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TURCK Inc GSDM 44-10M Cdp \|Turck GSDM 44-10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	GSDM 44-10M	Bulk			1	1 $174.6 10 $174.6 100 $174.6 1000 $174.6 10000 $174.6	Buy Now
TURCK Inc GKDM 44-10M Cdp \|Turck GKDM 44-10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	GKDM 44-10M	Bulk			1	1 $174.6 10 $174.6 100 $174.6 1000 $174.6 10000 $174.6	Buy Now
TURCK Inc GSDM GKDM 44-10M Cdp \|Turck GSDM GKDM 44-10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	GSDM GKDM 44-10M	Bulk			1	1 $222.2 10 $222.2 100 $222.2 1000 $222.2 10000 $222.2	Buy Now
TURCK Inc GSDM 44-10M/S4000 \|Turck GSDM 44-10M/S4000
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	GSDM 44-10M/S4000	Bulk			1	1 $131.6 10 $131.6 100 $131.6 1000 $131.6 10000 $131.6	Buy Now
TURCK Inc GSDM 44-10M (ALTERNATE: U-28887) Cordset, 1 3/8-16UN Male Straight, 4 Wire, 10 Meter, TPE, Black, U-28887 \| Turck GSDM 44-10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	GSDM 44-10M (ALTERNATE: U-28887)	Bulk		14 Weeks	1	1 $174.6 10 $174.6 100 $174.6 1000 $174.6 10000 $174.6	Get Quote

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: S DM4410 S amHop Microelectronics C orp. Mar.01,2006 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 13.5 @ V G S = 10V	Original	PDF	DM4410 25LLIME
DM4410 Abstract: SDM4410 Text: Green Product S DM4410 S amHop Microelectronics C orp. Mar.01,2006 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.	Original	PDF	DM4410 DM4410 SDM4410
DM4410 Abstract: No abstract text available Text: S DM4410 S amHop Microelectronics C orp. J ul.22,2004 ver 1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 13.5 @ V G S = 10V	Original	PDF	DM4410 300ms DM4410
DM4410 Abstract: No abstract text available Text: S DM4410 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) TYP R ugged and reliable. 11 @ V G S = 10V	Original	PDF	DM4410 300ms DM4410