LTC4358
Abstract: LTC4252-2A LTC4358CFE MARKING TRANSISTOR BD RC marking g02 tssop FE16 n channel mosfet marking Bc B530C LTC4358C LTC4358CDE
Text: LTC4358 5A Ideal Diode FEATURES DESCRIPTION n The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat
|
Original
|
PDF
|
LTC4358
LTC4358
14-Pin
16-Lead
LTC4355
LTC4357
LTC4223-1/LTC4223-2
4358fa
LTC4252-2A
LTC4358CFE
MARKING TRANSISTOR BD RC
marking g02 tssop
FE16
n channel mosfet marking Bc
B530C
LTC4358C
LTC4358CDE
|
Untitled
Abstract: No abstract text available
Text: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat
|
Original
|
PDF
|
LTC4358
LTC4358
14-Pin
16-Lead
LTC4355
LTC4357
LTC4223-1/LTC4223-2
4358fa
|
MOZ 23
Abstract: DD1000S33HE3 48 H diode
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
|
Original
|
PDF
|
DD1000S33HE3
MOZ 23
DD1000S33HE3
48 H diode
|
DD1000S33
Abstract: FZ1000R33HE3
Text: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
|
Original
|
PDF
|
DD1000S33HE3
DD1000S33
FZ1000R33HE3
|
LTC4416
Abstract: No abstract text available
Text: LTC4353 Dual Low Voltage Ideal Diode Controller FEATURES n n n n n n n DESCRIPTION The LTC 4353 controls external N-channel MOSFETs to implement an ideal diode function. It replaces two high power Schottky diodes and their associated heat sinks, saving power and board area. The ideal diode function
|
Original
|
PDF
|
LTC4353
16-Lead
LTC4353
DFN-10
DFN-10
LTC4414
LTC4415
MSOP-16
DFN-16
LTC4416/LTC4416-1
LTC4416
|
transistor lt 2815
Abstract: No abstract text available
Text: LTC4085 USB Power Manager with Ideal Diode Controller and Li-Ion Charger DESCRIPTION FEATURES n n n n n n n n n n Seamless Transition Between Input Power Sources: Li-Ion Battery, USB and 5V Wall Adapter 215mΩ Internal Ideal Diode Plus Optional External Ideal Diode Controller Provide Low Loss PowerPath
|
Original
|
PDF
|
LTC4085
500mA/100mA)
LTC4055
QFN16
LTC4066
QFN24
4085fd
transistor lt 2815
|
5B12
Abstract: FP50R06W2E3 WG01 KT4I
Text: Technische Information / technical information FP50R06W2E3_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
|
Original
|
PDF
|
FP50R06W2E3
5B12
WG01
KT4I
|
C532 diode
Abstract: b16/41289
Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
|
Original
|
PDF
|
FP50R06W2E3
14BBFB'
A4F32
F223B
1231423567896A4BC3D6E23F
61F7DC
C532 diode
b16/41289
|
IHW20N120R3
Abstract: J127 9127 diode
Text: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
|
Original
|
PDF
|
IHW20N120R3
J-STD-020
JESD-022
IHW20N120R3
J127
9127 diode
|
DIODE WJ SOD323
Abstract: BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S
Text: BL Galaxy Electrical Production specification Surface mount zener diode FEATURES BZT52C2V0S-BZT52C39S Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode.
