1N3209
Abstract: No abstract text available
Text: 1N3209 100V 15A Std. Recovery Diode In A DO-203AB DO-5 package 4.87 Diodes Si. Page 1 of 1 Enter Your Part # Home Part Number: 1N3209 Online Store 1N3209 Diodes 100V 15A Std. Recovery Diode In A DO-203AB (DO-5) Transistors package Integrated Circuits Optoelectronics
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1N3209
DO-203AB
1N3209
DO-203AB
com/1n3209
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Untitled
Abstract: No abstract text available
Text: VISHAY SEMICONDUCTORS www.vishay.com Rectifiers Application Note Mounting Instructions for DO-203AA / DO-203AB Diodes By Kevin Liu This application note introduces Vishay´s DO-203AA DO-4 and DO-203AB (DO-5) diodes and provides instructions for mounting them to a heat sink.
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DO-203AA
DO-203AB
DO-203AA
DO-203AB
30-Mar-15
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1N6097
Abstract: No abstract text available
Text: 1N6097 thru 1N6098R Naina Semiconductor Ltd. Schottky Power Diode, 50A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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1N6097
1N6098R
DO-203AB
1N6098
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MBR7545
Abstract: No abstract text available
Text: MBR7545 thru MBR75100R Naina Semiconductor Ltd. Schottky Power Diode, 75A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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MBR7545
MBR75100R
DO-203AB
MBR7560
MBR7580
MBR75100
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1N5832
Abstract: No abstract text available
Text: 1N5832 thru 1N5834R Naina Semiconductor Ltd. Schottky Power Diode, 40A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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1N5832
1N5834R
DO-203AB
1N5833
1N5834
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TO-208AA
Abstract: DO-203AB TO208AA scr 16RIA100 DO-205AA DO-8 diode 70HFR60 ST300C12C0 70HFR120 TO208AC scr 106-1
Text: 2015-2012:QuarkCatalogTempNew 9/20/12 5:44 PM Page 2015 25 Diodes, Thyristors and Insulated Gate Bipolar Transistors IGBT 80-90 Amp RoHS DO-203AB (DO-5) INT-A-Pak VFM @ 25°C VRRM @ TC (°C) Package EACH 70079025 70078671 70078674 70078774 70078771 70078775
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DO-204AR
O-247AC
DO-203AB
80SQ045
80EPS12PBF
TO-208AA
DO-203AB
TO208AA
scr 16RIA100
DO-205AA DO-8
diode 70HFR60
ST300C12C0
70HFR120
TO208AC
scr 106-1
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MBR6045
Abstract: No abstract text available
Text: MBR6045 thru MBR60100R Naina Semiconductor Ltd. Schottky Power Diode, 60A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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MBR6045
MBR60100R
DO-203AB
MBR6060
MBR6080
MBR60100
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1N5826
Abstract: No abstract text available
Text: 1N5826 thru 1N5828R Naina Semiconductor Ltd. Schottky Power Diode, 15A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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1N5826
1N5828R
DO-203AB
1N5827
1N5828
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MBR7520
Abstract: No abstract text available
Text: MBR7520 thru MBR7540R Naina Semiconductor Ltd. Schottky Power Diode, 75A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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MBR7520
MBR7540R
DO-203AB
MBR7530
MBR7535
MBR7540
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MBR8020
Abstract: No abstract text available
Text: MBR8020 thru MBR8040R Naina Semiconductor Ltd. Schottky Power Diode, 80A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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MBR8020
MBR8040R
DO-203AB
MBR8030
MBR8035
MBR8040
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MBR8045
Abstract: No abstract text available
Text: MBR8045 thru MBR80100R Naina Semiconductor Ltd. Schottky Power Diode, 80A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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MBR8045
MBR80100R
DO-203AB
MBR8060
MBR8080
MBR80100
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MBR6020
Abstract: No abstract text available
Text: MBR6020 thru MBR6040R Naina Semiconductor Ltd. Schottky Power Diode, 60A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)
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MBR6020
MBR6040R
DO-203AB
MBR6030
MBR6035
MBR6040
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MUR7015
Abstract: ms 0840
Text: MUR7015 SILICON RECTIFIER-VERY FAST SWITCHING PACKAGE STYLE DO-5/D0-203AB DESCRIPTION: The MUR7015 is Designed for General Purpose Very Fast Switching Power Supply Applications. MAXIMUM RATINGS O 70 A AVG @ TC = 125 C IF 150 V VR O O O O TJ -55 C to +175 C
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MUR7015
DO-5/D0-203AB
MUR7015
ms 0840
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40HFL40S02
Abstract: 95HQ015 DO-203AB IRFP460
Text: Bulletin PD-2.272 rev. B 11/02 95HQ015 95 Amp SCHOTTKY RECTIFIER TO-203AB DO-5 Description/ Features Major Ratings and Characteristics Characteristics 95HQ015 Units IF(AV) Rectangular 95 A 15 V IFSM @ tp = 5 µs sine 7500 A VF @ 95 Apk, TJ = 75°C 0.39 V
