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    DMB SPC Search Results

    DMB SPC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    71502L35J Renesas Electronics Corporation REGISTER RAM WITH SPC Visit Renesas Electronics Corporation
    71502L25J8 Renesas Electronics Corporation REGISTER RAM WITH SPC Visit Renesas Electronics Corporation
    71502S25J8 Renesas Electronics Corporation REGISTER RAM WITH SPC Visit Renesas Electronics Corporation
    71502L25J8/2523 Renesas Electronics Corporation REGISTER RAM WITH SPC Visit Renesas Electronics Corporation
    71502S35J Renesas Electronics Corporation REGISTER RAM WITH SPC Visit Renesas Electronics Corporation

    DMB SPC Datasheets Context Search

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    jdsu photodetector

    Abstract: EPM 705 series JDSU EPM 705 DMB SPC pin photodetector 2011 EPM705 JDSU EPM
    Text: optical Communications Return Path Analog CATV Detector Modules EPM 705 Series Key Features • Electro-optical - Low intermodulation distortion - High responsivity - Low back reflection • Packaging - Single mode 900 µm fiber with or without a connector


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    PDF 498-JDSU 5378-JDSU EPM705 jdsu photodetector EPM 705 series JDSU EPM 705 DMB SPC pin photodetector 2011 JDSU EPM

    JDSU EPM 705

    Abstract: PIN Photodiode Module For CATV Receiver PIN Photodiode For CATV Receiver dual photodiode EPM 705 series JDS Uniphase photodiode epm 745 diode JDSU EPM
    Text: COMMUNICATIONS COMPONENTS Forward and Return Path Analog CATV Detector Modules EPM 7xx Series Key Features • Electro-optical - Low intermodulation distortion - High responsivity - Low back reflection • Packaging - Single mode 900 µm fiber with or without a connector


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    PDF 498-JDSU 5378-JDSU JDSU EPM 705 PIN Photodiode Module For CATV Receiver PIN Photodiode For CATV Receiver dual photodiode EPM 705 series JDS Uniphase photodiode epm 745 diode JDSU EPM

    Untitled

    Abstract: No abstract text available
    Text: Product Bulletin EPM 7xx Series Forward and Return Path Analog CATV Detector Modules EPM 705 Specifications Conditions (unless noted): Temperature = 25°C, VR = 5V All specifications without connector. Parameter Measurement Conditions Min Typ Responsivity


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    InGaas PIN photodiode, 1550 ,sensitivity

    Abstract: JDS Uniphase photodiode epm 605 InGaAs photodiodes 1310 1550 PIN Photodiode 4 Ghz 1550 nm JDS Uniphase photodiode epm pin photodiode 1550 sensitivity JDSU EPM
    Text: Product Bulletin C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes EPM 6xx Series The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in


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    JDS Uniphase photodiode epm 605

    Abstract: JDS Uniphase photodiode epm 606LL InGaas PIN photodiode, 1550 sensitivity pin photodiode 1550 sensitivity epm 6xx series pin photodiode 1550 InGaas PIN photodiode, 1550 sensitivity application photodiode 1550 nm EPM605LL
    Text: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in


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    InGaAs Epitaxx EPM

    Abstract: epitaxx EPITAXX EPM InGaAs photodiode 1310 1550 PIN photodiode 510 nm dual ingaas photodiode
    Text: EPM 606 L-Band InGaAs PIN Photodiode Preliminary Specifications Features • • • • • Low back reflection High responsivity in L-Band at 1625 nm High responsivity at 1310 and 1550 nm Single Mode 900 µm fiber with or without a connector Single Mode 250 µm fiber without a connector


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    PDF bus00 1E-07 1E-08 1E-09 1E-10 1E-11 InGaAs Epitaxx EPM epitaxx EPITAXX EPM InGaAs photodiode 1310 1550 PIN photodiode 510 nm dual ingaas photodiode

    DMF2190

    Abstract: DMJ2312-255 DMF2821-250 ka-band mixer DME2459 DMF2454 mixer diodes DME2127-250 DMF2835-000 DMF2820
    Text: Silicon Beam–Lead Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages SPC Controlled Wafer Fabrication Description Alpha beam–lead and chip Schottky barrier mixer


