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    DS1230Y-200 DALLAS Search Results

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    25814

    Abstract: No abstract text available
    Text: RELIABILITY MONITOR DS1230Y-200 APR '00 Monitor DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 B1-Y 0005 720 118511 28 Module w/SMT Fastech JOB_NO DESCRIPTION CONDITION 25412 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 25413 PHYSICAL DIMENSIONS MIL-STD-883-2016


    Original     		PDF DS1230Y-200 DS1230 MIL-STD-883-2003 MIL-STD-883-2016 60C/90% DS1230AB-200 DS5000T DS5000 25814

    P2215

    Abstract: P22102 P22372 P22121 40Pn B1 9742 P22071 dallas date code ds1230 208mil P22403
    Text: RELIABILITY MONITOR STRESS: TEMP CYCLE CONDITIONS: -40 TO 85°C MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE READ POINT QTY FAIL DS2250T Y JUN 98 P22125 9814 DALLAS 101397 SIP STICK 100 11 DS2250T Y JUN 98 P22125 9814 DALLAS


    Original     		PDF DS2250T P22125 DS1210 DS1210S P2215 P22102 P22372 P22121 40Pn B1 9742 P22071 dallas date code ds1230 208mil P22403

    DS1230

    Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
    Text: 2000-12-22 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-766-01 DS1230Y 256k NV SRAM DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the


    Original     		PDF DS1230Y DS1230Y/AB DS1230Y) DS1230AB) DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y-100 DS1230Y-85 DS9034PC

    28256 eeprom

    Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
    Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM


    Original     		PDF DS1230Y/AB DS1230YL/ABL DS34PIN 28256 eeprom DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB

    DS1230

    Abstract: DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC
    Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE • Low–power CMOS A2 8 21 A10 A1 9 20 CE • Read and write access times as fast as 70 ns


    Original     		PDF DS1230Y/AB DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC

    EEPROM 28256

    Abstract: DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC ADS1230
    Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE • Low–power CMOS A2 8 21 A10 A1 9 20 CE • Read and write access times as fast as 70 ns


    Original     		PDF DS1230Y/AB EEPROM 28256 DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC ADS1230

    DS1230

    Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC

    DS1230Y-120-IND

    Abstract: DS1230Y-85
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin 56-G0003-001A1 DS1230YP-100 DS1230YP-70IND DS1230Y-120-IND DS1230Y-85

    DS1233 a5

    Abstract: e8 sot223 9915 dallas 25010 DN819 densit DS1232L ds1232l datasheet DS1869 DK815282AAB
    Text: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY DATE PRODUCT REV JOB NO CODE FACILITY LOT NO. DS1621 A7 JUN '99 24325 9915 ATP Anam, PI DK815282AAB SOIC 50 45 DS1621 A7 SEP '99 24466 9930 ATP (Anam, PI) DK906731AAC SOIC


    Original     		PDF DS1621 DK815282AAB DK906731AAC DS1869 DJ821534ABB DJ824252AAC DJ824247ABA DS1233 a5 e8 sot223 9915 dallas 25010 DN819 densit DS1232L ds1232l datasheet DS1869

    fds5002

    Abstract: dallas E8 24715
    Text: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. DS1621 A7 JUN '99 24325 9915 ATP Anam, PI DK815282AAB SOIC 50 45 DS1621 A7 SEP '99 24466 9930 ATP (Anam, PI) DK906731AAC SOIC


    Original     		PDF DS1621 DS1869 DK815282AAB DK906731AAC DJ821534ABB DJ824252AAC DJ824247ABA fds5002 dallas E8 24715

    DS1230

    Abstract: EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230 EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of VCc A14 • Data is automatically protected during the decrease in Vcc at power loss A12 • Directly replaces 32K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1230Y/AB 28-pin 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc • Data is automatically protected during the decrease in V cc at power loss A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4


    OCR Scan     		PDF DS1230Y/AB 28-pin 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile


