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Pentair Equipment Protection - Hoffman EKDS20164 COMPACT ENC SS 2DR W MP
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DigiKey	EKDS20164	Bulk			1	1 $11683.11 10 $11683.11 100 $11683.11 1000 $11683.11 10000 $11683.11	Buy Now
STAHLIN DS201610W 20X16X10 FIBERGLASS ENCL
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DigiKey	DS201610W	Bulk			1	1 $635.79 10 $635.79 100 $635.79 1000 $635.79 10000 $635.79	Buy Now
STAHLIN DS201610HW 20X16X10 FIBERGLASS ENCL
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DigiKey	DS201610HW	Bulk			1	1 $521.05 10 $521.05 100 $521.05 1000 $521.05 10000 $521.05	Buy Now
Maxim Integrated Products DS2016-100 IC SRAM 16KBIT PARALLEL 24DIP
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DigiKey	DS2016-100	Tube			5,008	1 - 10 - 100 - 1000 - 10000 $5.47147	Buy Now
Maxim Integrated Products DS2016-150 IC SRAM 16KBIT PARALLEL 24DIP
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DigiKey	DS2016-150	Tube			16	1 - 10 - 100 $6.78375 1000 $6.78375 10000 $6.78375	Buy Now

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DS2016 Datasheets (25)

Part	Manufacturer	Description	Datasheet Type	PDF
DS2016	Dallas Semiconductor	2k x 8 3V/5V Operation Static RAM	Original	PDF
DS2016	Maxim Integrated Products	2K x 8 3V-5V Operation Static RAM	Original	PDF
DS2016	Dallas Semiconductor	2K x 8 3V/5V Operation Static RAM	Scan	PDF
DS2016-100	Dallas Semiconductor	2k x 8 3V/5V Operation Static RAM	Original	PDF
DS2016-100	Maxim Integrated Products	2k x 8 3V/5V Operation Static RAM	Original	PDF
DS2016-100	Maxim Integrated Products		Original	PDF
DS2016-100+	Maxim Integrated Products	2k x 8 3V/5V Operation Static RAM	Original	PDF
DS2016-100+	Maxim Integrated Products	IC SRAM CHIP ASYNC SINGLE 3.3 5V 16KBIT 2KX8 100NS 24 pin PDIP(32.26X13.9X4.45)	Original	PDF
DS2016-150	Dallas Semiconductor	2k x 8 3V/5V Operation Static RAM	Original	PDF
DS2016-150	Dallas Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 16KBIT 150NS 24DIP	Original	PDF
DS2016-150	Maxim Integrated Products		Original	PDF
DS2016-150+	Maxim Integrated Products	2k x 8 3V/5V Operation Static RAM	Original	PDF
DS2016-150+	Maxim Integrated Products	IC SRAM CHIP ASYNC SINGLE 3.3 5V 16KBIT 2KX8 150NS 24 pin PDIP(32.26X13.9X4.45)	Original	PDF
DS2016R	Dallas Semiconductor	2K x 8 3V/5V Operation Static RAM	Original	PDF

DS2016R	Maxim Integrated Products		Original	PDF
DS2016R-100	Dallas Semiconductor	SRAM Chip, Asynchronous, 16Kbit, 3.3V\|5V Supply, Industrial, SOIC, 24-Pin	Original	PDF
DS2016R-100	Maxim Integrated Products	2k x 8 3V/5V Operation Static RAM	Original	PDF
DS2016R-100	Maxim Integrated Products		Original	PDF
DS2016R-100+	Maxim Integrated Products	2k x 8 3V/5V Operation Static RAM	Original	PDF
DS2016R-100+	Maxim Integrated Products	IC SRAM CHIP ASYNC SINGLE 3.3 5V 16KBIT 2KX8 100NS 24SOIC	Original	PDF

