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DM4435 Abstract: SDM4435 Text: S DM4435 S amHop Microelectronics C orp. J ul.27 2004 ver1.1 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( m W ) Max R ugged and reliable. 20 @ V G S = -10V -30V 5 S uper high dense cell design for low R DS (ON ).	Original	PDF	DM4435 DM4435 SDM4435

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DM4435

Abstract: SDM4435
Text: S DM4435 S amHop Microelectronics C orp. J ul.27 2004 ver1.1 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( m W ) Max R ugged and reliable. 20 @ V G S = -10V -30V 5 S uper high dense cell design for low R DS (ON ).

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