XAPP416
Abstract: RAMB16s RAMB16 XC2V40 DOB10 DOB20
Text: Application Note: Virtex-II Family R XAPP416 v1.0 August 7, 2002 Using an RPM Grid Macro to Control Block RAM-to-FF Timing Author: Bret Wade Summary This application note describes an alternative method for specifying Relatively Placed Macros (RPMs) using a new grid system called the "RPM Grid". This grid system can be used in the
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XAPP416
700ns
686ns
646ns
659ns
668ns
XAPP416
RAMB16s
RAMB16
XC2V40
DOB10
DOB20
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16 BIT SHIFT REGISTER
Abstract: SED2000F DOD15 16-bit shift register DOB10 DOB12 SED2000FOA SED2000FOB 40 bit shift register vfd DOD16
Text: SED2000FOA/OB PLASMA-DISPLAY/VFD ANODE DRIVER • DESCRIPTION The SED2000FOA/OB is a CMOS LSI dot-matrix plasma-display VFD anode driver. It has 64 high-voltage outputs in 4 x 16 blocks. The SED2000FOA/OB has independent serial inputs and outputs for each 16-element block which feature data
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SED2000FOA/OB
SED2000FOA/OB
16-element
SED2000FOA
SED2000FOB
80-pin
DOA10
DOB10
DOC10
16 BIT SHIFT REGISTER
SED2000F
DOD15
16-bit shift register
DOB10
DOB12
40 bit shift register vfd
DOD16
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led 7 doan
Abstract: SED2000FVB datasheet led 7 doan SED2000FVA SED2000F S-MOS Systems SED2020 DOG12 A37 diode G38 transistor
Text: SED2000 CMOS VFD Driver Technical Manual S-MOS Systems, Inc. October, 1996 Version 1.0 Preliminary 330-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238 1 – THIS PAGE INTENTIONALLY BLANK
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SED2000
led 7 doan
SED2000FVB
datasheet led 7 doan
SED2000FVA
SED2000F
S-MOS Systems
SED2020
DOG12
A37 diode
G38 transistor
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SED2800FVA
Abstract: DOH17 SED2800F 405 mo river flows in you S-MOS SYSTEMS INC DOA10
Text: Data Sheet GRAPHICS SED2800FVA December 1996 SED2800FVA CMOS VFD DRIVER • Description The SED2800FVA is a CMOS LSI dot-matrix vacuum fluorescent display anode and grid driver. It has 40 high-voltage anode outputs and 40 high-voltage grid outputs in 2 x 20
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SED2800FVA
SED2800FVA
100-pin
DOH17
SED2800F
405 mo
river flows in you
S-MOS SYSTEMS INC
DOA10
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SED2000FVB
Abstract: 20 Bit Shift Register DOG12 DOG2 SED2000F DOG20 DOA17 display pinout 66 block DOG19 20-element
Text: SED2000FVB CMOS VFD DRIVER • DESCRIPTION The SED2000FVB is a CMOS LSI dot-matrix vacuum fluorescent display anode and grid driver. It has 40 high-voltage anode outputs in 2 x 20 blocks and 20 high-voltage grid outputs. The SED2000FVB has independent serial inputs and outputs for each 20-element block which feature data
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SED2000FVB
SED2000FVB
20-element
80-pin
DOB12
DOB11
DOB10
DOA20
20 Bit Shift Register
DOG12
DOG2
SED2000F
DOG20
DOA17
display pinout 66 block
DOG19
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Untitled
Abstract: No abstract text available
Text: 3Mbit 3Ports FIFO MEMORY P/N: MN4795F The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a license for the industrial property rights. When the mounting this device rotated 90 ° or 270° on the board is executed,
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MN4795F
DIN00
DOA00
DOB00
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dog 53
Abstract: SED2000FVB sed2000f dog 11