DS2016 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DS2016 Abstract: DS2016R DS2016S SEPTEMBER10 Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: September 10, 1999 Product Change Notice – I91501 Subject: Package Obsolescence - DS2016S 2K x 8 3V/5V Operation Static RAM Description of Change: Effective October 30, 1999, Dallas Semiconductor will no longer produce or sell the DS2016S 2K	Original	PDF	I91501 DS2016S DS2016S DS2016S. DS2016 DS2016R. DS2016R SEPTEMBER10
DS2016 Abstract: DS2016-100 DS2016-150 DS2016R DS2016S Text: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES § § § § § § § § § § § Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V	Original	PDF	DS2016 DS2016 24-pin application15 DS2016S DS2016-100 DS2016-150 DS2016R
DS2016S Abstract: DS2016S-100 DS2016 Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: February 28, 1996 Subject: PRODUCT CHANGE NOTICE – B60801 Description: DS2016 200ns to 250ns Change Description of Change: Effective May 1, 1996, the specified 3–volt access time of the DS2016 will change from 200ns to 250ns.	Original	PDF	B60801 DS2016 200ns 250ns 250ns. 100ns DS2016S DS2016S-100
DS2016 Abstract: DS2016-100 DS2016-150 DS2016R DS2016S Text: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V	Original	PDF	DS2016 DS2016 24-pin DS2016S DS2016-100 DS2016-150 DS2016R
DS2016 Abstract: DS2016-100 DS2016-150 DS2016R Text: DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT Low-power CMOS design Standby current - 50nA max at tA = 25°C VCC = 3.0V - 100nA max at tA = 25°C VCC = 5.5V - 1µA max at tA = 60°C VCC = 5.5V	Original	PDF	DS2016 100nA DS2016-100 100ns DS2016-150 150ns 250ns DS2016 DS2016-100 DS2016-150 DS2016R
DALLAS SEMICONDUCTOR Ds1235 Abstract: megatest tester DS1235 ds1630 megatest tester datasheet DS2237 DS1217 dallas ds1230 DS1220 ON SEMICONDUCTOR TRACEABILITY Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 05/24/97 Subject: PRODUCT CHANGE NOTICE - E71301 Description: Tester Change for DS2016, DS2064, DS2068, and DS2257	Original	PDF	E71301 DS2016, DS2064, DS2068, DS2257 DS2257. DS1217 DALLAS SEMICONDUCTOR Ds1235 megatest tester DS1235 ds1630 megatest tester datasheet DS2237 DS1217 dallas ds1230 DS1220 ON SEMICONDUCTOR TRACEABILITY
DS2016 Abstract: DS2016S Text: DS2016 DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current – 50 nA max at tA = 25°C VCC = 3.0V – 100 nA max at tA = 25°C VCC = 5.5V – 1 µA max at tA = 60°C VCC = 5.5V • Full operation for VCC = 5.5V to 2.7V	Original	PDF	DS2016 DS2016 DS2016S
DS2016 Abstract: DS2016S Text: DS2016 DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current – 50 nA max at tA = 25°C VCC = 3.0V – 100 nA max at tA = 25°C VCC = 5.5V – 1 µA max at tA = 60°C VCC = 5.5V • Full operation for VCC = 5.5V to 2.7V	Original	PDF	DS2016 DS2016 DS2016S
DS2016 Abstract: DS2016-100 DS2016R Text: DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT Low-power CMOS design Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V	Original	PDF	DS2016 100nA DS2016-100 100ns 250ns 24-pin DS2016 100pF DS2016-100 DS2016R
Untitled Abstract: No abstract text available Text: DS90LT012AH DS90LT012AH High Temperature 3V LVDS Differential Line Receiver Literature Number: SNLS199 DS90LT012AH High Temperature 3V LVDS Differential Line Receiver General Description Features The DS90LT012AH is a single CMOS differential line receiver designed for applications requiring ultra low power	Original	PDF	DS90LT012AH DS90LT012AH SNLS199
Untitled Abstract: No abstract text available Text: LM4846 Output Capacitor-less Audio Subsystem with Programmable National 3D General Description Key Specifications The LM4846 is an audio power amplifier capable of delivering 500mW of continuous average power into a mono 8Ω bridged-tied load BTL with 1% THD+N, 25mW per channel	Original	PDF	LM4846 500mW 32-step
dubilier capacitor Abstract: CORNELL DUBILIER CAPACITOR Text: LM2717-ADJ Dual Step-Down DC/DC Converter General Description Features The LM2717-ADJ is composed of two PWM DC/DC buck step-down converters. Both converters are used to generate an adjustable output voltage as low as 1.267V. Both also feature low RDSON (0.16Ω) internal switches for maximum	Original	PDF	LM2717-ADJ 300kHz 600kHz 24-lead dubilier capacitor CORNELL DUBILIER CAPACITOR
SMPS pcb CIRCUIT diagram Abstract: No abstract text available Text: LP3879 Micropower 800mA Low Noise "Ceramic Stable" Voltage Regulator for Low Voltage Applications General Description Features The LP3879 is a 800 mA fixed-output voltage regulator designed to provide high performance and low noise in applications requiring output voltages between 1.0V and	Original	PDF	LP3879 800mA SMPS pcb CIRCUIT diagram
L4946SQ Abstract: No abstract text available Text: LM4946 Output Capacitor-Less Audio Subsystem with Programmable National 3D General Description Key Specifications The LM4946 is an audio power amplifier capable of delivering 540mW of continuous average power into a mono 8Ω bridged-tied load BTL with 1% THD+N, 35mW per channel	Original	PDF	LM4946Output LM4946 540mW 32-step L4946SQ