|
Original
|
PDF
|
BZT52C2V0S-BZT52C39S
OD-323
BZT52C2V4S-BZT52C51S
BL/SSZDB019
DIODE WJ SOD323
BZT52C2V0S
BZT52C2V0S-BZT52C39S
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
|
IHW20N120R3
Abstract: j127 H63-1 9P127 E393 h631 wg 2 fk
Text: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
|
Original
|
PDF
|
IHW20N120R3
J-STD-020
JESD-022
IHW20N120R3
j127
H63-1
9P127
E393
h631
wg 2 fk
|
DDB6U25N16VR
Abstract: 76w9
Text: Technische Information / technical information DDB6U25N16VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# $ " 1 &' *+, 23 % " # 4$ 2 5 2 2 # 3 2 52 2
|
Original
|
PDF
|
DDB6U25N16VR
DDB6U25N16VR
76w9
|
FF200R12MT4
Abstract: No abstract text available
Text: Technische Information / technical information FF200R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode IGBT-Wechselrichter / IGBT-inverter
|
Original
|
PDF
|
FF200R12MT4
FF200R12MT4
|
BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
|
Original
|
PDF
|
FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
|
|
|
Untitled
Abstract: No abstract text available
Text: LM185-2.5QML LM185-2.5QML Micropower Voltage Reference Diode Literature Number: SNVS385 LM185-2.5QML Micropower Voltage Reference Diode General Description The LM185-2.5 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 20 µA to 20 mA current
|
Original
|
PDF
|
LM185-2
SNVS385
|
Untitled
Abstract: No abstract text available
Text: LM185-1.2QML LM185-1.2QML Micropower Voltage Reference Diode Literature Number: SNVS384 LM185-1.2QML Micropower Voltage Reference Diode General Description The LM185-1.2 is a micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10µA to 20mA current
|
Original
|
PDF
|
LM185-1
SNVS384
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"# 6$1B%3DE1322E14DDD &' 6 6*+,
|
Original
|
PDF
|
DDB6U25N16VR
3DE1322E14DD
2313B
32E36
26323D
32B612
4256F
223DB6
6323D
223DB64B6
|
LTC4088
Abstract: NTHS0603N01N1003 usb softconnect
Text: LTC4088 High Efficiency Battery Charger/USB Power Manager Description Features Switching Regulator Makes Optimal Use of Limited Power Available from USB Port to Charge Battery and Power Application n 180mΩ Internal Ideal Diode Plus Optional External Ideal Diode Controller Seamlessly Provides Low
|
Original
|
PDF
|
LTC4088
100mA,
500mA
800mA
LTC4088-1
LTC4089/LTC4089-5
4088fb
NTHS0603N01N1003
usb softconnect
|
Untitled
Abstract: No abstract text available
Text: wgm j SRDA3.3-4 • ,■.» -." Preliminary - April 1, 1998 RailClamp Low Capacitance TVS Diode Array THRU SRDA12-4 TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to
|
OCR Scan
|
PDF
|
SRDA12-4
12x16
|
UAF41
Abstract: CDA 5,5 Mc CDA 5.5 MC alim H242 551-va
Text: UAF41 DIODE-PENTODE with variable mutual conductance for use as H.F., I.F. and L.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Ver wendung als H.F.-, Z.F.- und H.F. Verstärker
|
OCR Scan
|
PDF
|
UAF41
UAF41
CDA 5,5 Mc
CDA 5.5 MC
alim
H242
551-va
|
DAF401
Abstract: No abstract text available
Text: PHILIPS IDÄF4Ö DIODE-PENTODE for use as R.F. or I.F. amplifier in battery receivers DIODE-PENTHODE pour l'utilisation comme amplifica trice H.F. ou M.F. dans des apareils-batterie DIODE-PENTODE zur Verwendung als HF- oder ZF- Ver stärker in Batteriegeräten
|
OCR Scan
|
PDF
|
DAF40
7RQ3013
DAF401
|
EBL21
Abstract: UBL21 AC/DC tig UBL Series
Text: U B L 21 UBL 21 D o u b le diode o u tp u t p e n to d e The UBL 21, designed for use in AC/DC receivers and taking a max29 heater current of 100 mA, comprises a double diode and a verysensitive 11 W att output pentode. The diode and pentode sections employ a common cathode and the two diode anodes are both situated
|
OCR Scan
|
PDF
|
max29
EBL21
UBL21
AC/DC tig
UBL Series
|
EAF42
Abstract: ech41 philips EAF 42 ECH 42 philips diagram fr 310 Philips schema philips fr 310 RG211 ECH42 390SV
Text: IËÂF42 PHILIPS DIODE-PENTODE with variable mutual conductance for use as R.F., I.F. or A.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. ou B.F. DIODE-PENTODE mit veränderlicher Steilheit zur Ver wendung als HF-, ZF- oder NF-Verstärker
|
OCR Scan
|
PDF
|
EAF42
7R02634
110kil
EAF42
ech41
philips EAF 42
ECH 42
philips diagram fr 310
Philips schema
philips fr 310
RG211
ECH42
390SV
|
diode wg 599
Abstract: WR-22 8 GHz waveguide circulator 710232 WR22 RF CIRCULATOR
Text: SPST and SPDT PIN Diode Switches 18-110 GHz 7 WG 231/232 Series SMA FEMALE Features • ■ ■ ■ ■ Low Loss High Isolation Fast Switching Compact Package Optional Integral Driver T i B Description This series of SPST and SPDT PIN diode switches is available in seven
|
OCR Scan
|
PDF
|
WR-42
WR-28
WR-22
WR-19
WR-15
WR-12
WR-10
diode wg 599
8 GHz waveguide circulator
710232
WR22
RF CIRCULATOR
|