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    PDF 015mm) 005mm) DMF2190 DMJ2312-255 DMF2821-250 ka-band mixer DME2459 DMF2454 mixer diodes DME2127-250 DMF2835-000 DMF2820

    EPITAXX

    Abstract: InGaAs Epitaxx EPM 705 w dual ingaas photodiode
    Text: Return Path CATV EPM 705 Low Distortion, Low Capacitance InGaAs PIN Photodiode for Return Path and 550 MHz AM CATV Features • Low intermodulation distortion • High responsivity • Low back reflection Applications • AM fiber optic CATV receivers to 550 MHz


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    EPITAXX

    Abstract: 745 diode dual ingaas photodiode InGaAs Epitaxx EPM schema EPM-745
    Text: Forward Path CATV EPM 745 Low Distortion, Low Capacitance InGaAs PIN Photodiode for 860 MHz AM CATV Features • • • • • Low Intermodulation distortion High responsivity Low capacitance Low back reflection Linear with high input optical power to +5 dBm


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    schematic diagram TCON lcd samsung

    Abstract: T-CON BOARD samsung schematic diagram tcon samsung T-CON Schematic samsung SC451ITS T-CON BOARD samsung pin samsung T-CON Schematic LRX4311 HU-1M2012-121JT AH44 hall
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents MACAO Cover Operation Block diagram


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    PDF 945GU BA41-00743A 47-C1 47-C1 220nF MX25L8005M2C-15G 47-C2 47-C2 schematic diagram TCON lcd samsung T-CON BOARD samsung schematic diagram tcon samsung T-CON Schematic samsung SC451ITS T-CON BOARD samsung pin samsung T-CON Schematic LRX4311 HU-1M2012-121JT AH44 hall

    Q514

    Abstract: du508 Samsung ddr2 MIC500 EMI502 BA59-01869A BA09-00009A samsung hd50 d4.0 34C1 mx25l8005m2c-15g
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV


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    PDF 945GMS BA41-00680A BA41-00683A TP18615 TP18616 TP18617 TP18618 TP18619 TP18620 TP18621 Q514 du508 Samsung ddr2 MIC500 EMI502 BA59-01869A BA09-00009A samsung hd50 d4.0 34C1 mx25l8005m2c-15g

    MMZ1608S121AT

    Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV


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    PDF 945GMS BA41-00680A BA41-00683A Pag614 TP18615 TP18616 TP18617 TP18618 TP18619 TP18620 MMZ1608S121AT nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2

    B30C300

    Abstract: 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


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    PDF BA41-00574A YONAH667 Sheet18. Sheet19. 047nF RHU002N06 12-C4 B30C300 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD

    ATSAM3N00A

    Abstract: AX 2008 lqfp48 ATSAM3N SAM3N 3086 p atsam3n00aa LQFP48 LAND PATTERN LT 5208 SVC 201 ceramic capacitor 4 terminal 12 MHzcrystal clock oscillator
    Text: Features • Core • • • • • • • – ARM Cortex®-M3 revision 2.0 running at up to 48 MHz – Thumb®-2 instruction – 24-bit SysTick Counter – Nested Vector Interrupt Controller Pin-to-pin compatible with SAM7S legacy products 48- and 64-pin versions and


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    PDF 24-bit 64-pin 100-pin 128-bit 11011B 21-Feb-12 ATSAM3N00A AX 2008 lqfp48 ATSAM3N SAM3N 3086 p atsam3n00aa LQFP48 LAND PATTERN LT 5208 SVC 201 ceramic capacitor 4 terminal 12 MHzcrystal clock oscillator

    Untitled

    Abstract: No abstract text available
    Text: Features • Core • • • • • • • – ARM Cortex®-M3 revision 2.0 running at up to 48 MHz – Thumb®-2 instruction – 24-bit SysTick Counter – Nested Vector Interrupt Controller Pin-to-pin compatible with SAM7S legacy products 48- and 64-pin versions and