VI05 Abstract: DS2016 DS2016-100 DS2016S Text: DS 2016 DALLAS s e m ic o n d u c to r DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low pow er C M OS design • S tandby current A7 C 1 24 □ VCC A6 C 2 ^ 23 □ A8 A9 - 50 nA m ax at tA = 25°C V Cc = 3.0V A5 C 3 22 □ - 100 nA max at tA = 25°C V Cc = 5.5V	OCR Scan	PDF	DS2016 24-pin DS2016S VI05 DS2016 DS2016-100
Untitled Abstract: No abstract text available Text: DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT 50 nA max at tA = 25°C Vc c = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V 1 nA max at tA = 60°C VCc = 5.5V • Full operation for Vcc = 5-5V to 2.7V • Data Retention Voltage = 5.5V to 2.0V	OCR Scan	PDF	DS2016 24-pin DS2016S
Untitled Abstract: No abstract text available Text: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current - 50 nA max at tA = 25°C VCc = 3.0V - 100 n A m a x at tA = 25°C V GG = 5.5V - 1 \|uA max at tA = 60°C Vc c = 5.5V	OCR Scan	PDF	DS2016 DS2016 100ns 150ns 24-PIN
Untitled Abstract: No abstract text available Text: DS2016. DS2016S DALLAS SEMICONDUCTOR DS2016, DS2016S 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design A7 • Standby current A6 C 1 C 2 ASH 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at t* = 25°C Vcc = 5.5V 1 jA max at t* = 60°C Vcc = 5.5V	OCR Scan	PDF	DS2016. DS2016S DS2016, 24-PIN
Untitled Abstract: No abstract text available Text: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at tA = 25°C Vc c = 5.5V 1 nA max at tA = 60°C V cc = 5.5V • Full operation for V cc = 5.5V to 2.7V	OCR Scan	PDF	DS2016 DS2016 DS2016S 24-PIN
Untitled Abstract: No abstract text available Text: DALLAS SEMICONDUCTOR DS2016 2 k x 8 3 V/5V Operation Static RAM PIN ASSIGNMENT FEATURES • Low-power CMOS design ■ Standby current - 50 nA max at îa = 25°C Vcc = 3.0V - 100 nA max at îa = 25°C V c c = 5.5V - 1 \|^A max at tA = 60°C VCc = 5.5V ■ Full operation for V Cc = 5.5V to 2.7V	OCR Scan	PDF	DS2016 DS2016 24-pin DS2016S
Untitled Abstract: No abstract text available Text: DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CM OS design • Standby current A7 C 1 24 □ VCC A6 E 2 23 □ A8 A9 - 50 nA m ax at tA = 25°C VCc = 3.0V A5 C 3 22 □ - 100 nA max at tA = 25°C VCc = 5.5V	OCR Scan	PDF	DS2016 DS2016S 24-PIN 24-PIN
Untitled Abstract: No abstract text available Text: DALLAS SEMICONDUCTOR DS2016 2K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current 50 nA max at tA = 25°C Vcc = 3.0V 100 nAmaxat tA = 25°C VCc = 5.5V 1 mA max at tA = 60°C VCc = 5.5V • Full operation for Vcc = 5-5V to 2.7V	OCR Scan	PDF	DS2016 tbl4130 DS2016S 24-PIN 24-PIN 1413D
Untitled Abstract: No abstract text available Text: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current A7 G 1 24 J A6G 2 23 □ AS 3 22 □ A9 WE v cc - 50 nA max at tA = 25°C V cc = 3.0V - 100 nA max at tA = 25°C VCc = 5.5V	OCR Scan	PDF	DS2016 DS2016 DS2016S 24-PIN
Untitled Abstract: No abstract text available Text: DS2016, DS2016S DALLAS SEMICONDUCTOR DS2016, DS2016S 2K x 8 3V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current 50 nA max at tA = 25°C VCc = 3.0V 100 nA max at tA = 25°C Vcc = 5.5V 1 \|iA max at tA = 60°C Vcc = 5.5V	OCR Scan	PDF	DS2016, DS2016S DS2016S applicat62 DS2016. 24-PIN

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