Text: S E D 2 0 0 0 F vb CMOS VFD DRIVER • DESCRIPTION The SED2000Fvb is a CMOS LSI dot-matrix vacuum fluorescent display anode and grid driver. It has 40 high-voltage anode outputs in 2 x 20 blocks and 20 high-voltage grid outputs. The SED2000Fvb has independent serial inputs and outputs for each 20-element block which feature data
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SED2000Fvb
20-element
80-pin
driv41
DOB20
DOB19
DOB18
DOB17
dog 53
sed2000f
dog 11
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SED2800FVA
Abstract: SED2800F 11 kv vfd S-MOS epson DGG4D33
Text: S-MOS SYSTEMS A Seiko Epson Affiliate December 1996 SED2800FVA CMOS VFD DRIVER • Description The SED2800FVA is a CMOS LSI dot-matrix vacuum fluorescent display anode and grid driver. It has 40 high-voltage anode outputs and 40 high-voltage grid outputs in 2 x 20
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SED2800FVA
20-element
100-pin
CA95134
SED2800F
11 kv vfd
S-MOS epson
DGG4D33
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 4 Mega Byte KMM5401OOOC/CG/CM Fast Page Mode 1Mx40 DRAM SIMM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5401000C is a 1M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5401000C consists of ten CMOS 1Mx4bit DRAMs in 20-pin SOJ packages mounted on
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KMM5401OOOC/CG/CM
1Mx40
KMM5401000C
20-pin
72-pin
KMM5401000C
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SED2000FVA
Abstract: SED2000 SED2000F
Text: SED2000 CMOS VFD Driver Technical Manual S-MOS Systems, inc. October, 1996 Version 1.0 Prelim inary S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 «Tel: (408) 922-0200 • Fax: (408) 922-0238 • 7 T 3 2 T D C1 GOOHOf ci G bGb ■
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SED2000
DOA12
DOB11
DOA11
DOG11
QQQ4Q74
SED2000FVA
SED2000
SED2000F
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sed2000f
Abstract: DOC11 SED2000FOA QFP-80pin DOC12
Text: •¿«I O A /O B PLASMA-DISPLAY/VFD ANODE DRIVER DESCRIPTION The SED2000Foa/ob is a CMOS LSI dot-matrix plasma-display VFD anode driver. It has 64 high-voltage outputs in 4 x 16 blocks. The SED2000Foa/ob has independent serial inputs and outputs for each 16-element block which feature data
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SED2000Foa/ob
16-element
SED2000Foa
SED2000Fob
80-pin
sup10
DOA11
DOB11
DOC11
sed2000f
DOC11
QFP-80pin
DOC12
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DO-D13
Abstract: DOB9 DOA14
Text: S E D 2 0 0 0 F oa/ob PLASMA-DISPLAY/VFD ANODE DRIVER • DESCRIPTION The SED2000Foa/ob is a CM OS LSI dot-matrix plasma-display VFD anode driver. It has 64 high-voltage outputs in 4 x 16 blocks. The SED 2000F oa/ob has independent serial inputs and outputs for each 16-element block which feature data
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SED2000Foa/ob
16-element
SED2000F
80-pin
DOA11
DOB11
DOD11
DOA12
DOB12
DOC12
DO-D13
DOB9
DOA14
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1nt02
Abstract: g110 transistor C618 C134 C144 SA1620 SA1620BE SA1638 400MHZ transceiver DSC1800
Text: INTEGRATED CIRCUITS SA1620 Low voltage GSM front-end transceiver Product specification 1995 Feb 23 IC17 Handbook Philips Semiconductors PHILIPS This Material Copyrighted By Its Respective Manufacturer PHILIPS Philips Semiconductors Product specification Low voltage GSM front-end transceiver
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SA1620
711DflSt)
SA1620
70MHz
500MHz.
711002b
TQFP48:
OT313-1
1nt02
g110
transistor C618
C134
C144
SA1620BE
SA1638
400MHZ transceiver
DSC1800
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