    OCR Scan     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin 68-pin packag02 DS1230Y/AB 34-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of Vcc A14 11 1 A12 I1 2 A7 I1 3 A6 I1 4 A5 I1 5 A4 I1 6 A3 I1 7 A2 I1 8 • Data is automatically protected during the decrease in Vcc at power loss


    OCR Scan     		PDF DS1230Y/AB 1230Y/A DS1230Y/AB 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or


    OCR Scan     		PDF DS1230Y/AB

    28256 eeprom

    Abstract: EEPROM 28256 DS1230Y-200 DALLAS 28256 DS1230 DS1230AB DS1230Y
    Text: DALLAS SEMICONDUCTOR CORP sbimao 3^E D 00G34DS a h d a l - T '^ 'Z 3 -V 7 ” DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN DESCRIPTION • Data retention in the absence of Vcc • Data Is automatically protected during the de­ crease in ^cc at power loss


    OCR Scan     		PDF DS1230Y/AB 28-pin 100ns, 120ns, 150ns, 200ns DS1230 28256 eeprom EEPROM 28256 DS1230Y-200 DALLAS 28256 DS1230AB DS1230Y

    28256 eeprom

    Abstract: No abstract text available
    Text: D S 1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of V qC • Data is automatically protected during the decrease in Vc c at power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF 1230Y/AB 28-pin DS1230Y/AB DS1230Y/AB 28256 eeprom

    1230Y

    Abstract: No abstract text available
    Text: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile


    OCR Scan     		PDF 1230Y/A DS1230Y/AB DS1230Y) DS1230AB) 2bl4130 013S3t S1230Y/AB DS1230YL/ABL 34-PIN DS34P 1230Y

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or


    OCR Scan     		PDF DS1230Y/AB

    1230Y

    Abstract: DALLAS SEMICONDUCTOR Ds1230
    Text: D S 1230Y/A B DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT A14 11 1 281 A12 112 2711WE A7 113 2611A13 A6 114 2511A8 A5 11 5 2411A9 A4 11 6 2311A11 A3 11 7 2211ÔË A2 118 21 11A10 A1 119 201I ^ A0 11 10 1911DQ7 DQO11 11 1811DQ6


    OCR Scan     		PDF 1230Y/A DS1230Y) DS1230AB) 28-pin 1230Y DS1230Y/AB 34-PIN DALLAS SEMICONDUCTOR Ds1230

    DALLAS SEMICONDUCTOR Ds1230

    Abstract: dallas ds1230 EEPROM 28256 1230Y 34-PIN DS1230 DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS
    Text: DS 1230Y/A B DALLAS DS1230Y/AB SEM ICON DUCTOR FEATURES 256K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I1 A7 I1 A6 I1 A5 I1 A4 I1


    OCR Scan     		PDF DS1230 DS1230Y/AB DS1230Y) DS1230AB) 28-pin 2bl4130 DS1230YL/ABL 34-PIN 68-pin DALLAS SEMICONDUCTOR Ds1230 dallas ds1230 EEPROM 28256 1230Y DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS

    28256 eeprom

    Abstract: dallas date code FOR DS1230Y EEPROM 28256 QS257 28256 DS1230AB A14C DS1230Y
    Text: DALLAS SEMI CO NDUC TO R CORP GTE D | SblMlBG □□□55SG □ | ¡1 Dallas Semiconductor w 2 S 6 K N onvolatiie SRAM FEATURES ra iU M G M IiW PIN CO N N EC TIO N S • Data retention in the absence o f V cc • Data is autom atically protected dur­ ing power loss


    OCR Scan     		PDF 5L1413D 0DG52SD -23-lt-f DS1230Y DS1230AB 28-pin 100pF QS257 DS1230A3 28256 eeprom dallas date code FOR DS1230Y EEPROM 28256 28256 DS1230AB A14C

    Untitled

    Abstract: No abstract text available
    Text: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe


    OCR Scan     		PDF DS1230Y) DS1230AB)