization (93LC66B)
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Original
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PDF
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93LC66A/B
93LC66A)
93LC66B)
DS21209B-page
24AA00
24C00
24LC00
93LC66A
93LC66B
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93LC66A
Abstract: 93LC66B
Text: M 93LC66A/B 4K 2.5V Microwire Serial EEPROM FEATURES BLOCK DIAGRAM • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 µA standby current (maximum) • 512 x 8 bit organization (93LC66A) • 256 x 16 bit organization (93LC66B)
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Original
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PDF
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93LC66A/B
93LC66A)
93LC66B)
DS21209A-page
93LC66A
93LC66B
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93LC66A
Abstract: 93LC66B
Text: M 93LC66A/B 4K 2.5V Microwire¨ Serial EEPROM FEATURES BLOCK DIAGRAM • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 µA standby current (maximum) • 512 x 8 bit organization (93LC66A) • 256 x 16 bit organization (93LC66B)
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Original
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PDF
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93LC66A/B
93LC66A)
93LC66B)
DS21209C-page
93LC66A
93LC66B
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25A, 50V BRIDGE-RECTIFIER
Abstract: E94661 GBPC25
Text: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER Features GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak Electrically Isolated Metal Base for Maximum
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Original
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PDF
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GBPC25005/W
GBPC2510/W
E94661
DS21209
25A, 50V BRIDGE-RECTIFIER
E94661
GBPC25
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GBJ2510
Abstract: GBPC2504W
Text: OBSOLETE PLEASE USE GBJ25005 – GBJ2510 DS21221 GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER Features • Glass Passivated Die Construction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak
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Original
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PDF
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GBJ25005
GBJ2510
DS21221)
GBPC25005/W
GBPC2510/W
E94661
DS21209
GBJ2510
GBPC2504W
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Untitled
Abstract: No abstract text available
Text: M ic r o c h ip 93LC66A/B 4K 2.5V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 |jA standby current (maximum) 512 x 8 bit organization (93LC66A)
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OCR Scan
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PDF
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93LC66A/B
93LC66A)
93LC66B)
93LC66BXT
DS21209A-page
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|
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SOIC Package 8-Pin Surface Mount 601
Abstract: No abstract text available
Text: 93LC66A/B M ic r o c h ip 4K 2.5 V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 standby current (maximum) 512 x 8 bit organization (93LC66A)
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OCR Scan
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PDF
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93LC66A/B
93LC66A)
93LC66B)
O-153
DS00049M
SOIC Package 8-Pin Surface Mount 601
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25A, 50V BRIDGE-RECTIFIER
Abstract: GBPC25 gbpc2506w
Text: GBPC25005/W - GBPC2510/W VISHAY 25A GLASS PASSIVATED BRIDGE RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak
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OCR Scan
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PDF
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GBPC25005/W
GBPC2510/W
E95060
MIL-STD-202,
DS21209
25A, 50V BRIDGE-RECTIFIER
GBPC25
gbpc2506w
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Untitled
Abstract: No abstract text available
Text: 93LC66A/B M ic r o c h ip 4K 2.5V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 pA standby current (maximum) • 512 x 8 bit organization (93LC66A)
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OCR Scan
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PDF
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93LC66A/B
93LC66A)
93LC66B)
DS21209C-page
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25A, 50V BRIDGE-RECTIFIER
Abstract: GBPC25
Text: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER Features GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak Electrically Isolated Metal Base for Maximum
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OCR Scan
|
PDF
|
GBPC25005/W
GBPC2510/W
E95060
MIL-STD-202,
DS21209
GBPC2510/W
25A, 50V BRIDGE-RECTIFIER
GBPC25
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Untitled
Abstract: No abstract text available
Text: M 93LC66A/B ic r o c h ip 4K 2.5V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 jiA standby current (maximum) • 512 x 8 bit organization (93LC66A)
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OCR Scan
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PDF
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93LC66A/B
93LC66A)
93LC66B)
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02W04
Abstract: No abstract text available
Text: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER Features_ GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak Electrically Isolated Metal Base for Maximum
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OCR Scan
|
PDF
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GBPC25005/W
GBPC2510/W
E95060
DS21209
02W04
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