Untitled
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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DS 1251C
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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FDMS3686S
FDMS3686S
DS 1251C
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Untitled
Abstract: No abstract text available
Text: FDMS3606S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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FDMS3606S
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1201D
Abstract: No abstract text available
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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FDMS3664S
FDMS3664S
1201D
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fdms3660s
Abstract: 501B 8 P
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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FDMS3660S
FDMS3660S
501B 8 P
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22CF21CD
Abstract: 11-CQ2 22cF
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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FDMS3668S
FDMS3668S
22CF21CD
11-CQ2
22cF
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9acf
Abstract: 9acf 21cd FDMS3669S
Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 10 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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FDMS3669S
FDMS3669S
9acf
9acf 21cd
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c1251c
Abstract: ic ls46a
Text: IRFS840A A dvanced Power MOSFET FEATURES b v dss - 500 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance _p ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA(Max.) @ VDS = 500V
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IRFS840A
c1251c
ic ls46a
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D751
Abstract: AD751 AD7510DI AD7511 AD7511DI slma
Text: — 250 — AD7510DI, A D 7 5 1 1 DI, AD751 2DI d i- c m o s 7 tp y -x > i A D • « « È < j! |# tt V iu > = + 1 5 V , F SS= - 1 5 V , Ta= 25V. PI pö '¡ë ^ J .K ^ U - F ^ S 'J' rDS(ON)* r DSi ON)"^ y ^ds(on) H U *7 h rosioN) H U 7 b<7)H /skOFF)* 7'mm < T a^ T mux
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AD751
AD7511
AD7510DIS,
AD7511DIT,
AD7512DIT
AD7510DI
AD7511DI
D751
AD7510DI
AD7511DI
slma
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schematic diagram tv sharp
Abstract: tv schematic diagram SHARP tv schematic diagram SHARP power supply schematic diagram 200v dc voltage regulator sharp tv schematic diagram schematic tv sharp HX 711 sharp tv power supply section circuit diagram TV SHARP Schematic Power Supply power supply schematic diagram sharp
Text: NEW PRODUCT INFORMATION Primary Regulator PQ1PF1 O U T LIN E D IM E N S IO N S G E N E R A L D E S C R IP T IO N U n it : m m Sharp's PQ 1PF1 achieved an integration o f power M O SFET and control IC, used for primary sid e o f sw itch in g p ow er su p p lies. T h is d e v ic e m eets the n eed for m ore
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O-220
K22080
ECN-95041
schematic diagram tv sharp
tv schematic diagram SHARP
tv schematic diagram SHARP power supply
schematic diagram 200v dc voltage regulator
sharp tv schematic diagram
schematic tv sharp
HX 711
sharp tv power supply section circuit diagram
TV SHARP Schematic Power Supply
power supply schematic diagram sharp
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c1251c
Abstract: c-1251C *c1251c
Text: IRLS620A Advanced Power MOSFET FEATURES bvdss • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 u A M a x @ VOS= 200V ■ Lower RDS(on) ■' 0.609 £2 (Typ.)
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IRLS620A
c1251c
c-1251C
*c1251c
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m2817a
Abstract: 16K Electrically Erasable PROMs
Text: E/M2817A Timer E2 16K Electrically Erasable PROMs October 1989 Features Description • Military and Temperature Range • -55° C to + 1251C: M2817A Military • -4 0 0 C to +85° C: E2817A (Extended) SEEQ’s M2817A is a 5 Vonly, 2Kx 8 electrically erasable
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E/M2817A
1251C:
M2817A
E2817A
M2817A
MD400015/B
16K Electrically Erasable PROMs
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*c1251c
Abstract: TC100LC
Text: IRFS450A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA M ax. @ VDS= 500V
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IRFS450A
100lC)
*c1251c
TC100LC
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Untitled
Abstract: No abstract text available
Text: SOLID-ELECTROLYTE TANTALUM CAPACITORS MATSUO TYPE TANCHIP SERIES A CAUTIONS 281 •This capacitor is polarized, do not apply reverse voltage. •The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please
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/1000h
150pF
220pF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { D I S C R E T E / O P T 0> ^ 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR TECHNICAL DATA 99D DE j t u t r-diiU □□lL.T4cf O 16949 D T -M 3-ÄS- TOSHIBA GTR MODULE MG 1 0 G 4 G M 1 SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.
