Untitled
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Text: F-213-1 26-JUL-13 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR (0,80 mm) .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER SPECIFICATIONS Board Mates: ERF8 For complete specifications and recommended PCB layouts see
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F-213-1
26-JUL-13)
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Untitled
Abstract: No abstract text available
Text: F-213-1 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80 mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER SPECIFICATIONS Board Mates: ERF8 For complete specifications and recommended PCB layouts see
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F-213-1
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Untitled
Abstract: No abstract text available
Text: F-211-1 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER Board Mates: ERF8 SPECIFICATIONS For complete specifications and recommended PCB layouts see
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23ting
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erm8
Abstract: No abstract text available
Text: F-212 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER SPECIFICATIONS Board Mates: ERF8 For complete specifications and recommended PCB layouts see
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F-212
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Untitled
Abstract: No abstract text available
Text: F-211-2 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER Board Mates: ERF8 SPECIFICATIONS For complete specifications and recommended PCB layouts see
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F-211-2
NEXUS5001â
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po111
Abstract: 3773 transistor voltage diagram BCP56 LM7805 PTFA041501GL PTFA041501HL infineon gold
Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They
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PTFA041501GL
PTFA041501HL
PTFA041501GL
PTFA041501HL
150-watt
PG-64248-2
IS-95
po111
3773 transistor voltage diagram
BCP56
LM7805
infineon gold
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roger
Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and
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PTF041501E
PTF041501F
150watt,
CDMA2000
H-30260-2
H-31260-2
roger
H-30260-2
LM7805
ceramic capacitor 103 z 21
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po111
Abstract: LM7805 LM780
Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They
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PTFA041501GL
PTFA041501HL
PTFA041501HL
150-watt
PG-63248-2
PG-64248-2
IS-95
po111
LM7805
LM780
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DS 469 ADJ
Abstract: type 103 capacitor, 2kv RF
Text: PTF040551E PTF040551F Thermally Enhanced High Power RF LDMOS FETs 55 W, 450 – 500 MHz Description The PTF040551E and PTF040551F are thermally-enhanced, 55-watt, internally matched GOLDMOS FETs intended for CDMA applications in the 450 to 500 MHz band. Full gold metallization ensures excellent device
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PTF040551E
PTF040551F
55-watt,
PTF040551F*
IS-95
DS 469 ADJ
type 103 capacitor, 2kv RF
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SCHEMATIC DIAGRAM 3.3kv
Abstract: BCP56 LM7805 PTF041501E PTF041501F ceramic capacitor 103 z 21
Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characaterized for CDMA and
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PTF041501E
PTF041501F
PTF041501E
PTF041501F
150watt,
CDMA2000
IS-95
SCHEMATIC DIAGRAM 3.3kv
BCP56
LM7805
ceramic capacitor 103 z 21
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PDF
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PTFA041501E
Abstract: BCP56 LM7805 PTFA041501F R250 LM7805 voltage regulator packages
Text: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.
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PTFA041501E
PTFA041501F
PTFA041501E
PTFA041501F
150-watt
H-36248-2
H-37248-2
IS-95
BCP56
LM7805
R250
LM7805 voltage regulator packages
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PDF
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Untitled
Abstract: No abstract text available
Text: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.
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PTFA041501E
PTFA041501F
PTFA041501E
PTFA041501F
150-watt
H-36248-2
H-37248-2
IS-95
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PDF
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PTFA041501E
Abstract: BCP56 LM7805 PTFA041501F R250 IM335 resistor 33k ohms
Text: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.