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    PDF 24-bit 64-pin 100-pin 128-bit 11011Bâ 21-Feb-12

    sam3n1b

    Abstract: AT91SAM ISO7816 LQFP100 LQFP48 LQFP64 QFN48 QFN64 AG qd SMD atsam3n4aa
    Text: Features • Core • • • • • • • – ARM Cortex®-M3 revision 2.0 running at up to 48 MHz – Thumb®-2 instruction – 24-bit SysTick Counter – Nested Vector Interrupt Controller Pin-to-pin compatible with SAM7S legacy products 48- and 64-pin versions and


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    PDF 24-bit 64-pin 100-pin 128-bit 1011A 04-Oct-10 sam3n1b AT91SAM ISO7816 LQFP100 LQFP48 LQFP64 QFN48 QFN64 AG qd SMD atsam3n4aa

    at91sam3s

    Abstract: STRD 1806 1280 unipolar stepper motor AT91SAM3S hsmci atmel h 952 atmel SAM3S LT 7237 ATSAM3S2B SAM3S SAM3S1B
    Text: Features • Core • • • • • • • – ARM Cortex®-M3 revision 2.0 running at up to 64 MHz – Memory Protection Unit MPU – Thumb®-2 instruction set Pin-to-pin compatible with AT91SAM7S legacy products (48- and 64-pin versions) Memories


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    PDF AT91SAM7S 64-pin 128-bit 14-Dec-09 at91sam3s STRD 1806 1280 unipolar stepper motor AT91SAM3S hsmci atmel h 952 atmel SAM3S LT 7237 ATSAM3S2B SAM3S SAM3S1B

    DMJ4317

    Abstract: DMJ4708 DMF5847 DME3256 DMF3383 DMJ6575 ka-band mixer DME3040 DMF5848 diode ring mixer
    Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ËMlph DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


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    PDF l2-34 AS006R2-10 AK002M4-31 AS004L1-08 AS406M2-01 AK004L1â AS004L1â AS406R2-01 AK004M1-11 AS004L2-11 DMJ4317 DMJ4708 DMF5847 DME3256 DMF3383 DMJ6575 ka-band mixer DME3040 DMF5848 diode ring mixer

    e3055

    Abstract: j4313 F2822 j2833 F3373 J2303 E3009 F2189 F4734 me2206
    Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication Description


    OCR Scan
    PDF F3179 DMJ3961 F3242 E4399 J4708 E3346 J4394 F3972 E3974 DMJ3112 e3055 j4313 F2822 j2833 F3373 J2303 E3009 F2189 F4734 me2206

    dmj4317

    Abstract: DMF5848 DME3256 DME3040 ka-band mixer DM228 DME3006 DME3124 dmf5848 diode DMF2820
    Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes EHAIph DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


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    PDF AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AK006L1-00 AS004M2-08 dmj4317 DMF5848 DME3256 DME3040 ka-band mixer DM228 DME3006 DME3124 dmf5848 diode DMF2820

    dmj4317

    Abstract: No abstract text available
    Text: Silicon Beam-Lead and Chip EDAIphi Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


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    PDF DMF3242 DME4399 DME3346 DME3974 DMJ4708 DMJ4394 DMJ3112 DMF3975 DME3978 DMF3179 dmj4317

    DMF5848

    Abstract: kaba ka-band mixer
    Text: Silicon Beam-Lead and Chip 0 3 Alpha Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication


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    PDF DMF3242 DME4399 DMJ4708 DMJ3091 DMJ3961 DMF3179 DME3346 DMJ4394 DMF3972 DME3974 DMF5848 kaba ka-band mixer

    404-011

    Abstract: dmb2856 404002
    Text: Silicon Beam-Lead and Chip EHAlpha Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fab Description


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    PDF DMB2853 DMB2854 DMB2855 DMB2856 404-011 404002

    75re

    Abstract: No abstract text available
    Text: 2 TH I S ß l D R A W I NG C OPYRIGHT I S UNPUBLI SHED. 19 R EL EA S ED BY AMP I NCORPORATE D . ALL FOR P U B LIC A T IO N R IG H TS . I 9 LOC R E V ISIONS Dl S T AG R ES ER V ED . 53 LTR DE SC R I P T I O N APVD 05JUN98 AH 1 9FE099 AH KK KK R E V I S E D P E R 0G 5 0 - 0 0 6 I - 9 9


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    PDF 05JUN98 9FE099 3APR99 UL94V-0, 0077Q 27JUN 75re