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VQS--10V
EGA-MG10G4GM1-4
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Untitled
Abstract: No abstract text available
Text: Fairchild Imaging Sensors Se n s o r s PRELIMINARY CCD192 6000 Element Linear Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 6000 x 1 photosite array 10/jm x 7 f i m photosites on 10pm pitch Anti-blooming and integration control Enhanced resolution In the red region
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CCD192
10/jm
CCD192
CCD192DC
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547 MOSFET
Abstract: *c1251c
Text: SSP1N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss ” 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jjA Max. @ VOS= 500V
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SSP1N50A
547 MOSFET
*c1251c
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MA1040
Abstract: ma1050 1SS202
Text: 1 Introduction We at Shindengen have devoted much time and This manual is meant to give the user a fuller energy to produce the MAI 000 Series of Power understanding of the functions of the MAI 000 Modules Series for switching power supplies. This its electric
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AD751
Abstract: AD7511DIS oc07 AD7510DI AD7511 AD7511DI AD7512DI
Text: -249 A D 7 5 1 0 D I , A D 7 5 1 1 D I, A D 7 5 1 2 D I d i - c m o s T T O ' y - X ' í I * * ! £ « A - y c c —G N D V ss-G N D M M B ^ ± 25V A D 7 5 1 0 D I t A D 7 5 1 1 D I t ± í ' t7 y L T l '-?>. F S P S T # ¡ S f f i 7 t n ^ - x - í -y ^ T r ,
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AD751
AD7511
AD7512DI
AD7510DI
AD7511DI
-oc07
AD7512DI
175C2max
AD7510DI
AD7511DI
AD7511DIS
oc07
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7805F VR
Abstract: 7812F VR 7805F 7815F VR 7812F N7815 7815F 7818F 7818F VR AN7800
Text: Panasonic Voltage Regulators A N7800/A N 7800F Series 3-pin Positive Output Voltage Regulators 1A Type • Overview T he A N 7800 series and the A N 7800F series are 3-pin fixed positive output voltage regulators. Stabilized fixed output voltage is obtained from unstable DC input voltage
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AN7800/AN7800F
AN7800
AN7800F
AN7805
7805F VR
7812F VR
7805F
7815F VR
7812F
N7815
7815F
7818F
7818F VR
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SH60C
Abstract: No abstract text available
Text: y»'y, <m |k • »-' 1SPEC No. I E L 0 8 X 1 0 8 ISSUE: Nov IS 1996 To S P Product Type E C I F I C A T I O N S 4 M D R A M ( 1 M x 4 b i t L H 6 B 4 4 0 0 B K —6 lodel No. (LH6B4B6K) XThis specifications contains 26 pages including the cover and appendix.
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SOJ2I/2B-P-300
AA1146
SH60C
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Used Electronics
Abstract: No abstract text available
Text: KA340TXX FIXED VOLTAGE REGULATOR {POSITIVE 3-TERMINAL1A POSITIVE VOLTAGE REGULATORS TO-220 The KA340TXX series of three-terminal positive voltage regulators are available in TO-220 package and with several fixed output vo ltages, providing better performance than 78XX series regulators.
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KA340TXX
KA340TXX
O-220
O-220
120Hz,
Used Electronics
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Untitled
Abstract: No abstract text available
Text: KA340TXX Industrial 3-TERMINAL 1A POSITIVE VOLTAGE REGULATORS TO-220 The KA340XX series ot three.terminai positive voltage regulators are available in T0-220 package and with several fixed output voltages, providing better performance than 78XX series regulators
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KA340TXX
O-220
KA340XX
T0-220
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Untitled
Abstract: No abstract text available
Text: GENERAL AND APPLICATION INFORMATION IN T R O D U C IN G T H E LO W VOLTAG E LOG IC FAMILIES. III Low Power Dissipation: - Better than High Speed logic families. T oday’s portable and battery-operated system designer is faced with the problem of keeping
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