DN3145
Abstract: DN3145N8 DATE CODE FOR SUPERTEX
Text: DN3145 Initial Release N-Channel Depletion-Mode Vertical DMOS FETs Features Advanced DMOS Technology ❏ High input impedance These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces
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DN3145
100mA,
100mA
DN3145
DN3145N8
DATE CODE FOR SUPERTEX
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FAST DMOS FET Switches n-CHANNEL
Abstract: fet free mos 926 FAST DMOS FET Switches p-CHANNEL VC0106 FAST DMOS FET Switches FET P-Channel Switch P-Channel Enhancement FET P-Channel Enhancement Mode Vertical DMOS FET VC0106N6
Text: VC0106 Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) Q1 + Q2 or Q3 + Q4 60V 11Ω Order Number / Package 14-Pin P-Dip VC0106N6 Features Advanced DMOS Technology • 4 independent channels These enhancement-mode (normally-off) DMOS FET arrays
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VC0106
14-Pin
VC0106N6
FAST DMOS FET Switches n-CHANNEL
fet free
mos 926
FAST DMOS FET Switches p-CHANNEL
VC0106
FAST DMOS FET Switches
FET P-Channel Switch
P-Channel Enhancement FET
P-Channel Enhancement Mode Vertical DMOS FET
VC0106N6
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diode characteristics
Abstract: n-channel fet n-channel mosfet transistor VN03 cgs diode
Text: DMOS Applications DMOS Application Note AN–D1 3 DMOS FET Electrical Performance The electrical behavior of MOSFETs has been explained by numerous authors. A different, and nontraditional way of viewing their behavior arises when the device structure is closely examined. The source and body regions comprise one side of a diode,
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DN2640
Abstract: DN2640N3 DN2640ND
Text: DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven
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DN2640
300mA
DN2640N3
DN2640ND
200mA,
200mA
DN2640
DN2640N3
DN2640ND
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TN0702N3
Abstract: TN0702
Text: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 7 Features Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven
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TN0702
TN0702N3
500mA
200pF
TN0702N3
TN0702
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Untitled
Abstract: No abstract text available
Text: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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TP2502
125pF
DSFP-TP2502
A022309
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DN2640
Abstract: DN2640N3 DN2640ND
Text: – E T E L O S B O – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven
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DN2640
300mA
DN2640N3
DN2640ND
200mA,
200mA
DN2640
DN2640N3
DN2640ND
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Untitled
Abstract: No abstract text available
Text: Product Summary Sheet TN2640 N-Channel Enhancement-Mode DMOS FET Low Threshold DMOS Technology Applications ! DC-DC converters ! Solid state relays ! Ultrasound pulsers ! Telecom switches ! Photo voltaic drivers ! Analog switches Switching Waveforms and Test Circuit
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TN2640
TN2640K4
thes2640
TN2640
TN2640N3
TN2640LG
TN2640,
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Untitled
Abstract: No abstract text available
Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing
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TP5322
110pFmax.
-100mA
-200mA
DSFP-TP5322
NR041105
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Untitled
Abstract: No abstract text available
Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET General Description Features These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing
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TP5322
110pFmax.
-100mA
-200mA
DSFP-TP5322
NR011905
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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VP2450
DSFP-VP2450
B082613
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2N6661
Abstract: No abstract text available
Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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2N6661
2N6661
DSFP-2N6661
C042711
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TN2640
DSFP-TN2640
C071913
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a
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VN10K
DSFP-VN10K
B031411
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fet to92
Abstract: D-PAK package FAST DMOS FET Switches n-CHANNEL FAST DMOS FET Switches improves TN2640 TN2640K4 TN2640LG TN2640N3 DMOS small signal
Text: Product Summary Sheet TN2640 N-Channel Enhancement-Mode DMOS FET Low Threshold DMOS Technology Applications ! DC-DC converters ! Solid state relays ! Ultrasound pulsers ! Telecom switches ! Photo voltaic drivers ! Analog switches Switching Waveforms and Test Circuit
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TN2640
TN2640K4
225pF)
TN2640
TN2640N3
TN2640LG
TN2640K4
fet to92
D-PAK package
FAST DMOS FET Switches n-CHANNEL
FAST DMOS FET Switches
improves
TN2640LG
TN2640N3
DMOS small signal
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Untitled
Abstract: No abstract text available
Text: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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DN2530
DN2530
DSFP-DN2530
A103108
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voltage drop circuit from 220V to 10V
Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This
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TP5322
110pFmax.
-100mA
-200mA
DSFP-TP5322
A042005
voltage drop circuit from 220V to 10V
SOT89 FET marking
diode p3c
TP5322
TP5322K1
TP5322K1-G
TP5322N8
FAST DMOS FET Switches
MOS P-Channel SOT23
fet sot-89 marking code
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Untitled
Abstract: No abstract text available
Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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2N6660
2N6660
DSFP-2N6660
C031411
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e041
Abstract: No abstract text available
Text: Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2540
DN2540
DSFP-DN2540
B041310
e041
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces
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TN0106
DSFP-TN0106
B080811
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sot 23 x 316
Abstract: fet sot-89 marking code sot-89 MARKING CODE ab TN5325 TN5325K1-G TN5325N3-G TN5325N8-G jedec sot-23
Text: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN5325
DSFP-TN5325
A052009
sot 23 x 316
fet sot-89 marking code
sot-89 MARKING CODE ab
TN5325
TN5325K1-G
TN5325N3-G
TN5325N8-G
jedec sot-23
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Untitled
Abstract: No abstract text available
Text: ir e s ft DMCD1 DIE N-Channel Depletion-Mode Lateral DMOS FETs The DMCD is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the operating
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OCR Scan
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SD2100
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SD2100
Abstract: No abstract text available
Text: SD2100 N-Channel Depletion-Mode Lateral DMOS FET in c o r p o ra t e d The SD2100 is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the
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SD2100
O-206AF)
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ultra FAST DMOS FET Switches
Abstract: SD2100 depletion fet depletion mode fet SST2100 XSD2100 FAST DMOS FET Switches
Text: N-Channel Depletion Mode Lateral DMOS FET CCIIOQIC CORPORATION \J SD2100/SST2100 FEATURES DESCRIPTION • Fast S w itching. toN 1.0ns ! . crss2 p f The SD2100/SST2100 is a depletion mode DMOS lateral FET
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SD2100/SST2100
SD2100/SST2100
OT-143.
SD2100
SST2100
OT-143
XSD2100
10OfiA
1A44322
000102b
ultra FAST DMOS FET Switches
depletion fet
depletion mode fet
FAST DMOS FET Switches
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