zener diode
Abstract: WT-Z108N
Text: WT-Z108N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108N
137um)
zener diode
WT-Z108N
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Untitled
Abstract: No abstract text available
Text: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108P
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ZENER Vr 3V
Abstract: Zener Diode 3v zener- diode WT-Z111N
Text: WT-Z111N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z111N 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z111N
160um)
ZENER Vr 3V
Zener Diode 3v
zener- diode
WT-Z111N
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Untitled
Abstract: No abstract text available
Text: WT-Z108N-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-4 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108N-4
137um)
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3.2 v zener diode
Abstract: No abstract text available
Text: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108P-AU
3.2 v zener diode
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um 54 diode
Abstract: zener diode chip 3.2 v zener diode
Text: WT-Z108N-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-AU 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108N-AU
137um)
um 54 diode
zener diode chip
3.2 v zener diode
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WT-Z108P
Abstract: No abstract text available
Text: WT-Z108P-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-4 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108P-4
WT-Z108P
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zener diode chip
Abstract: WT-Z108P-AU4
Text: WT-Z108P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU4 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108P-AU4
zener diode chip
WT-Z108P-AU4
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z106
Abstract: DIODE ZENER X
Text: WT-Z106P-4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-14 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z106P-4-14
150mm)
25-Jan-07
z106
DIODE ZENER X
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3.2 v zener diode
Abstract: 105um DIODE ZENER X
Text: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z106P-4-12
150mm)
05-Dec-06
3.2 v zener diode
105um
DIODE ZENER X
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std883
Abstract: Zener diode DIODE ZENER X
Text: WT-Z106N-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4 2. Structure: 2-1 Planar type: N/P Diode
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WT-Z106N-AU4
MIL-STD883
24-Nov-05
std883
Zener diode
DIODE ZENER X
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3.2 v zener diode
Abstract: diode zener protection ZENER 5V diode Zener LED zener diode WT-Z105P-AU4 DIODE ZENER X
Text: WT-Z105P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4 2. Structure: 2-1 Planar type: P/N Diode
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WT-Z105P-AU4
MIL-STD883
3.2 v zener diode
diode zener protection
ZENER 5V diode
Zener LED
zener diode
WT-Z105P-AU4
DIODE ZENER X
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3.2 v zener diode
Abstract: 10v ZENER DIODE 20 kV ZENER DIODE DIODE ZENER X
Text: WT-Z106P-AU4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-AU4-14 2. Structure:
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WT-Z106P-AU4-14
150mm)
20-Jul-07
3.2 v zener diode
10v ZENER DIODE
20 kV ZENER DIODE
DIODE ZENER X
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R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS60-3
R22A
transistor MTBF
OPTOCUPLER HAND BOOK
TRANSISTOR mosfet
transistor R1d
R24 transistor
optocupler
transformer mtbf
R18A
R22E
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zd1 1014
Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky
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110VAC
ZPD40-512
zd1 1014
217F
C10A
C12A
capacitor ceramic
optocupler
transistor MTBF
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ltc4352iddpbf
Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss
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LTC4352
12-Pin
1TC4412HV
8V/36V,
TSOT-23
LTC4413/LTC4413-1
DFN-10
LTC4414
LTC4416/LTC4416-1
ltc4352iddpbf
TRANSISTOR mosfet 9V
LTC4352I
LTC4352
LTC4352IMS
Schottky Diode 80V 6A
LTC4352C
LTC4352CDD
LTC4352IDD
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217F
Abstract: resistor film transistor MTBF L2 diode 725
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA40-5
217F
resistor film
transistor MTBF
L2 diode 725
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ZPSA60-15
Abstract: FR 306 Diode 217F
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA60-15
ZPSA60-15
FR 306 Diode
217F
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DIODE 4008
Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA40-12
DIODE 4008
"DIODE" 4008
217F
capacitor Electrolytic
zener3
optocupler
105 capacitor
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217F
Abstract: ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-12 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA60-12
217F
ZPSA60-12
capacitor variable ceramic
zd1 1014
105 capacitor
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lg diode
Abstract: Z188 LR Z185-CO diode 006 LG
Text: SIEMENS LG/LR/LY Z181 2 toS DIODE ARRAYS LG ZI 82-186 8,10 DIODE ARRAYS LG Z188, 180 2 to 10 DIODE ARRAYS LR Z182“ 189/180 SINGLE 2 mm LED Lamp Dimensions in inches mm •094 ( 2 .4 ) , .063(2.1) .112(2.84) .068(2.24) .378 (9.6) 330(04) r\ o m .J.100 xa.S4)
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Z181-CO
Z182-CO
LG/LRZ183-CO
Z184-CO
Z185-CO
Z186-CO
Z187-CO
Z188-CO
Z189-CO
Z180-CO
lg diode
Z188
LR Z185-CO
diode 006 LG
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l30 diode smd
Abstract: No abstract text available
Text: SI EM ENS LG/LR/LY Z181 2 to 6 DIODE ARRAYS LG Z182-186 8,10 DIODE ARRAYS LG Z188,180 2 to 10 DIODE ARRAYS LR Z182— 189/180 s in g l e 2 mm LED Lamp Dimensions in inches mm .0 94 ( 2 .4 ) FEATURES • Emission color - LR : Red - LG : Green -L Y : Yellow
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Z182-186
18-pln
fl535t
l30 diode smd
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diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
diode G21
marking G21 Z5
LD4RA
BZX84-C27
BZX84C18
g21 Transistor
BZX84C3V0
BZX84
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diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
diode Lz 66
diode LZ. 58
BZX84C20
BZX84-C27
diode marking w8
BZX84-C5V1
BZX84C18
diode marking x6
BZX84-C15
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