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Original
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PTFA041501E
PTFA041501F
PTFA041501E
PTFA041501F
150-watt
H-36248-2
H-37248-2
IS-95
BCP56
LM7805
R250
IM335
resistor 33k ohms
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ULTRA THIN CARD EDGE CONNECTOR OF SERIES 235
Abstract: 245-21-XXXCE-XX m42x M42X-03-XXX-X 275-00-XXXDSX-XX methode board edge connectors usa lead
Text: .050" 1.27mm Series 235 Ultra Thin Card Edge Connector DIP SOLDER TERMINALS WITHOUT MOUNTING EARS PART NUMBER LEGEND 235-21-XXXDS-XX PLATING OPTIONS 01 = .000010 GOLD IN CONTACT AREA OVER NICKEL WITH GOLD FLASH TAILS. 03 = .000030 GOLD IN CONTACT AREA OVER NICKEL WITH
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235-21-XXXDS-XX
ULTRA THIN CARD EDGE CONNECTOR OF SERIES 235
245-21-XXXCE-XX
m42x
M42X-03-XXX-X
275-00-XXXDSX-XX
methode board edge connectors
usa lead
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SCHB
Abstract: No abstract text available
Text: TECHNICAL DATA COAXIAL CONNECTORS FLANGE RECEPTACLE FOR .011 DIA WITH SPECIAL GASKET EMI 0 .2 9 7 * .0 0 2 7 ,5 5 * 0 .0 5 R125.941.000 Series : SMA 1 IS: 012 .061 Œ I Page Is s u e : 0746 A '(1.55: CL cu O -—. ÍD O o *£ s 1—( a a> C—Í -p rK CD -ft
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Untitled
Abstract: No abstract text available
Text: /T T SCS-THOMSON SGSP316 SGSP317 “ TÆ . s s o m m i C T i M « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSs ^DS on 'd SGSP316 SGSP317 250 V 200 V 1.2 fl 0.75 fi 5A 6A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE
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SGSP316
SGSP317
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Untitled
Abstract: No abstract text available
Text: bq3287E/bq3287EA fe j BENCHMARQ Real-Time Clock RTC Module Features >• Direct clock/calendar replacement for IBfti AT-compatible computers and other applications >• Functionally compatible with the DS1287/DS1287A and MC146818A/MC146818B >• 242 bytes of general nonvolatile
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bq3287E/bq3287EA
DS1287/DS1287A
MC146818A/MC146818B
768kHz
D003M74
bq3287E
137flfln
000347S
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Untitled
Abstract: No abstract text available
Text: 1994 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR MECHANICAL DIMENSIONS FOR BRIDGE RECTIFIERS /469 REV.- DIMENSIONS MM INCHES LETTER MAX MIN MIN MAX C1 .367 .375 9.32 9.53 C2 .350 .450 8.89 11.43 C3 .175 .225 4.45 5.72 4>D 1 .139 .149 3.53 3.78 2.57 4>D2 .091
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BUK107-50GL PowerMOS transistor Logic level TOPFET For maintenance only. Do not use for design-in. DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as
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BUK107-50GL
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Untitled
Abstract: No abstract text available
Text: cnr S6E SEMTECH CORP D 5 m 613^13^ 0DG322M Tb? « S E T 30 AMP, 400 WATT POSITIVE HYBRID VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PARAMETER In p u t Voltage In p u t-O u tp u t V oltage D iffe re ntia l P ow er D is s ip a tio n 1 SYM BOL MAXIMUM UNITS
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0DG322M
DD0322Ã
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b15n06v
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet MTB15N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.12 OHM N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an orv-resistance
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QE-05
0E-04
b15n06v
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D ata S heet TM O S V P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e-ha lf that of standard MOSFETs. This
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OF IC 723 linear regulator
Abstract: No abstract text available
Text: SG723/SG723C -—. _ . 5 |U Ç D N LINEAR INTEGRATED CIRCUITS PRECISION VOLTAGE REGULATOR FEATURES DESCRIPTION This monolithic voltage regulator is designed for use with either positive or negative supplies as a series, shunt, switching, or floating regulator
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SG723/SG723C
150mA.
SG723
SG723C
OF IC 723 linear regulator
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74LS205
Abstract: No abstract text available
Text: / 'K -v 1 DESCRIPTION The MN5500 is a 12 Bit A/D Converter designed specifically for microprocessor applications. Internal circuitry is sup plied for chip select, address decoding, and the other inter face signals required by popular microprocessors. In most
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MN5500
conver02
MN2020
74LS175
74LS00
74LS02
74LS04
74LS20
74LS205
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