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95HQ015
O-203AB
95HQ015
IRFP460
40HFL40S02
40HFL40S02
DO-203AB
IRFP460
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ln2054
Abstract: 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20
Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 5 10 15 20 25 30 KG01420SX KG01421SX lN2789 KG01422SX OS35•08A OS35·02A OS35·04A 55HQ020 lN2128 lN2128A 50 50 50 50 51 52 52 60 60 60 ~~~~~~OSX ~g
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KG01420SX
KG01421SX
lN2789
KG01422SX
55HQ020
lN2128
lN2128A
lN2129
lN2129A
20MA10
ln2054
70H40
70H20A
70H30A
70H80
70H40A
5MO 165
lN3261
20M20
70Ma20
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SSIE1420
Abstract: SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J
Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM •FSM Max A 00 (A) 00 VF IF @ IR Test (A) IR VR 25 °C @ (A) Test (V) (A) @ T2 Test CO 'Opar Max (°C) Package Style General-Purpose, lo >= 25 A (Cont'd) . . . .5 . . . .10
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As-13
Press-13
Disc-10
203AB
DO-21
SSIE1420
SSiE1210
SSIE1120
aeg diode
SSiE1410
ssie1220
ssie1110
TRA1110
SSIE1205
D6050J
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DS35-02A
Abstract: R4140260 EU555B SG63S SG63R SR60L2S SR60L ASEA Brown SR6004 sg-63s
Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM IFSM Max A 00 (A) 00 IR IF VF @ Test (A) IR VR 25 °C @ Test (A) (V) T2 @ Test (A) (°C) T Oper Package Style Max (°C) General-Purpose, lo >= 50 A (Cont'd) 5 10 DS35-02A DS35-04A
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DS35-02A
DS35-04A
D34/800C
1SM55
2SM55
EU555AP
EU555AT
EU555AW
4SM55
EU555BP
R4140260
EU555B
SG63S
SG63R
SR60L2S
SR60L
ASEA Brown
SR6004
sg-63s
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VSK51
Abstract: No abstract text available
Text: MICROSEMI CORP/ SbE D MICRO / • bllS'iO? 000142S 3^1 MICRO QUALITY / 60 Amp Schottky VSK51 i h úl T=02>-Z1 SEMICONDUCTOR. INC 150X Max Tj 45 Volts VRRM .60 Volts VF @ lF = 60 Amps @ 125°C. Very Fast Switching Speed Standard DO-5 Stud Mount Case JEDEC Package 203AB formerly DO-5
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000142S
VSK51
203AB
VSK51
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Untitled
Abstract: No abstract text available
Text: MICRO QUALITY / SE M ICO ND UC TO R , INC. 50 Amp Epitaxial High Efficiency Rectifiers Low Thermal Resistance Extremely Low Leakage at High Temperature High Surge Capability Very Fast Switching Speeds Glass Passivated Standard D05 Case JEDEC Package 203AB fo rm e rly DO-5
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203AB
VHE805
VHE806
VHE807
VHE808
VHE805
VHE806
VHE808
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diode A28
Abstract: ma 7050 G952
Text: MICRO QUALITY / SEMICONDUCTOR. INC 70 Amp HV Schottky Rectifier 50, 60, 80, & 100 Volt VRRM 0.86 Volts at lF = 70 Amps Low Leakage at High Temperature High Surge Capability D 0 5 Package DIM. A 6 C D E F G JEDEC Package 203AB formerly DO-5 MILLIMETERS INCHES
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203AB
150-C
ESST1VE10AS
diode A28
ma 7050
G952
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Untitled
Abstract: No abstract text available
Text: M IC R O Q U A L IT Y / SEM IC O N D U C TO R . INC. 70 Am p HV S chottky Rectifier 50, 60, 80, & 100 Volt VRRM 0.86 Volts at lF = 70 Amps Low Leakage at High Temperature High Surge Capability D05 Package JEOEC Package 203AB fo rm e rly DO-5 DIM. A B C D
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203AB
Vi-28
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VSK71
Abstract: No abstract text available
Text: MICRO QUALITY / 75 Amp Schottky v s k 71, v s k 72 SE M ICO ND UC TO R , INC. 175 c m ax Ta 50 Volts and 60 Volts VRRM 175°C Junction Operating Temperature Lowest lR in the Industry Exceptional dv/dt: 2000 V /^s D05 Package JEDEC Package 203AB fo rm e rly DO-5 _
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203AB
Vi-28
VSK71
VSK72
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J1587
Abstract: 20331 2N150
Text: International Schottky Diodes lö R Rectifier VFM @ lFM Part Number VRRM V 1FAV @ TC (A) (C) 25°C (mA) Um @ eAS Ur H ) (A) Fax on Demand Number vrwm 2S°C (mA) Max Tj (°C) Notes Case Outline Key Through-Hole Packages 30 25 105 0.8ft 40 6 250 125 -> 7 14
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D0-203AA
1N6095
1N6096
20FQ035
30FQ035
21FQ035
30FQ040
20FQ040
21FQ040
20FQ045
J1587
20331
2N150
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MHT10P10
Abstract: SM 8002 C NS 8002 1151
Text: MOTOROLA SC XSTRS/R F 4bE D fe.3t.7254 00*12474 b • MOTb MOTOROLA SEM IC O N D U C TO R i TECHNICAL DATA M H T10P10 Discrete Military Products Suffixes: HX, HXV P o w e r Field-Effect T ra n sisto r Processed per MIL-S-19500/547 P-Channel Enhancement-Mode
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T10P10
MIL-S-19500/547
O-116)
MHT10P10
SM 8002 C
NS 8002 1151
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