IRLIZ34G
Abstract: SiHLIZ34G SiHLIZ34G-E3
Text: IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V
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IRLIZ34G,
SiHLIZ34G
O-220
18-Jul-08
IRLIZ34G
SiHLIZ34G-E3
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PDF
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SiHLIZ34G
Abstract: IRLIZ34G SiHLIZ34G-E3
Text: IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V
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IRLIZ34G,
SiHLIZ34G
O-220
18-Jul-08
IRLIZ34G
SiHLIZ34G-E3
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PDF
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IRL540
Abstract: SiHL540 SiHL540-E3 IRL540PBF
Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive
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IRL540,
SiHL540
O-220
O-220
18-Jul-08
IRL540
SiHL540-E3
IRL540PBF
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PDF
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IRL540
Abstract: st 8550d SiHL540 SiHL540-E3
Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive
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Original
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IRL540,
SiHL540
O-220
O-220
18-Jul-08
IRL540
st 8550d
SiHL540-E3
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PDF
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SiHLIZ34G
Abstract: IRLIZ34G SiHLIZ34G-E3
Text: IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V
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Original
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IRLIZ34G,
SiHLIZ34G
O-220
11-Mar-11
IRLIZ34G
SiHLIZ34G-E3
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PDF
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zener gdz marking
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives MECHANICAL DATA
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2014-REV
zener gdz marking
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PDF
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Untitled
Abstract: No abstract text available
Text: TLC5928 SBVS120E – JULY 2008 – REVISED JANUARY 2011 www.ti.com 16-Channel, Constant-Current LED Driver with LED Open Detection Check for Samples: TLC5928 FEATURES APPLICATIONS • • • • 1 23 • • • • • • • • • • • 16 Channels, Constant-Current Sink Output
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TLC5928
SBVS120E
16-Channel,
35-mA
10-ns
35-MHz
20-ns
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PDF
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IRL540
Abstract: SiHL540 SiHL540-E3
Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive
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Original
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IRL540,
SiHL540
2002/95/EC
O-220AB
O-220A
11-Mar-11
IRL540
SiHL540-E3
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PDF
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IRL540
Abstract: irl54
Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive
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Original
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IRL540,
SiHL540
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRL540
irl54
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PDF
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IRL540
Abstract: No abstract text available
Text: IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Available • Repetitive Avalanche Rated 0.077 RoHS* • Logic-Level Gate Drive
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Original
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IRL540,
SiHL540
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRL540
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PDF
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Untitled
Abstract: No abstract text available
Text: TLC5928 SBVS120E – JULY 2008 – REVISED JANUARY 2011 www.ti.com 16-Channel, Constant-Current LED Driver with LED Open Detection Check for Samples: TLC5928 FEATURES APPLICATIONS • • • • 1 23 • • • • • • • • • • • 16 Channels, Constant-Current Sink Output
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Original
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TLC5928
SBVS120E
16-Channel,
35-mA
10-ns
35-MHz
20-ns
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PDF
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4C3 zener diode
Abstract: NATIONAL SEMICONDUCTOR MARKING CODE 277 9c1 zener diode zener 6c2 marking code ZENER 5B1 zener diode 5c1 zener diode marking code 6C8 zener 5c1 TLZ10D
Text: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise High reliability Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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Original
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2002/95/EC
2002/96/EC
18-Jul-08
4C3 zener diode
NATIONAL SEMICONDUCTOR MARKING CODE 277
9c1 zener diode
zener 6c2
marking code ZENER
5B1 zener diode
5c1 zener diode
marking code 6C8
zener 5c1
TLZ10D
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PDF
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4C3 zener diode
Abstract: Zener Diode 4C3 zener diode 2v4
Text: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise High reliability AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC
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AEC-Q101
2002/95/EC
2002/96/EC
OD-80
GS18/10K
10K/box
GS08/2
18-Jul-08
4C3 zener diode
Zener Diode 4C3
zener diode 2v4
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PDF
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IRF644PBF
Abstract: IRF644 SiHF644-E3 SiHF644 diode 330
Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration
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IRF644,
SiHF644
O-220
O-220
18-Jul-08
IRF644PBF
IRF644
SiHF644-E3
diode 330
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PDF
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SiHLZ34
Abstract: IRLZ34 SiHLZ34-E3
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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IRLZ34,
SiHLZ34
O-220
O-220
18-Jul-08
IRLZ34
SiHLZ34-E3
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PDF
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IRFIBC30G equivalent
Abstract: IRFIBC30G SiHFIBC30G SiHFIBC30G-E3
Text: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFIBC30G,
SiHFIBC30G
O-220
18-Jul-08
IRFIBC30G equivalent
IRFIBC30G
SiHFIBC30G-E3
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PDF
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IRFI644G
Abstract: SiHFI644G SiHFI644G-E3
Text: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI644G,
SiHFI644G
O-220
18-Jul-08
IRFI644G
SiHFI644G-E3
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PDF
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IRFP264
Abstract: SiHFP264
Text: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP264,
SiHFP264
O-247
O-247
18-Jul-08
IRFP264
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PDF
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IRLZ34
Abstract: SiHLZ34 SiHLZ34-E3
Text: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V
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Original
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IRLZ34,
SiHLZ34
O-220
O-220
18-Jul-08
IRLZ34
SiHLZ34-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP264,
SiHFP264
O-247
O-247
18-Jul-08
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PDF
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IRFIBC30G
Abstract: IRFIBC30G equivalent SiHFIBC30G SiHFIBC30G-E3
Text: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFIBC30G,
SiHFIBC30G
O-220
18-Jul-08
IRFIBC30G
IRFIBC30G equivalent
SiHFIBC30G-E3
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PDF
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4C3 zener diode
Abstract: 5c1 zener diode MArking 3A0 9c1 zener diode 6b2 zener TLZ8V2C Zener Diode 4C3 TLZ10 TLZ10A TLZ10C
Text: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise High reliability Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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Original
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2002/95/EC
2002/96/EC
08-Apr-05
4C3 zener diode
5c1 zener diode
MArking 3A0
9c1 zener diode
6b2 zener
TLZ8V2C
Zener Diode 4C3
TLZ10
TLZ10A
TLZ10C
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PDF
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IRFSL4710
Abstract: AN1001 AN-994 IRFS4710 IRFB4710 SL4710 IRFB4710PBF
Text: PD- 94950 IRFB4710PbF IRFS4710 IRFSL4710 Applications l High frequency DC-DC converters VDSS l Motor Control 100V l Uninterrutible Power Supplies l Lead-Free only the TO-220AB version is currently available in a lead-free configuration Benefits l Low Gate-to-Drain Charge to Reduce
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IRFB4710PbF
IRFS4710
IRFSL4710
O-220AB
AN1001)
O-220AB
O-262
IRFSL4710
AN1001
AN-994
IRFS4710
IRFB4710
SL4710
IRFB4710PBF
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PDF
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zener diode 2v4
Abstract: zener diode 6c2 diode glass 5b6
Text: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise High reliability AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC
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Original
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AEC-Q101
2002/95/EC
2002/96/EC
OD-80
GS18/10K
10K/box
GS08/2
11-Mar-11
zener diode 2v4
zener diode 6c2
diode glass 5b6
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PDF
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