DS100260 Search Results

DS100260 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
national semiconductor databook Abstract: 54ACT08 DIODE DATABOOK 54AC08 54ACTQ08 AC08 E20A J14A W14B SMD DATABOOK Text: 54AC08 Quad 2-Input AND Gate n Standard Microcircuit Drawing SMD 5962-87615 n 54AC08 now qualified to 300Krad RHA designation, refer to the SMD for more information n For Military 54ACT08 device, see 54ACTQ08 General Description The ’AC08 contains four, 2-input AND gates.	Original	PDF	54AC08 54AC08 300Krad 54ACT08 54ACTQ08 DS100260 national semiconductor databook DIODE DATABOOK 54ACTQ08 AC08 E20A J14A W14B SMD DATABOOK
54ACT08 Abstract: 54AC08 54ACTQ08 AC08 E20A Text: 54AC08 Quad 2-Input AND Gate General Description Features The ’AC08 contains four, 2-input AND gates. n n n n ICC reduced by 50% Outputs source/sink 24 mA Standard Microcircuit Drawing SMD 5962-87615 For Military 54ACT08 device, see 54ACTQ08 Logic Symbols	Original	PDF	54AC08 54ACT08 54ACTQ08 DS100260-1 DS100260-3 DS100260-2 DS100260 54AC08 Condition959 54ACTQ08 AC08 E20A
IXTH16N20D2 Abstract: 16n20 16N20D2 ixtt16n20d2 Text: Advance Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH16N20D2 IXTT16N20D2 O-247 O-247) O-268 100ms Impedance10 IXTH16N20D2 16n20 16N20D2 ixtt16n20d2
Untitled Abstract: No abstract text available Text: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous	Original	PDF	IXTT16N20D2 IXTH16N20D2 O-268 062in. O-247) O-247 100ms
IXTT16N20D2 Abstract: 16n20 IXTH16N20D2 16N20D2 40810 Text: Preliminary Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH16N20D2 IXTT16N20D2 O-247 O-268 O-247) O-247 100ms Impedance10 IXTT16N20D2 16n20 16N20D2 40810
Untitled Abstract: No abstract text available Text: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous	Original	PDF	IXTT16N20D2 IXTH16N20D2 O-268 062in. O-247) O-247 100ms